ON NTD4909N Power mosfet 30 v, 41 a, single n−channel, dpak/ipak Datasheet

NTD4909N
Power MOSFET
30 V, 41 A, Single N−Channel, DPAK/IPAK
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb−Free Devices
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V(BR)DSS
Applications
• CPU Power Delivery
• DC−DC Converters
RDS(on) MAX
8.0 mW @ 10 V
30 V
Symbol
D
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
"20
V
ID
12.1
A
TA = 100°C
S
8.6
Power Dissipation
(RqJA) (Note 1)
TA = 25°C
PD
2.6
W
Continuous Drain
Current (RqJA)
(Note 2)
TA = 25°C
ID
8.8
A
Power Dissipation
(RqJA) (Note 2)
Steady
State
Continuous Drain
Current (RqJC)
(Note 1)
TA = 25°C
TC = 25°C
6.2
PD
ID
TC = 100°C
Power Dissipation
(RqJC) (Note 1)
Pulsed Drain Current
TA = 100°C
tp=10ms
Current Limited by Package
1.37
W
A
41
29
TC = 25°C
PD
29.4
W
TA = 25°C
IDM
167
A
TA = 25°C
IDmaxPkg
60
A
TJ, Tstg
−55 to
175
°C
IS
27
A
dV/dt
7.0
V/ns
EAS
28
mJ
TL
260
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
L = 0.1 mH, IL(pk) = 24 A, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
4
4
4
1 2
1
3
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
2 3
1
2
3
CASE 369AD
CASE 369D
IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
YWW
49
09NG
TA = 25°C
N−Channel
G
YWW
49
09NG
Continuous Drain
Current (RqJA)
(Note 1)
41 A
12 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
ID MAX
4
Drain
YWW
49
09NG
•
•
•
•
2
1 2 3
1 Drain 3
Gate Source Gate Drain Source 1 2 3
Gate Drain Source
Y
WW
4909N
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
June, 2009 − Rev. 1
1
Publication Order Number:
NTD4909N/D
NTD4909N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Case (Drain)
Parameter
RqJC
5.1
°C/W
Junction−to−TAB (Drain)
RqJC−TAB
4.3
Junction−to−Ambient − Steady State (Note 3)
RqJA
58.2
Junction−to−Ambient − Steady State (Note 4)
RqJA
110
3. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
15
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = "20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
"100
nA
2.2
V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)/TJ
RDS(on)
gFS
1.7
4.0
VGS = 10 V
VGS = 4.5 V
Forward Transconductance
1.0
ID = 30 A
6.5
ID = 15 A
6.5
ID = 30 A
9.5
ID = 15 A
9.5
VDS = 1.5 V, ID = 30 A
mV/°C
8.0
mW
12
52
S
1314
pF
CHARGES AND CAPACITANCES
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
Total Gate Charge
VGS = 0 V, f = 1.0 MHz,
VDS = 15 V
17.4
7.6
nC
VGS = 4.5 V, VDS = 15 V,
ID = 30 A
2.1
VGS = 10 V, VDS = 15 V,
ID = 30 A
17.5
nC
11
ns
QGD
QG(TOT)
487
4.3
1.3
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
21
17
tf
2.7
td(on)
8.0
tr
td(off)
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
19
21
2.3
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
ns
NTD4909N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
TJ = 25°C
0.9
1.1
V
TJ = 125°C
0.8
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Time
VGS = 0 V,
IS = 30 A
ns
30
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 30 A
16
14
QRR
20
nC
Source Inductance (Note 7)
LS
2.99
nH
Drain Inductance, DPAK
LD
0.0164
Drain Inductance, IPAK (Note 7)
LD
Gate Inductance (Note 7)
