ON NUF8600MN 8-channel emi filter with integrated esd protection Datasheet

NUF8600MN
8-Channel EMI Filter with
Integrated ESD Protection
The NUF8600MN is a eight−channel (C−R−C) Pi−style EMI filter
array with integrated ESD protection. Its typical component values of
R = 50 and C = 17 pF deliver a cutoff frequency of 115 MHz and
stop band attenuation greater than −25 dB from 800 MHz to 2.2 GHz.
This performance makes the part ideal for parallel interfaces with
data rates up to 77 Mbps in applications where wireless interference
must be minimized. The specified attenuation range is very effective
in minimizing interference from 2G/3G, GPS, Bluetooth® and
WLAN signals.
The NUF8600MN is available in the low−profile 18−lead 1.6 mm x
4.0 mm DFN16 surface mount package.
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MARKING
DIAGRAM
1
16
1
Features/Benefits
845
A
Y
W
G
• ±18 kV ESD Protection on each channel (IEC61000−4−2 Level 4,
Contact Discharge)
• R/C Values of 50 and 17 pF deliver Exceptional S21 Performance
•
•
Characteristics of 115 MHz f3dB and −25 dB Stop Band Attenuation
from 800 MHz to 2.2 GHz
Integrated EMI/ESD System Solution in UDFN Package Offers
Exceptional Cost, System Reliability and Space Savings
This is a Pb−Free Device
Applications
845
AYW
G
DFN
CASE 506AC
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NUF8600MNTXG
DFN16
(Pb−Free)
4000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
• EMI Filtering for LCD and Camera Data Lines
• EMI Filtering and Protection for I/O Ports and Keypads
0
−5
−10
R = 50 Filter + ESDn
Cd = 17 pF Cd = 17 pF
Filter + ESDn
S21 (dB)
−15
−20
−25
−30
−35
See Table 1 for pin description
−40
−45
−50
1.E+06
1.E+07
1.E+08
1.E+09
1.E+10
FREQUENCY (Hz)
Figure 1. Electrical Schematic
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 1
Figure 2. Insertion Loss Characteristic
(S21 Measurement)
1
Publication Order Number:
NUF8600MU/D
NUF8600MN
1
2
3
4
5
6
7
8
10
9
GND
16
15
14
13 12
11
(Bottom View)
Figure 3. Pin Diagram
Table 1. FUNCTIONAL PIN DESCRIPTION
Filter
Device Pins
Filter 1
1 & 16
Filter + ESD Channel 1
Description
Filter 2
2 & 15
Filter + ESD Channel 2
Filter 3
3 & 14
Filter + ESD Channel 3
Filter 4
4 & 13
Filter + ESD Channel 4
Filter 5
5 & 12
Filter + ESD Channel 5
Filter 6
6 & 11
Filter + ESD Channel 6
Filter 7
7 & 10
Filter + ESD Channel 7
Filter 8
8&9
Filter + ESD Channel 8
Ground Pad
GND
Ground
MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
VPP
18
kV
Operating Temperature Range
TOP
−40 to 85
°C
Storage Temperature Range
TSTG
−55 to 150
°C
TL
260
°C
ESD Discharge IEC61000−4−2
Contact Discharge
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Maximum Reverse Working Voltage
Breakdown Voltage
Symbol
Test Conditions
Min
Typ
VRWM
VBR
IR = 1.0 mA
Leakage Current
IR
VRWM = 3.3 V
Resistance
RA
IR = 20 mA
Diode Capacitance
Cd
Line Capacitance
5.0
V
8.0
V
nA
50
58
VR = 2.5 V, f = 1.0 MHz
17
20
pF
CL
VR = 2.5 V, f = 1.0 MHz
34
40
pF
3 dB Cut−Off Frequency (Note 1)
f3dB
Above this frequency,
appreciable attenuation occurs
115
MHz
6 dB Cut−Off Frequency (Note 1)
f6dB
Above this frequency,
appreciable attenuation occurs
190
MHz
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2
42
7.0
Unit
100
1. 50 source and 50 load termination.
6.0
Max
NUF8600MN
TYPICAL PERFORMANCE CURVES (TA= 25°C unless otherwise specified)
0
0
−5
−10
−10
−20
−20
S41 (dB)
S21 (dB)
−15
−25
−30
−35
−40
−50
−40
−60
−45
−50
1.E+06
−30
1.E+07
1.E+08
1.E+09
−70
1.E+06
1.E+10
1.E+07
FREQUENCY (Hz)
Figure 4. Insertion Loss Characteristic
(S21 Measurement)
1.E+09
1.E+10
Figure 5. Analog Crosstalk Curve
(S41 Measurement)
60
2.0
58
1.5
RESISTANCE ()
NORMALIZED CAPACITANCE
1.E+08
FREQUENCY (Hz)
1.0
0.5
56
54
52
50
48
0
0
1.0
2.0
3.0
4.0
46
−40
5.0
−20
0
20
40
60
80
REVERSE VOLTAGE (V)
TEMPERATURE (°C)
Figure 6. Typical Capacitance vs. Reverse Biased Voltage
(Normalized Capacitance Cd at 2.5 V)
Figure 7. Typical Resistance over Temperature
NORMALIZED CAPACITANCE (%)
102.0
101.5
101.0
100.5
100.0
99.5
99.0
98.5
98.0
−60
−40
−20
0
20
40
60
80
100
TEMPERATURE (°C)
Figure 8. Normalized Capacitance over Temperature
(Normalized @ 255C, VR = 2.5 V, f = 1 MHz)
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3
NUF8600MN
Theory of Operation
approximation of a square wave, shown below in
Equations 1 and 2 in the Fourier series approximation.
