NTE NTE2431 Silicon pnp transistor high voltage amp/switch (compl to nte2430) Datasheet

NTE2431
Silicon PNP Transistor
High Voltage Amp/Switch
(Compl to NTE2430)
Description:
The NTE2431 is a silicon PNP transistor in a SOT–89 type surface mount package designed for use
in amplifier and switching switching applications.
Absolute Maximum Ratings:
Collector–Base Voltage (Open Emitter), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V
Collector–Emitter Voltage (Open Base), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Emitter–Base Voltage (Open Collector), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Power Dissipation (TA ≤ +25°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 125K/W
Thermal Resistance, Junction–to–Tab, RthJTAB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10K/W
Note 1. Device mounted on a ceramic substrate; area = 2.5cm2, thickness = 0.7mm.
Electrical Characteristics: (TJ = +25°C unles otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
Test Conditions
Min
Typ
Max
Unit
ICBO
VCB = 280V, IE = 0
–
–
1
µA
ICEO
VCE = 250V, IB = 0
–
–
50
µA
IEBO
VEB = 6V, IC = 0
–
–
20
µA
300
–
–
V
V
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 50mA, IB = 0, L = 25mH
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 50mA, IB = 5mA
–
–
2
DC Current Gain
hFE
VCE = 10V, IC = 50mA
30
–
120
Collector Capacitance
Cc
IE = Ie = 0, VCB = 10, f = 1MHz
–
–
15
pF
Transitional Frequency
fT
VCE = 10V, IC = 10mA, f = 30MHz
15
–
–
MHz
.174 (4.42)
.059 (1.5)
.067 (1.7)
.096
(2.46)
.161
(4.1)
E
.015 (0.32)
C
.020 (.508)
.059 (1.5)
.118 (3.0)
Bottom View
B
.041
(1.05)
Min
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