LG
4.9
Gate Resistance
RG
1.0
PACKAGE PARASITIC VALUES
TA = 25°C
1.88
2.0
W
7. Assume terminal length of 110 mils.
ORDERING INFORMATION
Package
Shipping†
NTD4909NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
NTD4909N−1G
IPAK
(Pb−Free)
75 Units / Rail
NTD4909N−35G
IPAK Trimmed Lead
(Pb−Free)
75 Units / Rail
Order Number
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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3
NTD4909N
TYPICAL CHARACTERISTICS
90
80
TJ = 25°C
VDS = 10 V
60
3.6 V
50
3.4 V
40
3.2 V
30
3.0 V
20
2.8 V
10
2.6 V
2.4 V
0
1
2
ID, DRAIN CURRENT (A)
3.8 V
3
4
TJ = 25°C
20
0.014
0.012
0.010
0.008
0.006
4.0
5.0
6.0
7.0
8.0
9.0
VGS (V)
2.5
3.0
3.5
4.0
10
4.5
0.014
0.013
TJ = 25°C
0.012
0.011
VGS = 4.5 V
0.010
0.009
0.008
VGS = 10 V
0.007
0.006
0.005
0.004
15
25
35
45
55
65
75
85
95
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10,000
VGS = 0 V
ID = 30 A
VGS = 10 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
2.0
Figure 2. Transfer Characteristics
0.016
1.8
TJ = −55°C
Figure 1. On−Region Characteristics
0.018
2.0
TJ = 125°C
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID = 30 A
TJ = 25°C
3.0
40
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.020
0.004
60
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
4.2 V VGS = 4.0 V
70
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
7 V 4.5 V
10 V
80
TJ = 150°C
1000
1.6
1.4
1.2
1.0
TJ = 125°C
100
TJ = 85°C
0.8
0.6
−50 −25
0
25
50
75
100
125
150
175
10
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
30
NTD4909N
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
2000
C, CAPACITANCE (pF)
VGS = 0 V
TJ = 25°C
1500
Ciss
1000
Coss
500
0
Crss
0
5
10
15
20
25
30
15.0
13.5
Qgs
4.5
VDD = 15 V
VGS = 10 V
ID = 30 A
3.0
1.5
0
0
2
4
6
8
10
12
14
16
18
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
20
30
IS, SOURCE CURRENT (A)
t, TIME (ns)
Qgd
6.0
Figure 7. Capacitance Variation
td(off)
tf
tr
10
td(on)
1
10
VGS = 0 V
25
20
15
TJ = 125°C
10
5
0
100
TJ = 25°C
0
0.2
0.4
0.6
0.8
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
1000
ID, DRAIN CURRENT (A)
7.5
Qg, TOTAL GATE CHARGE (nC)
100
100
10 ms
10
0.1
9.0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VDD = 15 V
ID = 15 A
VGS = 10 V
1
QT
10.5
1000
1
TJ = 25°C
12.0
100 ms
1 ms
VGS = 10 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
0.1
10 ms
dc
1
10
100
30
ID = 24 A
25
20
15
10
5
0
25
50
75
100
125
150
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
175
NTD4909N
TYPICAL CHARACTERISTICS
100
R(t) (°C/W)
10
1
Duty Cycle = 50%
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
Psi Tab−A
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
PULSE TIME (sec)
Figure 13. FET Thermal Response
60
50
40
GFS (S)
0.001
30
20
10
0
0
5
10
15
20
25
30
35
ID (A)
Figure 14. GFS vs. ID
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6
40
45
50
100
1000
NTD4909N
PACKAGE DIMENSIONS
DPAK
CASE 369AA−01
ISSUE A
−T−
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
E
R
4
A
S
1
2
3
DIM
A
B
C
D
E
F
H
J
L
R
S
U
V
Z
Z
H
U
F
J
L
D 2 PL
0.13 (0.005)
M
T
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.101
5.80
0.228
3.0
0.118
1.6
0.063
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.025 0.035
0.018 0.024
0.030 0.045
0.386 0.410
0.018 0.023
0.090 BSC
0.180 0.215
0.024 0.040
0.020
−−−
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.63
0.89
0.46
0.61
0.77
1.14
9.80 10.40
0.46
0.58
2.29 BSC
4.57
5.45
0.60
1.01
0.51
−−−
0.89
1.27
3.93
−−−
NTD4909N
PACKAGE DIMENSIONS
3.5 MM IPAK, STRAIGHT LEAD
CASE 369AD−01
ISSUE O
A
E
E3
L2
E2
A1
D2
D
L1
NOTES:
1.. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2.. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30mm FROM TERMINAL TIP.
4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD GATE OR MOLD FLASH.
DIM
A
A1
A2
b
b1
D
D2
E
E2
E3
e
L
L1
L2
L
T
SEATING
PLANE
A1
b1
2X
e
A2
3X
b
0.13
M
E2
T
D2
MILLIMETERS
MIN
MAX
2.19
2.38
0.46
0.60
0.87
1.10
0.69
0.89
0.77
1.10
5.97
6.22
4.80
−−−
6.35
6.73
4.70
−−−
4.45
5.46
2.28 BSC
3.40
3.60
−−−
2.10
0.89
1.27
OPTIONAL
CONSTRUCTION
IPAK (STRAIGHT LEAD DPAK)
CASE 369D−01
ISSUE B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
B
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
D
G
H
M
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
3 PL
0.13 (0.005)
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
T
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NTD4909N/D