ON NTMFS4851NT1G Power mosfet 30 v, 66 a, single n−channel, so−8fl Datasheet

NTMFS4851N
Power MOSFET
30 V, 66 A, Single N−Channel, SO−8FL
Features
•
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Thermally Enhanced SO8 Package
These are Pb−Free Devices*
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V(BR)DSS
Applications
•
•
•
•
Refer to Application Note AND8195/D
CPU Power Delivery
DC−DC Converters
High Side Switching
RDS(ON) MAX
5.9 mW @ 10 V
30 V
Symbol
D (5,6)
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±16
V
ID
15
A
Continuous Drain
Current RqJA
(Note 1)
TA = 25°C
Power Dissipation
RqJA (Note 1)
TA = 25°C
PD
2.16
W
Continuous Drain
Current RqJA v
10 sec
TA = 25°C
ID
24.3
A
Power Dissipation
RqJA, t v 10 sec
TA = 25°C
PD
5.67
W
TA = 25°C
ID
9.5
A
Continuous Drain
Current RqJA
(Note 2)
TA = 85°C
Steady
State
S (1,2,3)
TA = 85°C
6.9
TA = 25°C
PD
0.87
W
Continuous Drain
Current RqJC
(Note 1)
TC = 25°C
ID
66
A
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
41.7
W
TA = 25°C
IDM
132
A
TA = 25°C
IDmaxpkg
100
A
TJ,
TSTG
−55 to
+150
°C
IS
41.7
A
TC = 85°C
tp=10ms
Current limited by package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
47.8
Drain to Source dV/dt
dV/dt
6
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 V, VGS = 10 V,
IL = 27 Apk, L = 0.3 mH, RG = 25 W)
EAS
109
mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2010
May, 2010 − Rev. 2
N−CHANNEL MOSFET
MARKING
DIAGRAM
17.5
Power Dissipation
RqJA (Note 2)
Pulsed Drain
Current
G (4)
10.8
TA = 85°C
66 A
8.7 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
ID MAX
1
D
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
S
S
S
G
4851N
AYWWG
G
D
D
D
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTMFS4851NT1G
SO−8FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4851NT3G
SO−8FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy
and soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Publication Order Number:
NTMFS4851N/D
NTMFS4851N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction−to−Case (Drain)
Parameter
RqJC
3.0
Junction−to−Ambient – Steady State (Note 1)
RqJA
57.8
Junction−to−Ambient – Steady State (Note 2)
RqJA
143.5
Junction−to−Ambient − t v 10 sec
RqJA
22.1
Unit
°C/W
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
25
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25 °C
1
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±16 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.5
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
VGS(TH)/TJ
RDS(on)
1.45
1.8
4.6
VGS = 10 V to
11.5 V
ID = 30 A
4.3
ID = 15 A
4.2
VGS = 4.5 V
ID = 30 A
6.6
ID = 15 A
6.5
gFS
VDS = 1.5 V, ID = 30 A
mV/°C
5.9
8.7
62
mW
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
170
Total Gate Charge
QG(TOT)
13.5
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
1850
VGS = 0 V, f = 1 MHz, VDS = 12 V
VGS = 4.5 V, VDS = 15 V; ID = 30 A
333
1.7
5.1
pF
20
nC
4.5
QG(TOT)
VGS = 11.5 V, VDS = 15 V,
ID = 30 A
32
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
14.4
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V, ID = 15 A,
RG = 3.0 W
tf
39.8
18.6
5.2
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
ns
NTMFS4851N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
td(ON)
Rise Time
9.5
tr
Turn−Off Delay Time
td(OFF)
Fall Time
22
VGS = 11.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
ns
25
tf
4.6
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
VGS = 0 V,
IS = 30 A
TJ = 25°C
0.84
TJ = 125°C
0.73
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
1.0
V
13.2
8.5
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
ns
4.7
QRR
3.5
nC
Source Inductance
LS
0.93
nH
