NTE NTE242 Silicon complementary transistors audio power amplifier, switch Datasheet

NTE241 (NPN) & NTE242 (PNP)
Silicon Complementary Transistors
Audio Power Amplifier, Switch
Description:
The NTE241 (NPN) and NTE242 (PNP) are silicon complementary transistors in a TO220 type package
designed for use in power amplifier and switching circuits.
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RΘJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
80
–
–
V
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(sus) IC = 100mA, IB = 0, Note 1
ICEO
VCE = 80V, IB = 0
–
–
1.0
mA
ICEX
VCE = 80V, VEB(off) = 1.5V
–
–
0.1
mA
VCE = 80V, VEB(off) = 1.5V, TC = +125°C
–
–
2.0
mA
ICBO
VCB = 80V, IE = 0
–
–
0.1
mA
IEBO
VBE = 5V, IC = 0
–
–
1.0
mA
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
IC = 1.5A, VCE = 2V
20
–
80
IC = 4.0A, VCE = 2V
7
–
–
IC = 1.5A, IB = 150mA
–
–
0.6
V
IC = 4.0A, IB = 1A
–
–
1.4
V
IC = 1.5A, VCE = 2V
–
–
1.2
V
ON Characteristics (Note 1)
DC Current Gain
hFE
Collector–Emitter Saturation Voltage
Base–Emitter ON Voltage
VCE(sat)
VBE(on)
Dynamic Characteristics
Small–Signal Current Gain
hfe
IC = 100mA, VCE = 2V, f = 1kHz
25
–
–
Current–Gain Bandwidth Product
fT
IC = 1A, VCE = 4V, f = 1MHz
2.5
–
–
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Base
.100 (2.54)
Emitter
Collector/Tab
MHz
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