KODENSHI OPA8512CND Infrared led chip Datasheet

OPA8512CND
Infrared LED Chip
High Speed
GaAlAs/GaAlAs
1. Material
Substrate
GaAlAs (N Type) Removed
Epitaxial Layer GaAlAs (P/N Type)
2. Electrode
N(Cathode) Side Gold Alloy
P(Anode) Side Gold Alloy
3. Electro-Optical
Characteristics
Parameter
Symbol
Forward Voltage
Min
VF(1)
Typ
Max
Unit
Condition
V
IF=10uA
V
IF=50mA
1.1
VF(2)
1.6
Reverse Voltage
VR
5
V
IR=10uA
Power
PO
17
mW
IF=50mA
nm
IF=50mA
λP
Wavelength
850
∆λ
45
nm
IF=50mA
Rise Time
Tr
22
ns
Fall Time
Tf
13
ns
※ Note : Power is measured by Sorter E/T system with bare chip.
(b) Bottom Area
(c) Bonding Pad
(d) Chip Thickness
(e) Junction Height
--------------------- 10.8mil x 10.8mil
--------------------- 11.8mil x 11.8mil
--------------------110um
--------------------7mil
--------------------6.5mil
(b)
(d)
(e)
(a)
P Side Electrode
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel. +82 63 839 1111 Fax. +82 63 835 8259
www.auk.co.kr
P Epi
(c)
N Epi
4. Mechanical Data (a) Emission Area
N Side Electrode
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