ON NTK3134N Power mosfet 20 v, 890 ma, single n−channel with esd protection, sot−723 Datasheet

NTK3134N
Power MOSFET
20 V, 890 mA, Single N−Channel with
ESD Protection, SOT−723
Features
•
•
•
•
•
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N channel Switch with Low RDS(on)
44% Smaller Footprint and 38% Thinner than SC89
Low Threshold Levels Allowing 1.5 V RDS(on) Rating
Operated at Low Logic Level Gate Drive
These are Pb−Free Devices
V(BR)DSS
20 V
Applications
•
•
•
•
Load/Power Switching
Interface Switching
Logic Level Shift
Battery Management for Ultra Small Portable Electronics
RDS(on) TYP
ID Max
0.20 W @ 4.5 V
890 mA
0.26 W @ 2.5 V
790 mA
0.42 W @ 1.8 V
700 mA
0.62 W @ 1.5 V
200 mA
SOT−723 (3−LEAD)
3
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
20
V
Gate−to−Source Voltage
VGS
±6
V
ID
890
mA
Parameter
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
TA = 85°C
640
t≤5s
TA = 25°C
990
Steady
State
TA = 25°C
PD
t≤5s
Continuous Drain
Current (Note 2)
Steady
State
Power Dissipation
(Note 2)
Pulsed Drain
Current
1
2
Top View
1 − Gate
2 − Source
3 − Drain
mW
450
550
TA = 25°C
ID
TA = 85°C
TA = 25°C
tp = 10 ms
Operating Junction and Storage
Temperature
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
MARKING DIAGRAM
mA
750
540
KF M
PD
310
mW
IDM
1.8
A
TJ, TSTG
−55 to
150
°C
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces)
2. Surface mounted on FR4 board using the minimum recommended pad size
SOT−723
CASE 631AA
STYLE 5
1
KF
M
= Specific Device Code
= Date Code
ORDERING INFORMATION
Device
Package
Shipping †
NTK3134NT1G
SOT−723*
4000 / Tape & Reel
NTK3134NT5G
SOT−723*
8000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*These packages are inherently Pb−Free.
© Semiconductor Components Industries, LLC, 2006
December, 2006 − Rev. 0
1
Publication Order Number:
NTK3134N/D
NTK3134N
THERMAL RESISTANCE RATINGS
Symbol
Max
Unit
Junction−to−Ambient – Steady State (Note 3)
Parameter
RqJA
280
°C/W
Junction−to−Ambient – t = 5 s (Note 3)
RqJA
228
Junction−to−Ambient – Steady State Minimum Pad (Note 4)
RqJA
400
3. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
4. Surface mounted on FR4 board using the minimum recommended pad size
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
V(BR)DSS
VGS = 0 V, ID = 250 mA
20
Drain−to−Source Breakdown
Voltage Temperature Coefficient
V(BR)DSS/TJ
ID = 250 mA, Reference to 25°C
Zero Gate Voltage Drain Current
IDSS
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown
Voltage
Gate−to−Source Leakage Current
VGS = 0 V,
VDS = 16 V
V
18
mV/°C
TJ = 25°C
1.0
TJ = 125°C
2.0
IGSS
VDS = 0 V, VGS = ±4.5 V
VGS(TH)
VGS = VDS, ID = 250 mA
±0.5
mA
mA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
0.45
1.2
2.4
gFS
V
mV/°C
VGS = 4.5 V, ID = 890 mA
0.20
0.35
VGS = 2.5 V, ID = 780 mA
0.26
0.45
VGS = 1.8 V, ID = 700 mA
0.43
0.65
VGS = 1.5 V, ID = 200 mA
0.56
1.2
VDS = 10 V, ID = 800 mA
1.6
VGS = 0 V, f = 1 MHz, VDS = 16 V
79
120
W
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
13
20
