ETC OMY440 Power mosfets in hermetic isolated to-257aa package Datasheet

OMY140 OMY340
OMY240 OMY440
POWER MOSFETS IN HERMETIC ISOLATED
TO-257AA PACKAGE
100V Thru 500V, Up To 14 Amp, N-Channel
MOSFETs In Hermetic Metal Package
FEATURES
•
•
•
•
•
Isolated Hermetic Metal Package
Fast Switching
Low RDS(on)
Available Screened To MIL-S-19500, TX, TXV And S Levels
Equivalent To IRFY 140 Series
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.
MAXIMUM RATINGS @ 25°C
PART NUMBER
OMY140
OMY240
OMY340
OMY440
VDS
100V
200V
400V
500V
SCHEMATIC
RDS(on)
.115
.21
.58
.88
ID(MAX)
14A
14A
10A
7A
CONNECTION DIAGRAM
1. GATE
2. DRAIN
3. SOURCE
1 2 3
4 11 R2
Supersedes 1 07 R1
3.1 - 5
3.1
TC = 25° unless otherwise noted
STATIC P/N OMY140
ELECTRICAL CHARACTERISTICS:
TC = 25° unless otherwise noted
STATIC P/N OMY240
Parameter
Min. Typ. Max. Units Test Conditions
Parameter
Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source Breakdown
100
BVDSS Drain-Source Breakdown
200
V
Voltage
ID = 250 mA
VGS(th)
Gate-Threshold Voltage
IGSSF
Gate-Body Leakage Forward
100
IGSSR
Gate-Body Leakage Reverse
-100
IDSS
VGS = 0,
2.0
4.0
V
V
VGS = 0,
V
VDS = VGS, ID = 250 mA
Voltage
ID = 250 mA
VDS = VGS, ID = 250 mA
VGS(th)
Gate-Threshold Voltage
nA
VGS = 20 V
IGSSF
Gate-Body Leakage Forward
100
nA
VGS = 20 V
nA
VGS = - 20 V
IGSSR
Gate-Body Leakage Reverse
- 100
nA
VGS = - 20 V
IDSS
Zero Gate Voltage Drain
0.1
0.25
mA
VDS = Max. Rat., VGS = 0
Current
0.2
1.0
mA
VDS = 0.8 Max. Rat., VGS = 0,
2.0
4.0
Zero Gate Voltage Drain
0.1
0.25
mA
VDS = Max. Rat., VGS = 0
Current
0.2
1.0
mA
VDS = 0.8 Max. Rat., VGS = 0,
TC = 125° C
On-State Drain Current1
14
VDS(on) Static Drain-Source On-State
1.40 1.73
TC = 125° C
On-State Drain Current1
A
VDS 2 VDS(on), VGS = 10 V
ID(on)
V
VGS = 10 V, ID = 15 A
VDS(on) Static Drain-Source On-State
VGS = 10 V, ID = 15 A
RDS(on) Static Drain-Source On-State
Voltage1
14
1.8
2.1
A
VDS 2 VDS(on), VGS = 10 V
V
VGS = 10 V, ID = 10 A
Voltage1
RDS(on) Static Drain-Source On-State
.115
Resistance1
0.21
VGS = 10 V, ID = 10 A
0.40
VGS = 10 V, ID = 10 A,
Resistance1
RDS(on) Static Drain-Source On-State
.20
VGS = 10 V, ID = 15 A,
RDS(on) Static Drain-Source On-State
Resistance1
TC = 125 C
DYNAMIC
TC = 125 C
DYNAMIC
(W )
3.1 - 6
Resistance1
gfs
Forward Transductance1
Ciss
Input Capacitance
1275
pF
Coss
Output Capacitance
550
Crss
Reverse Transfer Capacitance
Td(on)
tr
(W )
ID(on)
gfs
Forward Transductance1
VGS = 0
Ciss
Input Capacitance
1000
pF
pF
VDS = 25 V
Coss
Output Capacitance
250
pF
VDS = 25 V
160
pF
f = 1 MHz
Crss
Reverse Transfer Capacitance
100
pF
f = 1 MHz
Turn-On Delay Time
16
ns
VDD = 30 V, ID @5 A
Td(on)
Turn-On Delay Time
17
ns
VDD =75 V, ID @ 18 A
Rise Time
19
ns
Rg = 5 W , VGS =10 V
tr
Rise Time
52
ns
Rg =5 W , VGS= 10 V
Td(off)
Turn-Off Delay Time
42
ns
Td(off)
Turn-Off Delay Time
36
ns
tf
Fall Time
24
ns
(MOSFET) switching times are
essentially independent of
operating temperature.
tf
Fall Time
30
ns
(MOSFET) switching times are
essentially independent of
operating temperature.
