NTST30100CT, NTSB30100CT-1G, NTSJ30100CTG, NTSB30100CTG Very Low Forward Voltage Trench-based Schottky Rectifier http://onsemi.com PIN CONNECTIONS 1 Exceptionally Low VF = 0.455 V at IF = 5 A 2, 4 3 Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance High Surge Capability Pb−Free and Halide−Free Packages are Available 4 1 2 3 Typical Applications ATX and Flat Panel Display High Frequency and DC−DC Converters Freewheeling and OR−ing diodes Reverse Battery Protection Instrumentation 1 Mechanical Characteristics • Case: Epoxy, Molded • Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Maximum for 12 3 I2PAK CASE 418D STYLE 3 4 • Switching Power Supplies including Notebook / Netbook Adapters, • • • • TO−220AB CASE 221A STYLE 6 4 2 TO−220FP CASE 221AH D2PAK CASE 418B 3 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. 10 sec © Semiconductor Components Industries, LLC, 2013 January, 2013 − Rev. 5 1 Publication Order Number: NTST30100CT/D NTST30100CT, NTSB30100CT−1G, NTSJ30100CTG, NTSB30100CTG MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC = 115°C) Per device Per diode Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 110°C) Per device Per diode Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Symbol Value Unit VRRM VRWM VR 100 V IF(AV) A 30 15 IFRM A 60 30 IFSM 160 A TJ −40 to +150 °C Storage Temperature Tstg −40 to +150 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms Operating Junction Temperature Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Rating Symbol NTST30100CTG, NTSB30100CT−1G NTSB30100CTG NTSJ30100CTG Unit Maximum Thermal Resistance per Diode Junction−to−Case Junction−to−Ambient RqJC RqJA 2.5 70 1.14 46.6 4.09 105 °C/W °C/W ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted) Rating Symbol Maximum Instantaneous Forward Voltage (Note 1) (IF = 5 A, TJ = 25°C) (IF = 7.5 A, TJ = 25°C) (IF = 15 A, TJ = 25°C) vF (IF = 5 A, TJ = 125°C) (IF = 7.5 A, TJ = 125°C) (IF = 15 A, TJ = 125°C) Maximum Instantaneous Reverse Current (Note 1) (VR = 70 V, TJ = 25°C) (VR = 70 V, TJ = 125°C) IR (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) Typ Max 0.516 0.576 0.734 − − 0.85 0.455 0.522 0.627 − − 0.68 7.2 8.0 65 20 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0% http://onsemi.com 2 Unit V mA mA 500 35 mA mA NTST30100CT, NTSB30100CT−1G, NTSJ30100CTG, NTSB30100CTG 100 100 TA = 150°C TA = 25°C I R , REVERSE CURRENT (mA) i F , INSTANTANEOUS FORWARD CURRENT (AMPS) TYPICAL CHARACTERISITICS 10 TA = 125°C 1.0 0.1 TA = 150°C 10 TA = 125°C 1.0 0.1 TA = 25°C 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 20 30 CJ, JUNCTION CAPACITANCE (pF) 10000 TJ = 25°C 1000 100 10 0.1 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 25 20 15 SQUARE WAVE 10 5 0 0 20 35 30 25 SQUARE WAVE 20 15 10 5 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) IF(AV), AVERAGE FORWARD CURRENT (A) 40 60 80 100 120 TC, CASE TEMPERATURE (°C) 30 RqJC = 1.3°C/W 45 40 0 RqJC = 1.3°C/W dc 140 Figure 4. Current Derating per Leg 60 dc 100 30 Figure 3. Typical Junction Capacitance 55 50 90 Figure 2. Typical Reverse Current IF(AV), AVERAGE FORWARD CURRENT (A) Figure 1. Typical Forward Voltage 50 70 40 60 80 VR, REVERSE VOLTAGE (VOLTS) 25 IPK/IAV = 5 IPK/IAV = 20 20 SQUARE WAVE 15 10 dc 5 0 140 IPK/IAV = 10 TA = 150°C 0 2 4 6 8 10 12 14 16 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating Figure 6. Forward Power Dissipation http://onsemi.com 