ON NTMFS4955NT1G Power mosfet 30 v, 48 a, single nâ channel, soâ 8 fl Datasheet

NTMFS4955N
Power MOSFET
30 V, 48 A, Single N−Channel, SO−8 FL
Features
•
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Optimized for 5 V, 12 V Gate Drives
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
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V(BR)DSS
RDS(ON) MAX
5.6 mW @ 10 V
30 V
• CPU Power Delivery
• DC−DC Converters
ID MAX
48 A
8.5 mW @ 4.5 V
D (5,6)
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
ID
16.7
A
TA = 25°C
Continuous Drain
Current RqJA
(Note 1)
TA = 100°C
S (1,2,3)
10.5
Power Dissipation
RqJA (Note 1)
TA = 25°C
PD
2.70
W
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°C
ID
25.2
A
Power Dissipation
RqJA ≤ 10 s (Note 1)
Continuous Drain
Current RqJA
(Note 2)
TA = 100°C
Steady
State
PD
6.16
W
TA = 25°C
ID
9.7
A
6.2
TA = 25°C
PD
0.92
W
Continuous Drain
Current RqJC
(Note 1)
TC = 25°C
ID
48
A
TC =100°C
30
TC = 25°C
PD
23.2
W
TA = 25°C, tp = 10 ms
IDM
195
A
IDmax
100
A
TJ,
TSTG
−55 to
+150
°C
Current Limited by Package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
IS
21
A
Drain to Source DV/DT
dV/dt
6.0
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V,
IL = 26 Apk, L = 0.1 mH, RG = 25 W)
EAS
34
mJ
TL
260
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
MARKING
DIAGRAM
D
TA = 25°C
Power Dissipation
RqJA (Note 2)
Pulsed Drain
Current
N−CHANNEL MOSFET
15.9
TA = 100°C
Power Dissipation
RqJC (Note 1)
G (4)
°C
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
A
Y
W
ZZ
S
S
S
G
D
4955N
AYWZZ
D
D
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Device
Package
Shipping†
NTMFS4955NT1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4955NT3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2013
March, 2013 − Rev. 6
1
Publication Order Number:
NTMFS4955N/D
NTMFS4955N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction−to−Case (Drain)
Parameter
RqJC
5.4
Junction−to−Ambient – Steady State (Note 3)
RqJA
46.3
Junction−to−Ambient – Steady State (Note 4)
RqJA
136.2
Junction−to−Ambient – (t ≤ 10 s) (Note 3)
RqJA
20.3
Unit
°C/W
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
V
Drain−to−Source Breakdown Voltage
(transient)
V(BR)DSSt
VGS = 0 V, ID(aval) = 11.0 A,
Tcase = 25°C, ttransient = 100 ns
34
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
21
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.2
V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)/TJ
RDS(on)
1.7
3.9
VGS = 10 V
VGS = 4.5 V
Forward Transconductance
1.2
gFS
ID = 30 A
4.5
ID = 15 A
4.5
ID = 30 A
6.8
ID = 15 A
6.7
VDS = 1.5 V, ID = 15 A
mV/°C
5.6
8.5
52
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
1264
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Capacitance Ratio
CRSS /
CISS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
VGS = 0 V, f = 1 MHz, VDS = 15 V
483
pF
143
VGS = 0 V, VDS = 15 V, f = 1 MHz
0.11
0.22
10.8
VGS = 4.5 V, VDS = 15 V; ID = 30 A
2.0
3.8
nC
4.2
QG(TOT)
VGS = 10 V, VDS = 15 V; ID = 30 A
21.5
nC
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
9.5
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
32.7
16.4
6.2
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
ns
NTMFS4955N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
7.4
tr
td(OFF)
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
27.5
ns
20.3
4.1
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.86
TJ = 125°C
0.75