10
S(W ) VDS 2 VDS(on), ID = 15 A
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS
Continuous Source Current
- 27
A
(Body Diode)
ISM
Diode Forward Voltage1
trr
Reverse Recovery Time
D
IS
Continuous Source Current
G
the integral P-N
- 2.0
V
TC = 25 C, IS = -24 A, VGS = 0
VSD
Diode Forward Voltage1
ns
TJ = 150 C,IF = IS,
trr
Reverse Recovery Time
Junction rectifier.
ISM
A
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
Modified MOSPOWER
D
G
- 72
A
the integral P-N
-1.5
V
TC = 25 C, IS = -18 A, VGS = 0
(Body Diode)
S
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
VGS = 0
symbol showing
Source Current1
A
200
- 18
(Body Diode)
- 108
(Body Diode)
VSD
S(W ) VDS 2 VDS(on), ID = 10 A
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
Modified MOSPOWER
symbol showing
Source Current1
6.0
Junction rectifier.
350
ns
TJ = 150 C,IF = IS,
dlF/ds = 100 A/ms
S
OMY140 - OMY440
3.1
ELECTRICAL CHARACTERISTICS:
ELECTRICAL CHARACTERISTICS:
TC = 25° unless otherwise noted
STATIC P/N OMY340
ELECTRICAL CHARACTERISTICS:
TC = 25° unless otherwise noted
STATIC P/N OMY440
Parameter
Min. Typ. Max. Units Test Conditions
Parameter
Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source Breakdown
400
BVDSS Drain-Source Breakdown
500
V
Voltage
ID = 250 mA
VGS(th)
Gate-Threshold Voltage
IGSSF
Gate-Body Leakage Forward
100
IGSSR
Gate-Body Leakage Reverse
-100
IDSS
VGS = 0,
2.0
4.0
V
V
VGS = 0,
V
VDS = VGS, ID = 250 mA
Voltage
ID = 250 mA
VDS = VGS, ID = 250 mA
VGS(th)
Gate-Threshold Voltage
nA
VGS = 20 V
IGSSF
Gate-Body Leakage Forward
100
nA
VGS = 20 V
nA
VGS = - 20 V
IGSSR
Gate-Body Leakage Reverse
- 100
nA
VGS = - 20 V
IDSS
Zero Gate Voltage Drain
0.1
0.25
mA
VDS = Max. Rat., VGS = 0
Current
0.2
1.0
mA
VDS = 0.8 Max. Rat., VGS = 0,
2.0
4.0
Zero Gate Voltage Drain
0.1
0.25
mA
VDS = Max. Rat., VGS = 0
Current
0.2
1.0
mA
VDS = 0.8 Max. Rat., VGS = 0,
TC = 125° C
On-State Drain Current1
10
VDS(on) Static Drain-Source On-State
2.5
2.9
TC = 125° C
On-State Drain Current1
A
VDS 2 VDS(on), VGS = 10 V
ID(on)
V
VGS = 10 V, ID = 5 A
VDS(on) Static Drain-Source On-State
Voltage1
4.5
3.2
3.52
A
VDS 2 VDS(on), VGS = 10 V
V
VGS = 10 V, ID = 4 A
Voltage1
RDS(on) Static Drain-Source On-State
0.58
VGS = 10 V, ID = 5 A
RDS(on) Static Drain-Source On-State
Resistance1
0.88
VGS = 10 V, ID = 4 A
1.76
VGS = 10 V, ID = 4 A,
Resistance1
RDS(on) Static Drain-Source On-State
1.16
VGS = 10 V, ID = 5 A,
Resistance1
RDS(on) Static Drain-Source On-State
Resistance1
DYNAMIC
TC = 125 C
DYNAMIC
(W )
3.1 - 7
TC = 125 C
gfs
Forward Transductance1
Ciss
Input Capacitance
1150
pF
Coss
Output Capacitance
165
Crss
Reverse Transfer Capacitance
Td(on)
tr
(W )
ID(on)
gfs
Forward Transductance1
VGS = 0
Ciss
Input Capacitance
1225
pF
pF
VDS = 25 V
Coss
Output Capacitance
200
pF
VDS = 25 V
70
pF
f = 1 MHz
Crss
Reverse Transfer Capacitance
85
pF
f = 1 MHz
Turn-On Delay Time
17
ns
VDD = 175 V, ID = 5 A
Td(on)
Turn-On Delay Time
17
ns
VDD = 200 V, ID = 4 A
Rise Time
12
ns
Rg = 5 W , VDS =10V
tr
Rise Time
5
ns
Rg = 5 W , VDS =10 V
Td(off)
Turn-Off Delay Time
45
ns
Td(off)
Turn-Off Delay Time
42
ns
tf
Fall Time
30
ns
tf
Fall Time
14
ns
(MOSFET) switching times are
essentially independent of
operating temperature.