Reverse Transfer Capacitance
CRSS
9.0
15
pF
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
Turn On Delay Time
Rise Time
TurnOff Delay Time
Fall Time
td(ON)
tr
VGS = 4.5 V, VDS = 10 V, ID = 500 mA,
RG = 10 W
ns
6.7
4.8
td(OFF)
17.3
tf
7.4
DRAIN SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
VGS = 0 V, IS = 350 mA
TJ = 25°C
VGS = 0 V, dISD/dt = 100 A/ms,
IS = 1.0 A, VDD = 20 V
0.75
8.1
Charge Time
ta
Discharge Time
tb
1.7
QRR
3.0
Reverse Recovery Charge
5. Pulse Test: pulse width = 300 ms, duty cycle = 2%
6. Switching characteristics are independent of operating junction temperatures
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2
1.2
V
ns
6.4
nC
NTK3134N
TYPICAL CHARACTERISTICS
2.0
2.0
VDS ≥ 5 V
VGS = 4.5 V to 2.2 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
2.0 V
1.5
1.8 V
TJ = 25°C
1.0
1.6 V
1.5 V
0.5
1.5
1.0
TJ = 25°C
0.5
TJ = 125°C
1.4 V
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
0.75
1.25
1.5
1.75
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VGS, GATE−TO−SOURCE VOLTAGE (V)
1.50
ID = 0.89 A
TJ = 25°C
1.25
1.00
0.75
0.50
0.25
0
1
1.0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
2.0
0.30
TJ = 25°C
0.28
0.25
VGS = 2.5 V
0.23
0.20
VGS = 4.5 V
0.18
0.15
0.3
0.6
0.8
1.1
1.3
1.6
1.8
VGS, GATE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10,000
0.6
VGS = 0 V
VGS = 1.5 V, ID = 200 mA
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
TJ = −55°C
0
0.5
0.4
VGS = 2.5 V, ID = 710 mA
0.3
TJ = 150°C
1000
VGS = 1.8 V, ID = 710 mA
TJ = 125°C
100
0.2
0.1
−60 −35
VGS = 4.5 V, ID = 1 A
−10
15
40
65
10
90
115
140
5.0
10
15
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
20
NTK3134N
TYPICAL CHARACTERISTICS
140
100
120
100
t, TIME (ns)
Ciss
80
60
td(off)
10
tf
td(on)
tr
40
Coss
20
Crss
0
1
0
2
4
6
8
10
12
14
16
18
20
1
10
100
DRAIN−TO−SOURCE VOLTAGE (V)
RG, GATE RESISTANCE (W)
Figure 7. Capacitance Variation
Figure 8. Resistive Switching Time Variation
vs. Gate Resistance
1.0
150°C
VGS = 0 V
0.9
IS, SOURCE CURRENT (A)
C, CAPACITANCE (pF)
VDD = 10 V
ID = 500 mA
VGS = 4.5 V
VGS = 0 V
TJ = 25°C
125°C
0.8
25°C
0.7
0.6
0.5
0.4
0.3
TJ = −55°C
0.2
0.1
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
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4
1.0
NTK3134N
PACKAGE DIMENSIONS
SOT−723
CASE 631AA−01
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
−X−
D
A
b1
−Y−
3
E
1
e
HE
L
2
b 2X
0.08 (0.0032) X Y
DIM
A
b
b1
C
D
E
e
HE
L
C
MILLIMETERS
MIN
NOM
MAX
0.45
0.50
0.55
0.15
0.21
0.27
0.25
0.31
0.37
0.07
0.12
0.17
1.15
1.20
1.25
0.75
0.80
0.85
0.40 BSC
1.15
1.20
1.25
0.15
0.20
0.25
INCHES
MIN
NOM
MAX
0.018 0.020 0.022
0.0059 0.0083 0.0106
0.010 0.012 0.015
0.0028 0.0047 0.0067
0.045 0.047 0.049
0.03 0.032 0.034
0.016 BSC
0.045 0.047 0.049
0.0059 0.0079 0.0098
STYLE 5:
PIN 1. GATE
2. SOURCE
3. DRAIN
SOLDERING FOOTPRINT*
0.40
0.0157
0.40
0.0157
1.0
0.039
0.40
0.0157
0.40
0.0157
0.40
0.0157
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTK3134N/D
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