DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3545 UHF OSCILLATOR AND MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION The 2SC3545 is an NPN silicon epitaxial transistor intended for use as UHF oscillator and mixer in a tuner of a TV receiver. The device features stable oscillation and small frequency drift against any change of the supply voltage and the ambient temperature. It is designed for use in small type equipments especially recommended for Hybrid Integrated Circuit and other applications. PACKAGE DIMENSIONS (Units: mm) 1 3 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) V V V mA PT 150 mW Tj Tstg 65 125 to +125 +0.1 30 15 3.0 50 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector 0 to 0.1 VCBO VCEO VEBO IC 0.16 −0.06 0.3 Marking 1.1 to 1.4 Maximum Voltages and Current Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Maximum Power Dissipation Total Power Dissipation Maximum Temperature Junction Temperature Storage Temperature +0.1 2 0.65 −0.15 0.4 −0.05 • High Gain Bandwidth Procuct; fT = 2 000 MHz TYP. • Low Collector to Base Time Constant; CC rb’b = 4 ps TYP. • Low Feedback Capacitance; Cre = 0.48 pF TYP. 0.95 FEATURES +0.1 1.5 0.95 2.9±0.2 +0.1 0.4 −0.05 2.8±0.2 C C ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC SYMBOL Collector Cutoff Current ICBO DC Current Gain hFE Collector Saturation Voltage 50 TYP. 100 VCE(sat) Gain Bandwidth Product fT Output Capacitance Collector to Base Time Constant MIN. MAX. UNIT 0.1 A 250 0.5 1.3 2.0 TEST CONDITIONS VCB = 12 V, IE = 0 VCE = 10 V, IC = 5.0 mA V IC = 10 mA, IB = 1.0 mA MHz VCE = 10 V, IE = 5.0 mA Cob 0.48 1.0 pF VCB = 10 V, IE = 0, f = 1.0 MHz CC rb’b 4 10 ps VCE = 10 V, IE = 5.0 mA, f = 31.9 MHz hFE Classification Class M/P * L/Q * K/R * Marking T42 T43 T44 hFE 50 to 100 70 to 140 120 to 250 Document No. P10358EJ2V1DS00 (2nd edition) Date Published March 1997 N Printed in Japan * Old Specification / New Specification © 1984 2SC3545 TYPICAL CHARACTERISTICS (TA = 25 C) TYPICAL DEVICE CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 3 f = 1.0 MHz Free air Cre-Feed-back Capacitance-pF PT-Total Power Dissipation-W 300 250 200 150 100 50 2 1 0.7 0.5 0.3 0.2 25 0 50 75 100 125 0.1 1 TA-Ambient Temperature-°C DC CURRENT GAIN vs. COLLECTOR CURRENT 15 Gmax-Maximum Available Gain-dB |S21e|2-Insertion Gain-dB hFE-DC Current Gain VCE = 10 V 100 50 20 1 5 10 MAG 10 |S21e|2 5 0 0.5 50 1 5.0 3.0 2.0 1.0 0.5 0.3 0.2 VCE = 10 V 10 IC-Collector Current-mA 2 10 50 70 COLLECTOR TO BASE TIME CONSTANT vs. COLLECTOR CURRENT CC.rb'b-Collector to Base Time Constant-ps fT-Gain Bandwidth Product-MHz 10 5.0 5 IC-Collector Current-mA GAIN BANDWIDTH PROUDCT vs. COLLECTOR CURRENT 0.5 1.0 30 VCE = 10 V f = 1.0 GHz IC-Collector Current-mA 0.1 0.1 20 INSERTION GAIN, MAXIMUM AVAILABLE GAIN vs. COLLECTOR CURRENT 200 10 0.5 2 3 5 7 10 VCB-Collector to Base Voltage-V 30 15 10 5 VCE = 10 V f = 31.9 MHz 0 0.5 1 5 10 IC-Collector Current-mA 50 70 