NTE300 (NPN) & NTE307 (PNP) Silicon Complementary Transistors Audio Power Amplifier Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector–Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 50 – – V Collector–Emitter Breakdown Voltage V(BR)EBO IC = 10mA, RBE = ∞ 40 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 5 – – V Collector Cutoff Current ICBO VCB = 25V, IE = 0 – – 1 µA Emitter Cutoff Current IEBO VEB = 5V, IC = 0 – – 1 µA DC Current Gain hFE VCE = 4V, IC = 500mA 55 – 300 IC = 1A, IB = 50mA – – 1 V VCE = 4V, IC = 50mA – 0.7 – V Collector–Emitter Saturation Voltage Base–Emitter Voltage VCE(sat) VBE .380 (9.56) .180 (4.57) .132 (3.35) Dia C .500 (12.7) .325 (9.52) 1.200 (30.48) Ref .070 (1.78) x 45° Chamf .300 (7.62) .050 (1.27) .400 (10.16) Min E .100 (2.54) B C .100 (2.54)