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 30 A
1.1
V
25.8
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
12.4
ns
13.4
QRR
13.6
nC
Source Inductance
LS
1.00
nH
Drain Inductance
LD
0.005
nH
Gate Inductance
LG
1.84
nH
Gate Resistance
RG
PACKAGE PARASITIC VALUES
TA = 25°C
1.0
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
2.2
W
NTMFS4955N
TYPICAL CHARACTERISTICS
4.5 V
TJ = 25°C
4.0 V
80
ID, DRAIN CURRENT (A)
100
90
3.5 V
70
60
50
40
3.0 V
30
20
10
0
VGS = 2.5 V
0
1
2
3
4
5
0.014
0.012
0.010
0.008
0.006
0.004
4
5
6
7
8
9
10
50
40
30
20
1
2
3
4
5
0.011
T = 25°C
0.010
0.009
0.008
VGS = 4.5 V
0.007
0.006
0.005
VGS = 10 V
0.004
0.003
10 20
30
40
50
60
70
80
90 100 110 120
VGS (V)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10,000
1.7
ID = 30 A
VGS = 10 V
TJ = 150°C
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
VDS = 10 V
70
60
Figure 2. Transfer Characteristics
0.016
1.5
TJ = 125°C
Figure 1. On−Region Characteristics
ID = 30 A
1.6
TJ = 25°C
90
80
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.018
3
TJ = −55°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.020
0.002
0
120
110
100
10
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
120
10 V
110
1.4
1.3
1.2
1.1
1.0
0.9
1,000
TJ = 125°C
100
TJ = 85°C
0.8
0.7
0.6
−50
−25
0
25
50
75
100
125
150
10
VGS = 0 V
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
30
NTMFS4955N
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
TJ = 25°C
VGS = 0 V
Ciss
1400
VGS, GATE−TO−SOURCE VOLTAGE (V)
1600
1200
1000
800
Coss
600
400
Crss
200
0
0
5
10
15
20
25
30
11
QT
10
9
8
7
6
5
Qgs
4
Qgd
TJ = 25°C
3
VGS = 10 V
VDD = 15 V
ID = 30 A
2
1
0
0
2
4
6
8
10
12
14
16
18
20
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
22
30
t, TIME (ns)
100
IS, SOURCE CURRENT (A)
VGS = 0 V
VGS = 10 V
VDD = 15 V
ID = 15 A
td(off)
tf
tr
10
ID, DRAIN CURRENT (A)
1000
100
1
10
10
TJ = 125°C
TJ = 25°C
5
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
0 V < VGS < 10 V
Single Pulse
TC = 25°C
10
100 ms
1 ms
1
0.01
15
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
10 ms
0.1
20
0
100
10 ms
RDS(on) Limit
Thermal Limit
Package Limit
0.01
0.1
dc
1
10
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
1
td(on)
25
100
40
ID = 26 A
36
32
28
24
20
16
12
8
4
0
25
50
75
100
125
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
150
NTMFS4955N
TYPICAL CHARACTERISTICS
100
D = 0.5
r(t)
(°C/W)
10
1
0.2
0.1
0.05
0.02
0.01
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
Figure 13. Thermal Response
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6
1
10
100
1000
NTMFS4955N
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE H
2X
0.20 C
D
2
A
B
D1
2X
0.20 C
2
2
3
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
4X
E1
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
q
E
c
A1
4
TOP VIEW
C
3X
e
0.10 C
SEATING
PLANE
DETAIL A
A
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
0.10 C
SIDE VIEW
8X
DETAIL A
SOLDERING FOOTPRINT*
b
0.10
C A B
0.05
c
3X
4X
1.270
0.750
1
4
0.965
K
1.330
PIN 5
(EXPOSED PAD)
E2
L1
M
2X
0.905
2X
0.495
4.530
3.200
G
4X
1.000
e/2
L
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15 BSC
4.70
4.90
5.10
3.80
4.00
4.20
6.15 BSC
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.61
0.71
1.20
1.35
1.50
0.51
0.61
0.71
0.05
0.17
0.20
3.00
3.40
3.80
0_
−−−
12 _
0.475
D2
BOTTOM VIEW
2X
1.530
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTMFS4955N/D