Product Bulletin OP294 June 1996 GaAlAs Plastic Infrared Emitting Diode Types OP294, OP299 Features Absolute Maximum Ratings (TA = 25o C unless otherwise noted) • Characterized at 5mA for battery Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V Continuous Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA Peak Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750 mA Storage and Operating Temperature Range . . . . . . . . . . . . . . . . . . -40o C to +100o C Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260o C(1) Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180 mW(2) operated systems or other low drive current systems • Wide irradiance pattern (OP294) or narrow irradiance pattern (OP299) • Significantly higher power output than GaAs at equivalent drive currents • Wavelength matched to silicon’s peak response • T-1 3/4 package Description The OP294 and OP299 are gallium arsenide infrared emitting diodes designed for low current or power limited applications (such as battery supplies). These LEDs are similar in design to the OP290 and OP295 but use a smaller chip which increases output efficiency at low current levels by increasing current density. Light output can be maximized with continuous (d.c.) forward current up to 100mA or with pulsed forward current operation up to 750 mA. The chip is mounted in an IR transmissive plastic package and has been designed and tested for use with OP593/598 phototransistors or similar photodetector. Optek Technology, Inc. Notes: (1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. A max. of 20 grams force may be applied to the leads when soldering. (2) Derate linearly 1.80 mW/o C above 25o C. (3) Ee(APT) is a measurement of the average apertured radiant energy incident upon a sensing area 0.250" (6.35 mm) in diameter, perpendicular to and centered on the mechanical axis of the lens, and 1.429" (36.3 mm) from the measurement surface. Ee(APT) is not necessarily uniform within the measured area. (4) Ee(APT) is a measurement of the average apertured radiant energy incident upon a sensing area 0.250" (6.35 mm) in diameter, perpendicular to and centered on the mechanical axis of the lens, and .500" (12.7 mm) from the measurement surface. Ee(APT) is not necessarily uniform within the measured area. (5) Cathode lead is 0.070" nominal shorter than anode lead. 1215 W. Crosby Road Carrollton, Texas 75006 2-56 (972) 323-2200 Fax (972) 323-2396 Types OP294, OP299 Electrical Characteristics (TA = 25o C unless otherwise noted) SYMBOL Ee(APT) PARAMETER Apertured Radiant Incidence MIN TYP MAX UNITS OP294 OP299 TEST CONDITIONS 1.50 mW/cm IF = 5 mA(4) 0.45 mW/cm2 IF = 5 mA(3) 2 0.50 0.15 VF Forward Voltage 1.50 V IF = 5 mA IR Reverse Current 10 µA VR = 2 V λp Wavelength at Peak Emission 890 nm IF = 10 mA B Spectral Bandwidth Between Half Power Points 80 nm IF = 10 mA ∆λp/∆T θHP Spectral Shift with Temperature Emission Angle at Half Power Points +0.18 OP294 OP299 o nm/ C IF = Constant 50 20 Deg. Deg. tr Output Rise Time 500 ns tf Output Fall Time 250 ns IF = 10 mA IF = 10 mA IF(PK) = 100 mA, PW = 10 µs, D.C. = 10% Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 2-57