ON NTMFS4847NT1G Power mosfet 30v 85a single n-channel, so-8fl Datasheet

NTMFS4847N
Power MOSFET
30 V, 85 A, Single N−Channel, SO−8FL
Features
•
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Thermally Enhanced SO−8 Package
These are Pb−Free Devices
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V(BR)DSS
Applications
•
•
•
•
Refer to Application Note AND8195/D
CPU Power Delivery
DC−DC Converters
Low Side Switching
RDS(ON) MAX
4.1 mW @ 10 V
30 V
Symbol
D (5,6)
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±16
V
ID
18
A
Continuous Drain
Current RqJA
(Note 1)
TA = 25°C
Power Dissipation
RqJA (Note 1)
TA = 25°C
PD
2.21
W
Continuous Drain
Current RqJA v
10 sec
TA = 25°C
ID
29.5
A
Power Dissipation
RqJA, t v 10 sec
TA = 25°C
PD
5.8
W
TA = 25°C
ID
11.5
A
Continuous Drain
Current RqJA
(Note 2)
TA = 85°C
Steady
State
S (1,2,3)
TA = 85°C
8.2
TA = 25°C
PD
0.88
W
Continuous Drain
Current RqJC
(Note 1)
TC = 25°C
ID
85
A
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
48.1
W
TA = 25°C
IDM
170
A
TA = 25°C
IDmaxpkg
100
A
TJ,
TSTG
−55 to
+150
°C
IS
48
A
TC = 85°C
tp=10ms
Current limited by package
N−CHANNEL MOSFET
MARKING
DIAGRAM
21
Power Dissipation
RqJA (Note 2)
Pulsed Drain
Current
G (4)
13
TA = 85°C
85 A
6.2 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
ID MAX
61
D
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
A
Y
W
ZZ
S
S
S
G
4847N
AYWZZ
D
D
D
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
dV/dt
6
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 V, VGS = 10 V,
IL = 33 Apk, L = 0.3 mH, RG = 25 W)
EAS
163
mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
Device
Package
Shipping†
NTMFS4847NT1G
SO−8FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4847NT3G
SO−8FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 3
1
Publication Order Number:
NTMFS4847N/D
NTMFS4847N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction−to−Case (Drain)
Parameter
RqJC
2.6
Junction−to−Ambient – Steady State (Note 1)
RqJA
56.6
Junction−to−Ambient – Steady State (Note 2)
RqJA
142
Junction−to−Ambient − t v 10 sec
RqJA
21.6
Unit
°C/W
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
25
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25 °C
1
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±16 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.5
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
VGS(TH)/TJ
RDS(on)
1.45
1.8
5.2
VGS = 10 V to
11.5 V
ID = 30 A
3.2
ID = 15 A
3.2
VGS = 4.5 V
ID = 30 A
5.0
ID = 15 A
5.0
gFS
VDS = 1.5 V, ID = 30 A
mV/°C
4.1
6.2
74
mW
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
2614
VGS = 0 V, f = 1 MHz, VDS = 12 V
466
CRSS
241
Total Gate Charge
QG(TOT)
19.2
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
VGS = 4.5 V, VDS = 15 V; ID = 30 A
1.6
7.3
pF
28
nC
6.1
QG(TOT)
VGS = 11.5 V, VDS = 15 V,
ID = 30 A
43.8
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
17.7
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V, ID = 15 A,
RG = 3.0 W
tf
53
21
8.7
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
ns
NTMFS4847N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 4)
td(ON)
Turn−On Delay Time
Rise Time
10.5
tr
Turn−Off Delay Time
td(OFF)
Fall Time
20.8
VGS = 11.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
ns
28.1
tf
6.5
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
VGS = 0 V,
IS = 30 A
TJ = 25°C
0.8
TJ = 125°C
0.7
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
1.0
V
15.4
8.2
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
ns
