NTE54 (NPN) & NTE55 (PNP) Silicon Complementary Transistors High Frequency Driver for Audio Amplifier Description: The NTE54 (NPN) and NTE55 (PNP) are silicon complementary transistors in a TO220 type case designed for use as a high frequency driver in audio amplifier applications. Features: D DC Current Gain Specified to 4A: hFE = 40 Min @ IC = 3A = 20 MIn @ IC = 4A D Collector–Emitter Sustaining Voltage: VCEO(sus) = 150V Min D High Current Gain–Bandwidth Product: fT = 30MHz Min @ IC = 500mA Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V Emitter–Base Voltage, VEB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.04W/°C Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.016W/°C Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +2.5°C/W Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +62.5°C/W Note 1. Matched complementary pairs are available upon request (NTE55MCP). Matched complementary pairs have their gain specification (hFE) matched to within 10% of each other. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCE(sus) IC = 10mA, IB = 0, Note 2 150 – – V OFF Characteristics Collector–Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current ICEO VCE = 150V, IB = 0 – – 0.1 mA ICBO VCE = 150V, IE = 0 – – 10 µA IEBO VCE = 150V, IC = 0 – – 10 µA hFE VCE = 2V, IC = 0.1A 40 – – VCE = 2V, IC = 2A 40 – – VCE = 2V, IC = 0.1A 40 – – VCE = 2V, IC = 0.1A 20 – – VCE from 2V to 20V, IC from 0.1A to 3A – 2 – NPN to PNP – 3 – ON Characteristics (Note 2) DC Current Gain DC Current Gain Linearity hFE Collector–Emitter Saturation Voltage VCE(sat) IC = 1A, IB = 0.1A – – 0.5 V Base–Emitter ON Voltage VBE(on) VCE = 2V, IC = 1A – – 1 V VCE = 10V, IC = 500mA, ftest = 10MHz, Note 3 30 – – MHz Dynamic Characteristics Current Gain–Bandwidth Product ft Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. Note 3. fT = |hfe| ftest .420 (10.67) Max .110 (2.79) .500 (12.7) Max .147 (3.75) Dia Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base .100 (2.54) Emitter Collector/Tab