4.0
4.4
S(W ) VDS 2 VDS(on), ID = 5 A
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS
Continuous Source Current
- 10
A
(Body Diode)
ISM
trr
Reverse Recovery Time
IS
Continuous Source Current
G
VGS = 0
A
-2
V
TC = 25 C, IS = -10 A, VGS = 0
VSD
Diode Forward Voltage1
ns
TJ = 150 C,IF = IS,
trr
Reverse Recovery Time
Junction rectifier.
ISM
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
D
G
- 32
A
the integral P-N
-2
V
TC = 25 C, IS = -18 A, VGS = 0
(Body Diode)
S
Modified MOSPOWER
symbol showing
Source Current1
the integral P-N
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
-8
(Body Diode)
A
530
S(W ) VDS 2 VDS(on), ID = 4 A
Junction rectifier.
700
ns
TJ = 150 C,IF = IS,
dlF/ds = 100 A/ms
S
3.1
OMY140 - OMY440
Diode Forward Voltage1
D
- 40
(Body Diode)
VSD
4.8
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
Modified MOSPOWER
symbol showing
Source Current1
4.0
OMY140 - OMY440
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
OMY140
OMY240
OMY340
OMY440
Units
100
200
400
500
V
VDS
Drain-Source Voltage
VDGR
Drain-Gate Voltage (RGS = 1 M )
100
200
400
500
V
ID @ TC = 25°C
Continuous Drain Current 2
± 14
± 14
± 10
±8
A
ID @ TC = 100°C
Continuous Drain Current 2
± 14
± 11
±6
±5
A
IDM
Pulsed Drain Current
± 56
± 56
± 40
± 32
A
VGS
Gate-Source Voltage
± 20
± 20
± 20
± 20
V
PD @ TC = 25°C
Maximum Power Dissipation
125
125
125
125
W
PD @ TC = 100°C
Maximum Power Dissipation
50
50
50
50
W
Junction To Case
Linear Derating Factor
1.0
1.0
1.0
1.0
W/°C
Junction To Ambient Linear Derating Factor
.015
.015
.015
.015
W/°C
1
TJ
Operating and
Tstg
Storage Temperature Range
-55 to 150
Lead Temperature
(1/16" from case for 10 secs.)
300
300
1.00
°C/W
65
°C/W
-55 to 150 -55 to 150 -55 to 150
300
300
1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%.
2 Package pin limitation = 10 Amps
THERMAL RESISTANCE
RthJC
Junction-to-Case
RthJA
Junction-to-Ambient
POWER DERATING
Free Air Operation
MECHANICAL OUTLINE
.200
.190
.420
.410
.045
.035
.665
.645
.150
.140
.537
.527
3.1
.430
.410
.038 MAX.
.750
.500
.035
.025
.100 TYP.
.005
.120 TYP.
PACKAGE OPTIONS
MOD PAK
6 PIN SIP
Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Please call the factory for more information.
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
°C
°C
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