3 18 NTST30100CT, NTSB30100CT−1G, NTSJ30100CTG, NTSB30100CTG TYPICAL CHARACTERISITICS R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) 10 1 50% Duty Cycle 20% 10% 0.1 5% 2% 1% 0.01 0.000001 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 t, Pulse Time (sec) 1 10 100 1000 Figure 7. Typical Transient Thermal Response, Junction−to−Case for NTST30100CT and NTSB30100CT−1G R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) 10 50% Duty Cycle 1 20% 0.1 10% 5% 2% 1% 0.01 Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 100 1000 t, Pulse Time (sec) R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) Figure 8. Typical Transient Thermal Response, Junction−to−Case for NTSJ30100CTG 1 50% Duty Cycle 0.1 20% 10% 5% 2% 0.01 1% 0.000001 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 t, Pulse Time (sec) 1 10 Figure 9. Typical Transient Thermal Response, Junction−to−Case for NTSB30100CTG http://onsemi.com 4 NTST30100CT, NTSB30100CT−1G, NTSJ30100CTG, NTSB30100CTG ORDERING INFORMATION Package Shipping NTST30100CTG Device TO−220AB (Pb−Free) 50 Units / Rail NTSB30100CT−1G I2PAK (Pb−Free) 50 Units / Rail NTSJ30100CTG TO−220FP (Halide−Free) 50 Units / Rail NTSB30100CTG D2PAK (Pb−Free) 50 Units / Rail NTSB30100CTT4G D2PAK (Pb−Free) 800 / Tape & Reel MARKING DIAGRAMS AYWW TS30100Cx AKA AYWW TS30100CG AKA TO−220AB TO−220FP A Y WW AKA x G H AYWW TS30100CG AKA I2PAK = Assembly Location = Year = Work Week = Polarity Designator = G or H = Pb−Free Package = Halide−Free Package http://onsemi.com 5 AYWW TS30100CG AKA D2PAK NTST30100CT, NTSB30100CT−1G, NTSJ30100CTG, NTSB30100CTG PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AF −T− B F SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 ANODE CATHODE ANODE CATHODE I2PAK (TO−262) CASE 418D ISSUE D C E V −B− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 A W 1 2 DIM A B C D E F G H J K S V W 3 F −T− SEATING PLANE K S J G D 3 PL 0.13 (0.005) M T B H M http://onsemi.com 6 INCHES MIN MAX 0.335 0.380 0.380 0.406 0.160 0.185 0.026 0.035 0.045 0.055 0.122 REF 0.100 BSC 0.094 0.110 0.013 0.025 0.500 0.562 0.390 REF 0.045 0.070 0.522 0.551 MILLIMETERS MIN MAX 8.51 9.65 9.65 10.31 4.06 4.70 0.66 0.89 1.14 1.40 3.10 REF 2.54 BSC 2.39 2.79 0.33 0.64 12.70 14.27 9.90 REF 1.14 1.78 13.25 14.00 NTST30100CT, NTSB30100CT−1G, NTSJ30100CTG, NTSB30100CTG PACKAGE DIMENSIONS TO−220 FULLPACK, 3−LEAD CASE 221AH ISSUE B A E B P E/2 0.14 M B A M SEATING PLANE A H1 A1 4 Q D C NOTE 3 1 2 3 L L1 3X 3X b2 c b 0.25 M B A M C A2 e http://onsemi.com 7 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR UNCONTROLLED IN THIS AREA. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY. 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00. DIM A A1 A2 b b2 c D E e H1 L L1 P Q MILLIMETERS MIN MAX 4.30 4.70 2.50 2.90 2.50 2.70 0.54 0.84 1.10 1.40 0.49 0.79 14.70 15.30 9.70 10.30 2.54 BSC 6.70 7.10 12.70 14.73 --2.80 3.00 3.40 2.80 3.20 NTST30100CT, NTSB30100CT−1G, NTSJ30100CTG, NTSB30100CTG PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E V W −B− 4 1 2 A S 3 −T− SEATING PLANE K J G D W H 3 PL 0.13 (0.005) DIM A B C D E F G H J K L M N P R S V M T B VARIABLE CONFIGURATION ZONE M N R MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 P U L M INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 L M L M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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