PESD3V3X1BL Ultra low capacitance bidirectional ESD protection diode Rev. 01 — 6 January 2009 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a leadless ultra small Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and other transients. 1.2 Features n Bidirectional ESD protection of one line n ESD protection up to 9 kV n Ultra low diode capacitance: Cd = 1.3 pF n IEC 61000-4-2; level 4 (ESD) n Very low leakage current: IRM = 1 nA n AEC-Q101 qualified 1.3 Applications n n n n n n USB interfaces Antenna protection 10/100/1000 Mbit/s Ethernet FireWire High-speed data lines Subscriber Identity Module (SIM) card protection n n n n n Cellular handsets and accessories Portable electronics Communication systems Computers and peripherals Audio and video equipment 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit - - 3.3 V - 1.3 1.6 pF Per diode VRWM reverse standoff voltage Cd diode capacitance f = 1 MHz; VR = 0 V PESD3V3X1BL NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 2. Pinning information Table 2. Pinning Pin Description 1 cathode (diode 1) 2 cathode (diode 2) Simplified outline Graphic symbol 1 1 2 2 006aab041 Transparent top view 3. Ordering information Table 3. Ordering information Type number PESD3V3X1BL Package Name Description Version - leadless ultra small plastic package; 2 terminals; body 1.0 × 0.6 × 0.5 mm SOD882 4. Marking Table 4. Marking codes Type number Marking code PESD3V3X1BL SS 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per device Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C Table 6. ESD maximum ratings Tamb = 25 °C unless otherwise specified. Symbol VESD Parameter Conditions electrostatic discharge voltage IEC 61000-4-2 (contact discharge) MIL-STD-883 (human body model) [1] Min Max Unit - 9 kV - 10 kV Device stressed with ten non-repetitive ESD pulses. PESD3V3X1BL_1 Product data sheet [1] © NXP B.V. 2009. All rights reserved. Rev. 01 — 6 January 2009 2 of 11 PESD3V3X1BL NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode Table 7. ESD standards compliance Standard Conditions IEC 61000-4-2; level 4 (ESD) > 8 kV (contact) MIL-STD-883; class 3 (human body model) > 4 kV 001aaa631 IPP 100 % 90 % 10 % tr = 0.7 ns to 1 ns t 30 ns 60 ns Fig 1. ESD pulse waveform according to IEC 61000-4-2 PESD3V3X1BL_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 6 January 2009 3 of 11 PESD3V3X1BL NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 6. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode VRWM reverse standoff voltage - - 3.3 V IRM reverse leakage current VRWM = 3 V - 1 100 nA VBR breakdown voltage IR = 5 mA 5.0 6.3 7.8 V Cd diode capacitance f = 1 MHz; VR = 0 V - 1.3 1.6 pF rdif differential resistance IR = 5 mA - - 100 Ω 006aab412 1.24 IPP Cd (pF) 1.20 −VCL −VBR −VRWM IR IRM −IRM −IR VRWM VBR VCL 1.16 − 1.12 0 1 2 3 4 + −IPP 5 VR (V) 006aaa676 f = 1 MHz; Tamb = 25 °C Fig 2. Diode capacitance as a function of reverse voltage; typical values Fig 3. V-I characteristics for a bidirectional ESD protection diode PESD3V3X1BL_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 6 January 2009 4 of 11 PESD3V3X1BL NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode ESD TESTER 450 Ω RZ RG 223/U 50 Ω coax 4 GHz DIGITAL OSCILLOSCOPE 10× ATTENUATOR 50 Ω CZ IEC 61000-4-2 network CZ = 150 pF; RZ = 330 Ω DUT (DEVICE UNDER TEST) vertical scale = 2 kV/div horizontal scale = 15 ns/div vertical scale = 20 V/div horizontal scale = 100 ns/div GND GND unclamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) clamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) pin 1 to 2 vertical scale = 2 kV/div horizontal scale = 15 ns/div GND GND vertical scale = 20 V/div horizontal scale = 100 ns/div unclamped −8 kV ESD pulse waveform (IEC 61000-4-2 network) Fig 4. clamped −8 kV ESD pulse waveform (IEC 61000-4-2 network) pin 1 to 2 006aab413 ESD clamping test setup and waveforms PESD3V3X1BL_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 6 January 2009 5 of 11 PESD3V3X1BL NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 7. Application information The PESD3V3X1BL is designed for the protection of one bidirectional data or signal line from the damage caused by ESD. The device may be used on lines where the signal polarities are both, positive and negative with respect to ground. line to be protected DUT GND 006aab250 Fig 5. Application diagram Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD and Electrical Fast Transient (EFT). The following guidelines are recommended: 1. Place the device as close to the input terminal or connector as possible. 2. The path length between the device and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias. 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PESD3V3X1BL_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 6 January 2009 6 of 11 PESD3V3X1BL NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 9. Package outline 0.50 0.46 0.62 0.55 2 0.30 0.22 0.65 0.30 0.22 1 0.55 0.47 cathode marking on top side Dimensions in mm Fig 6. 1.02 0.95 03-04-17 Package outline PESD3V3X1BL (SOD882) 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 10000 PESD3V3X1BL [1] SOD882 2 mm pitch, 8 mm tape and reel For further information and the availability of packing methods, see Section 14. PESD3V3X1BL_1 Product data sheet -315 © NXP B.V. 2009. All rights reserved. Rev. 01 — 6 January 2009 7 of 11 PESD3V3X1BL NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 11. Soldering 1.3 0.7 R0.05 (8×) solder lands 0.6 0.7 (2×) (2×) 0.9 solder resist solder paste occupied area 0.3 (2×) Dimensions in mm 0.4 (2×) sod882_fr Reflow soldering is the only recommended soldering method. Fig 7. Reflow soldering footprint PESD3V3X1BL (SOD882) PESD3V3X1BL_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 6 January 2009 8 of 11 PESD3V3X1BL NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PESD3V3X1BL_1 20090106 Product data sheet - - PESD3V3X1BL_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 6 January 2009 9 of 11 PESD3V3X1BL NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. ESD protection devices — These products are only intended for protection against ElectroStatic Discharge (ESD) pulses and are not intended for any other usage including, without limitation, voltage regulation applications. NXP Semiconductors accepts no liability for use in such applications and therefore such use is at the customer’s own risk. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PESD3V3X1BL_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 6 January 2009 10 of 11 PESD3V3X1BL NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Quality information . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packing information. . . . . . . . . . . . . . . . . . . . . . 7 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 6 January 2009 Document identifier: PESD3V3X1BL_1