2SC3545 S-PARAMETER VCE = 10 V, IC = 5 mA, ZO = 50 f (MHz) S11 200 0.472 400 0.310 600 0.261 S11 80.6 S21 S21 S12 S12 S22 7.581 114.1 0.037 60.2 0.780 4.029 92.9 0.055 55.5 0.723 2.926 81.7 0.077 60.2 0.721 2.118 70.2 0.098 62.8 0.698 1.860 62.8 0.108 64.6 0.691 800 0.262 1000 0.270 117.3 139.9 160.4 176.6 1200 0.288 172.3 1.504 54.4 0.125 65.7 0.688 1400 0.323 162.4 1.413 47.9 0.148 66.4 0.664 1600 0.356 151.0 1.201 40.9 0.160 68.0 0.658 S22 8.2 15.1 18.8 22.6 25.1 30.7 35.1 39.3 VCE = 10 V, IC = 10 mA, ZO = 50 S11 S11 S21 S21 S12 S12 S22 200 0.323 104.9 0.037 49.5 0.711 0.246 4.383 87.4 0.052 65.2 0.693 600 0.247 3.120 78.0 0.074 67.3 0.696 800 0.273 101.4 136.2 158.8 173.7 8.735 400 2.259 67.2 0.086 68.2 0.679 1000 0.299 172.6 1.968 60.1 0.102 69.4 0.671 1200 0.314 162.7 1.589 52.5 0.126 70.1 0.663 1400 0.353 154.5 1.483 46.3 0.146 70.4 0.648 1600 0.380 144.7 1.257 39.5 0.166 70.3 0.648 f (MHz) S22 8.5 13.8 16.8 20.0 23.8 26.6 33.7 38.5 3 2SC3545 S-PARAMETER S11e, S22e-FREQUENCY 1.2 1.0 0.9 0.1 6 0.3 4 70 1.6 0.6 0. 18 32 0. 1.8 0.2 0.1 0.3 7 3 600 1.4 0 12 0.15 0.35 80 T EN 4 0. 0 3. 0.6 1 0.2 9 0.2 30 O 0.8 4.0 1.0 0 1. 6.0 0.3 0.6 10 0.4 0.1 20 10 5.0 20 10 0.27 0.23 0 1. 5.0 ) 1.0 E NC TA X AC −J––O– RE –Z 0.8 0 ( 4.0 0.6 3. E IV AT NE G 0.4 5 0. 0. 31 19 2.0 1.8 1.6 1.4 1.2 0.36 0.14 −80 1.0 0.35 0.15 −70 0.9 0 4 0.3 6 0.1 0.2 0.8 3 0.3 7 0.1 −6 0.7 32 18 0. 0. 0 0.6 −5 0. 0.2 8 0.2 2 −20 0 −4 0 −11 0.38 0.39 0.12 0.11 −100 −90 0.37 0.13 S12e-FREQUENCY 0.40 0.10 0. 4 0. 3 07 30 −1 0.4 9 0 2 −1 .08 20 0.4 1 0.0 VCE = 10 V, 200 MHz Step 0 . 2 9 0.2 1 0.3 −3 0.2 0 0 0 CONDITION S22e 1.6 GHz IC = 5 mA IC = 10 mA −10 8 0. 0.2 GHz 0.26 0.24 0.6 4 0. 50 0.4 0.2 S21e-FREQUENCY 4.0 0.2 GHz ) S11e 0.1 0.3 3.0 1.8 2.0 1.6 1.4 1.2 0.9 1.0 0.7 0.8 0.6 0.5 0.4 0.3 0.2 ( 0.25 0.25 REACTANCE COMPONENT R –––– 0.2 ZO 0 0.2 20 50 WAVELE NG 0.2 0.8 1.6 GHz 0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20 ( –Z–+–J–XTANCE CO ) MPO 0.4 0 0.2 0 0.3 N 0. 5 2.0 50 40 THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.0 GENE 0.01 7 0.48 3 RA 0.4 0.02 RD LOAD 0.4 0.0TOR 3 HS TOWLAE OF REFLECTION COEFFCIENT IN 6 7 .0 DEG 0NGT ANG 4 0.4 REE 0 E 0.4 6 L 0 S .0W4AVE −1 6 0 .0 0 5 15 0.4 5 0.4 5 50 0 −1 .0 5 0 0. 0 44 POS . T 0.1 N 14 0.4 6 0 06 40 E ITIV ON 0 ER 4 MP 0. −1 EA CO C 2 0.4 90 19 0. 31 0. 07 43 0. 0 13 0. 0.14 0.36 0.7 0 0.10 0.40 110 VCE = 10 V, 200 MHz Step 0.13 0.37 0.12 0.38 0.11 0.39 100 0.8 9 0.0 1 0.4 .08 CONDITION CONDITION VCE = 10 V, 200 MHz Step 90° 90° 120° 120° 60° 60° 0.2 GHz 1.6 GHz 30° 150° 150° 30° S12e S21e 0.2 GHz 1.6 GHz 180° −150° 0 4 6 IC = 5 mA IC = 10 mA 8 −30° −60° −120° −90° 4 2 0° 180° 10 −150° 0 0.05 0.1 0.15 IC = 5 mA IC = 10 mA 0° 0.2 0.25 −30° −60° −120° −90° 2SC3545 [MEMO] 5 2SC3545 [MEMO] 6 2SC3545 [MEMO] 7 2SC3545 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". 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Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5