Drain Inductance
LD
Gate Inductance
LG
Gate Resistance
RG
PACKAGE PARASITIC VALUES
0.005
TA = 25°C
1.84
0.9
W
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
130
10 V
120
110
100
90
80
70
60
50
40
30
20
10
0
0
VGS = 4.2 V
TJ = 25°C
4.0 V
5.0 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
TYPICAL CHARACTERISTICS
3.8 V
4.5 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
2.6 V
1
2
3
4
5
6
120
110
100
90
80
70
VDS ≥ 10 V
60
50
40
30
20
10
0
TJ = 125°C
TJ = 25°C
TJ = −55°C
0
1
2
3
4
5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
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3
6
NTMFS4851N
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
TYPICAL CHARACTERISTICS
0.020
0.018
ID = 30 A
TJ = 25°C
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0
2
3
4
5
6
7
8
9
10
11
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.010
0.009
0.008
VGS = 4.5 V
0.007
0.006
0.005
VGS = 11.5 V
0.004
0.003
0.002
0.001
0
15
20
30
35
45
40
50
55
60
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.70
10,000
VGS = 0 V
ID = 30 A
VGS = 10 V
1.55
IDSS, LEAKAGE (nA)
1.40
TJ = 150°C
1000
1.25
1.10
0.95
0.80
TJ = 125°C
100
0.65
0.50
−50
−25
0
25
50
75
100
125
10
150
2
4
TJ, JUNCTION TEMPERATURE (°C)
Ciss
1750
1500
TJ = 25°C
1000
Coss
750
500
Crss
250
0
0
5
10
15
20
25
VGS, GATE−TO−SOURCE VOLTAGE (V)
12
11
10
1250
10
12
14
18
16
20
16
QT
14
VDS
VGS
9
8
12
10
7
6
8
5
4
6
Qgd
Qgs
3
ID = 30 A
TJ = 25°C
2
1
0
0
5
10
15
20
25
30
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
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4
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
2250
8
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
2500
2000
6
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
C, CAPACITANCE (pF)
25
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
TJ = 25°C
4
2
0
NTMFS4851N
TYPICAL CHARACTERISTICS
1000
IS, SOURCE CURRENT (A)
VDS = 15 V
ID = 15 A
VGS = 11.5 V
t, TIME (ns)
100
td(off)
tr
10
td(on)
tf
1
ID, DRAIN CURRENT (A)
1000
10
100
0.5
0.6
0.7
0.8
0.9
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
10 ms
100 ms
10
1 ms
10 ms
dc
1
0.1
0.4
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
VGS = 20 V
Single Pulse
TC = 25°C
100
VGS = 0 V
TJ = 25°C
RG, GATE RESISTANCE (W)
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
1
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
10
100
110
100
ID = 27 A
90
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE(°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
120
100
100
125°C
100°C
25°C
Id (A)
gFS (S)
80
60
10
40
20
0
VDS = 1.5 V
0
10
20
30
40
50
60 70
80
1
90 100 110 120
0.1
1
10
100
1000
DRAIN CURRENT (A)
PULSE WIDTH (ms)
Figure 13. gFS vs. Drain Current
Figure 14. Avalanche Characteristics
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5
10,000
NTMFS4851N
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA−01
ISSUE D
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
2
A
B
D1
6
2X
0.20 C
5
4X
E1
1
2
3
q
E
2
c
A1
4
TOP VIEW
C
3X
e
0.10 C
SEATING
PLANE
DETAIL A
A
0.10 C
SIDE VIEW
8X
DETAIL A
b
0.10
C A B
0.05
c
e/2
L
1
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15 BSC
4.50
4.90
5.10
3.50
−−−
4.22
6.15 BSC
5.50
5.80
6.10
3.45
−−−
4.30
1.27 BSC
0.51
0.61
0.71
0.51
−−−
−−−
0.51
0.61
0.71
0.05
0.17
0.20
3.00
3.40
3.80
0_
−−−
12 _
SOLDERING FOOTPRINT*
3X
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
4X
1.270
0.750
4X
1.000
0.965
4
K
1.330
2X
0.905
2X
E2
L1
6
G
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
0.495
M
4.530
3.200
0.475
5
D2
2X
1.530
BOTTOM VIEW
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
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NTMFS4851N/D