From this it can be seen that a square wave consists of odd
order harmonics and to fully construct a square wave n must
go to infinity. However, to retain an acceptable portion of the
waveform, the first two terms are generally sufficient. These
two terms contain about 85% of the signal amplitude and
allow a reasonable square wave to be reconstructed.
Therefore, to reasonably pass a square wave of frequency x
the minimum filter bandwidth necessary is 3x. All
ON Semiconductor EMI filters are rated according to this
principle. Attempting to violate this principle will result in
significant rounding of the waveform and cause problems in
transmitting the correct data. For example, take the filter
with the response shown in Figure 9 and apply three
different data waveforms. To calculate these three different
frequencies, the 3 dB, 6 dB, and 9 dB bandwidths will be
used.
The NUF8600MN combines ESD protection and EMI
filtering conveniently into a small package for today’s size
constrained applications. The capacitance inherent to a
typical protection diode is utilized to provide the
capacitance value necessary to create the desired frequency
response based upon the series resistance in the filter. By
combining this functionality into one device, a large number
of discrete components are integrated into one small
package saving valuable board space and reducing BOM
count and cost in the application.
Application Example
The accepted practice for specifying bandwidth in a filter
is to use the 3 dB cutoff frequency. Utilizing points such as
the 6 dB or 9 dB cutoff frequencies results in signal
degradation in an application. This can be illustrated in an
application example. A typical application would include
EMI filtering of data lines in a camera or display interface.
In such an example it is important to first understand the
signal and its spectral content. By understanding these
things, an appropriate filter can be selected for the desired
application. A typical data signal is pattern of 1’s and 0’s
transmitted over a line in a form similar to a square wave.
The maximum frequency of such a signal would be the
pattern 1-0-1-0 such that for a signal with a data rate of
100 Mbps, the maximum frequency component would be
50 MHz. The next item to consider is the spectral content of
the signal, which can be understood with the Fourier series
Equation 1:
a
1 sin((2n * 1) t)
x(t) + 1 ) 2
0
2 n + 1 2n * 1
ƪ
ƫ
(eq. 1)
Equation 2 (simplified form of Equation 1):
ƪ
ƫ
sin( 0t) sin(3 0t) sin(5 0t)
)
)
) AAA (eq. 2)
x(t) + 1 ) 2
1
3
5
2 −3 dB
−6 dB
Magnitude (dB)
−9 dB
f1
f2
100k
1M
f3
100M
10M
1G
10G
Frequency (Hz)
Figure 9. Filter Bandwidth
multiply the result by two). The following table gives the
bandwidth values and the corresponding maximum
supported frequencies and the third harmonic frequencies.
From the above paragraphs it is shown that the maximum
supported frequency of a waveform that can be passed
through the filter can be found by dividing the bandwidth by
a factor of three (to obtain the corresponding data rate
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4
NUF8600MN
with a frequency of 66.67 MHz is input to this same filter,
the third harmonic term is significantly attenuated. This
serves to round the signal edges and skew the waveform, as
is shown in Figure 10b. In the case that a 100 MHz signal is
input to this filter, the third harmonic term is attenuated even
further and results in even more rounding of the signal edges
as is shown in Figure 10c. The result is the degradation of the
data being transmitted making the digital data (1’s and 0’s)
more difficult to discern. This does not include effects of
other components such as interconnect and other path losses
which could further serve to degrade the signal integrity.
While some filter products may specify the 6 dB or 9 dB
bandwidths, actually using these to calculate supported
frequencies (and corresponding data rates) results in
significant signal degradation. To ensure the best signal
integrity possible, it is best to use the 3 dB bandwidth to
calculate the achievable data rate.
Table 2. Frequency Chart
Bandwidth
Maximum Supported
Frequency
Third Harmonic
Frequency
3 dB –
100 MHz
33.33 MHz (f1)
100 MHz
6 dB –
200 MHz
66.67 MHz (f2)
200 MHz
9 dB –
300 MHz
100 MHz (f3)
300 MHz
Considering that 85% of the amplitude of the square is in
the first two terms of the Fourier series approximation most
of the signal content is at the fundamental (maximum
supported) frequency and the third harmonic frequency. If a
signal with a frequency of 33.33 MHz is input to this filter,
the first two terms are sufficiently passed such that the signal
is only mildly affected, as is shown in Figure 10a. If a signal
Input Waveform
Output Waveform
a) Frequency = f1
Input Waveform
Output Waveform
b) Frequency = f2
Input Waveform
c) Frequency = f3
Output Waveform
Figure 10. Input and Output Waveforms of Filter
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5
NUF8600MN
PACKAGE DIMENSIONS
DFN16
CASE 506AC−01
ISSUE B
A
D
B
PIN ONE
REFERENCE
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION b APPLIES TO TERMINAL AND
IS MEASURED BETWEEN 0.25 AND 0.30 MM
FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
E
2X
0.15 C
(A3)
TOP VIEW
2X
DIM
A
A1
A3
b
D
D2
E
E2
e
K
L
0.15 C
(A3)
0.10 C
A
16X
0.08 C
SEATING
PLANE
SIDE VIEW
A1
D2
16X
L
1
e
C
2X
0.25 x 0.40 mm
TEST PAD SIZE
8
SOLDERING FOOTPRINT*
E2
16X
K
16
9
16X b
NOTE 3
MILLIMETERS
MIN
MAX
0.80
1.00
0.00
0.05
0.20 REF
0.18
0.30
4.00 BSC
3.10
3.30
1.60 BSC
0.30
0.50
0.50 BSC
0.20
−−−
0.20
0.40
4.10
14X
0.50 PITCH
0.10 C A B
0.05 C
BOTTOM VIEW
0.50
1.91
16X
0.28
16X 0.51
SCALE 16:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NUF8600MN/D
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