NZT751 C E C B SOT-223 PNP Current Driver Transistor This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 60 V Collector-Base Voltage 80 V Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 4.0 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C VCEO Collector-Emitter Voltage VCBO VEBO *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max Units *NZT751 1.2 9.7 103 W mW/°C °C/W *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. 1997 Fairchild Semiconductor Corporation NZT751 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Sustaining Voltage I C = 10 mA, IB = 0 60 V V(BR)CBO Collector-Base Breakdown Voltage I C = 100 µA, I E = 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage I E = 10 µA, I C = 0 5.0 ICBO Collector-Cutoff Current VCB = 80 V, IE = 0 100 nA IEBO Emitter-Cutoff Current VEB = 4.0 V, IC = 0 0.1 µA 0.3 0.5 1.2 V V V 1.0 V V ON CHARACTERISTICS* hFE DC Current Gain VCE(sat ) Collector-Emitter Saturation Voltage VBE( sat) Base-Emitter Saturation Voltage I C = 50 mA, VCE = 2.0 V I C = 500 mA, VCE = 2.0 V I C = 1.0 A, VCE = 2.0 V I C = 2.0 A, VCE = 2.0 V I C = 1.0 A, IB = 100 mA I C = 2.0 A, IB = 200 mA I C = 1.0 A, IB = 100 mA VBE( on) Base-Emitter On Voltage I C = 1.0 A, VCE = 2.0 V 75 75 75 40 SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product I C = 50 mA, VCE = 5.0 V, f = 100 MHz 75 MHz *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% h FE - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current 140 VCE = 5V 120 100 125 °C 80 25 °C 60 40 - 40 °C 20 0 0.01 IC 0.1 1 - COLLECTOR CURRENT (A) 10 VCESAT- COLLECTOR-EMITTER VOLTAGE (V) DC Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.6 β = 10 0.5 125 °C 0.4 0.3 0.2 25 °C - 40 ºC 0.1 0 0.1 1 I C - COLLECTOR CURRENT (A) P P 5 NZT751 PNP Current Driver Transistor (continued) (continued) Base-Emitter Saturation Voltage vs Collector Current 2 β = 10 1.5 - 40 ºC 1 125 °C 25 °C 0.5 0.1 1 I C - COLLECTOR CURRENT (A) 10 VBE(ON)- BASE-EMITTER ON VOLTAGE (V) VBESAT- BASE-EMITTER VOLTAGE (V) DC Typical Characteristics Base-Emitter ON Voltage vs Collector Current 1.4 1.2 1 - 40 ºC 0.8 125 °C 25 °C 0.6 0.4 VCE= 5V 0.2 0.1 1 I C - COLLECTOR CURRENT (A) P P P 5P ICBO- COLLECTOR CURRENT (nA) Collector-Cutoff Current vs Ambient Temperature 500 100 VCB= 50V 10 1 0.1 25 50 75 100 125 TA - AMBIENT TEMPERATURE (ºC) 150 AC Typical Characteristics POWER DISSIPATION vs AMBIENT TEMPERATURE P D - POWER DISSIPATION (W) 1.2 1 SOT-223 0.8 0.6 0.4 0.2 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 10 NZT751 PNP Current Driver Transistor