7.2
QRR
6.0
nC
Source Inductance
LS
0.93
nH
Drain Inductance
LD
Gate Inductance
LG
Gate Resistance
RG
PACKAGE PARASITIC VALUES
0.005
TA = 25°C
1.84
0.9
W
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
TYPICAL CHARACTERISTICS
ID, DRAIN CURRENT (A)
10V
120
110
TJ = 25°C
5.0 V
90
4.5 V
80
4.2 V
3.8 V
3.6 V
70
4.0 V
60
3.4 V
50
40
3.2 V
30
20
3.0 V
10
0
ID, DRAIN CURRENT (A)
110
100
2.8 V
0
1
2
3
4
5
6
VDS ≥ 10 V
100
90
80
70
60
50
40
30
20
10
0
TJ = 125°C
TJ = 25°C
0
1
TJ = −55°C
2
3
4
5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
TYPICAL CHARACTERISTICS
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3
6
0.040
ID = 30 A
TJ = 25°C
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0
2
3
4
6
5
7
8
9
10
11
VGS, GATE−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
NTMFS4847N
0.008
TJ = 25°C
0.007
0.006
VGS = 4.5 V
0.005
0.004
VGS = 11.5 V
0.003
0.002
30
10,000
1.4
1.2
−25
0
25
50
75
100
125
100
150
5
10
TJ, JUNCTION TEMPERATURE (°C)
TJ = 25°C
2400
2000
1600
Coss
Crss
400
0
0
4
8
12
16
20
24
25
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
VGS, GATE−TO−SOURCE VOLTAGE (V)
Ciss
20
15
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
800
110 120
TJ = 125°C
0.6
−50
1200
100
TJ = 150°C
0.8
2800
90
80
1000
1.0
3200
70
VGS = 0 V
ID = 30 A
VGS = 10 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
60
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.8
C, CAPACITANCE (pF)
50
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.6
40
28
32
12
11
10
QT
VGS
9
8
7
6
5
4
Qgs
Qgd
3
2
1
0
ID = 30 A
TJ = 25°C
0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
4
8
12
16
20
24
28
32
36
40
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
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4
44
NTMFS4847N
TYPICAL CHARACTERISTICS
30
VDS = 15 V
ID = 15 A
VGS = 11.5 V
tf
td(off)
100
t, TIME (ns)
IS, SOURCE CURRENT (A)
1000
tr
td(on)
10
1
1
10
5
0.4
0.5
0.6
0.7
0.8
0.9
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
ID, DRAIN CURRENT (A)
10
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
10 ms
100
100 ms
10
0.1
15
RG, GATE RESISTANCE (W)
1000
1 ms
VGS = 20 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
1
20
0
100
VGS = 0 V
TJ = 25°C
25
0.1
10 ms
dc
1
10
100
180
ID = 33 A
160
140
120
100
80
60
40
20
0
25
50
75
100
125
150
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE(°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
100
140
120
80
Id (A)
gFS (S)
100
60
100°C
125°C
25°C
10
40
20
0
VDS = 1.5 V
0
15
30
45
60
75
90
105
1
120
1
10
100
1000
DRAIN CURRENT (A)
PULSE WIDTH (ms)
Figure 13. gFS vs. Drain Current
Figure 14. Id vs. Pulse Width
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5
10,000
NTMFS4847N
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE G
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
2
A
B
D1
2X
0.20 C
4X
E1
2
3
q
E
2
1
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
c
A1
4
TOP VIEW
C
3X
e
0.10 C
SEATING
PLANE
DETAIL A
A
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
0.10 C
SIDE VIEW
SOLDERING FOOTPRINT*
DETAIL A
3X
8X
0.10
C A B
0.05
c
4X
e/2
1
4
0.965
K
G
0.750
1.000
L
PIN 5
(EXPOSED PAD)
4X
1.270
b
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15 BSC
4.50
4.90
5.10
3.50
−−−
4.22
6.15 BSC
5.50
5.80
6.10
3.45
−−−
4.30
1.27 BSC
0.51
0.61
0.71
1.20
1.35
1.50
0.51
0.61
0.71
0.05
0.17
0.20
3.00
3.40
3.80
0_
−−−
12 _
1.330
2X
0.905
2X
E2
L1
M
0.495
4.530
3.200
0.475
D2
2X
BOTTOM VIEW
1.530
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTMFS4847N/D