Nel OC-A870T10F Micro-miniature ocxo Datasheet

Data Sheet 0635A
CRYSTAL OSCILLATORS
OC-X87XXXXX Series
Micro-miniature OCXO
Features
•
•
•
•
•
•
•
•
•
•
Low Cost DIL 14 package
High Vacuum Sealed Crystal
Low Power Consumption (500 mW)
Fast Warm-up Time (2 minutes)
Stratum3 or better Stability
Low Aging < 3 ppm over life
Very Low Phase Noise (-160dBc/Hz TYP)
HCMOS/TTL or Sine-Wave output
8 MHz to 160 MHz Frequencies Available
Voltage Control Optional
0.800 (20.3 mm)
1
7
Applications
•
•
•
0.500 (12.7 mm)
0.300 (7.6 mm)
Telecommunications
Data Communications
Instrumentation
14
8
0.600 (15.2mm)
0.340 (8.7 mm)
0.250 (6.2 mm)
Vcc
Vc
1
14
DUT
8
OUTPUT
7
357 Beloit Street, P.O. Box 457, Burlington, WI 53105-0457 U.S.A. Phone 262/763-3591 FAX 262/763-2881
Email: [email protected] www.nelfc.com
Data Sheet 0635A
CRYSTAL OSCILLATORS
OC-X87XXXXX Series
Micro-miniature OCXO
Specifications:
Aging
Allan Variance
Calibration
Vcc sensitivity
Load sensitivity
SSB Phase Noise
Retrace
G-sensitivity
Input Voltage
Condition
Min
-0.5
-0.5
-40
-1
8
vs. Temp.
vs. Supply
per day
first year
15 years
.1s to 100s
No voltage control
Max
Unit
Note
5.5
13
85
6
V
3.3V or 5V Vcc
12 V Vcc
°C
V
160
±280
50
MHz
ppb
ppb/V
Electrical Connections
Pin Out
1*
See chart below
after 30 days
3E-6
±2
ppm
5E-8
-100
-130
-145
-160
4.75
3.15
11.4
5.0
3.3
12.0
0.5
dBc/Hz
±100
±2.0
5.25
3.45
12.6
0.7
1.5
2.5
ppb
ppb/G
V
steady state, 25°C
W
steady state, -30°C
start-up
10KOhm//15pF
Load
Internally AC coupled 50 Ohm
to 0.3 ppm accuracy
2
3
min
Warm-up time
τ
-50
-40
dBc
Sub-Harmonics
3.3V HCMOS/TTL compatible, 4 ns Tr/Tf, 40/60% duty cyicle
Output Waveform
Sine-wave, + 7 dBm ±3 dBm into 50 Ohm, -30 dBc harmonics
Vc
0
4.0
V
Control voltage
from nominal F
±5
±10
ppm
Pull range
Monotonic, posit
5
ppm/V
Deviation slope
Vc0
@25°C, Fnom.
1.0
2.0
3.0
V
Setability
Environmental and Mechanical
-30°C to 70°C Standard, Other options – see chart below
Operating temp. range
Per MIL-STD-202, 30G, 11ms
Mechanical Shock
Per MIL-STD-202, 5G to 2000 Hz
Vibration
Leads Temperature 260°C, for 10s, Max
Soldering Conditions
Hermetic Seal
Leak rate less than 1x10-8 atm.ccm/s of helium
Power consumption
P
10.000
±100
10
5E-9
3E-7
5E-11
± 0.5
5E-8/V
For 10% change
10 Hz
100 Hz
1 KHz
>10 KHz
After 30 minutes
worst direction
Vcc
Typ
2*
All parameters for 10 MHz
Parameter
Symb
Absolute Maximum Ratings
Vcc
Input Break
Down Voltage
Ts
Storage temper.
Vc
Control Voltage
Electrical
F
Frequency
Frequency stability
∆F/F
See chart below
Upper operating
temperature < 70°C, add
20% for UOT 85°C
CMOS Output
Sine-wave output
At higher F 1*
See chart below
Customer specified
Customer specified
5V/3.3 supply
Pin 1- Vc; Pin 7- Case, GND; Pin8 – Output; Pin 14 - Vcc
357 Beloit Street, P.O. Box 457, Burlington, WI 53105-0457 U.S.A. Phone 262/763-3591 FAX 262/763-2881
Email: [email protected] www.nelfc.com
Data Sheet 0635A
CRYSTAL OSCILLATORS
OC-X87XXXXX Series
Micro-miniature OCXO
Creating a Part Number
OC – X 87 X X XX X
FREQUENCY, MHz
Package Code
OC 0.8x0.5” 4pin (14pin)
Temperature Range
Code
A
B
C
D
E
F
Supply Voltage
Code
0
A
F
Specification
5V ± 5%
3.3V ± 5%
12V ± 5%
Specification
0°C to 50°C
-10°C to 60°C
0°C to 70°C
-20°C to 70°C
-30°C to 70°C
-40°C to 85°C
Voltage Control
Temperature Stability
Code
V
0
Specification
Voltage
Control
No Voltage
Control
Output
Code
Specification
T
TTL/
CMOS
Sine
S
Code
05
10
28
30
50
YZ
Specification
5x10-8
1x10-7
2.8x10-7
3x10-7
5x10-7
YZx10-8
Not all combinations are available. Consult Factory.
Notes:
1* Higher frequencies can be achieved either by using higher frequency crystals or by low noise analog harmonic
multiplication. Both methods have advantages and drawbacks. If lowest possible phase noise on the noise floor is most important –
high frequency crystal will be used. If phase noise close to the carrier and aging are more important – multiplication will be used.
Please consult factory for your specific requirement.
2* Phase noise deteriorates with frequencies going higher. If analog multiplication is used to achieve higher frequency the
phase noise roughly follows the formula of additional 20LogN, where N is a multiplication factor across entire frequency offset range.
If higher frequency is achieved by using higher frequency crystal phase noise close to the carrier deteriorates due to the lower Q of the
crystal and is usually worse, compared to multiplied solution. On the noise floor, however it remains more or less the same.
357 Beloit Street, P.O. Box 457, Burlington, WI 53105-0457 U.S.A. Phone 262/763-3591 FAX 262/763-2881
Email: [email protected] www.nelfc.com
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