PESD5V0V1BA; PESD5V0V1BB; PESD5V0V1BL Very low capacitance bidirectional ESD protection diodes Rev. 01 — 28 July 2009 Product data sheet 1. Product profile 1.1 General description Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in small Surface-Mounted Device (SMD) plastic packages designed to protect one signal line from the damage caused by ESD and other transients. Table 1. Product overview Type number Package Package configuration NXP JEITA PESD5V0V1BA SOD323 SC-76 very small PESD5V0V1BB SOD523 SC-79 ultra small and flat lead PESD5V0V1BL SOD882 - leadless ultra small 1.2 Features n n n n n Bidirectional ESD protection of one line Very low diode capacitance: Cd = 11 pF Max. peak pulse power: PPP = 45 W Low clamping voltage: VCL = 12.5 V Ultra low leakage current: IRM < 1 nA n n n n ESD protection up to 30 kV IEC 61000-4-2; level 4 (ESD) IEC 61000-4-5 (surge); IPP = 4.8 A AEC-Q101 qualified n n n n Communication systems Portable electronics 10/100 Mbit/s Ethernet FireWire 1.3 Applications n n n n Computers and peripherals Audio and video equipment Cellular handsets and accessories Subscriber Identity Module (SIM) card protection 1.4 Quick reference data Table 2. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter VRWM reverse standoff voltage Cd diode capacitance Conditions f = 1 MHz; VR = 0 V Min Typ Max Unit - - 5 V - 11 13 pF PESD5V0V1BA/BB/BL NXP Semiconductors Very low capacitance bidirectional ESD protection diodes 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol PESD5V0V1BA; PESD5V0V1BB 1 cathode (diode 1) 2 cathode (diode 2) [1] 1 1 2 2 sym045 001aab540 PESD5V0V1BL 1 cathode (diode 1) 2 cathode (diode 2) [1] 1 1 2 2 sym045 Transparent top view [1] The marking bar indicates pin 1. 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PESD5V0V1BA SC-76 plastic surface-mounted package; 2 leads SOD323 PESD5V0V1BB SC-79 plastic surface-mounted package; 2 leads SOD523 PESD5V0V1BL - leadless ultra small plastic package; 2 terminals; body 1.0 × 0.6 × 0.5 mm SOD882 4. Marking Table 5. Marking codes Type number Marking code PESD5V0V1BA 1K PESD5V0V1BB Z9 PESD5V0V1BL X1 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions PPP peak pulse power tp = 8/20 µs IPP peak pulse current tp = 8/20 µs Min Max Unit [1] - 45 W [1] - 4.8 A Per diode PESD5V0V1BA_BB_BL_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 28 July 2009 2 of 13 PESD5V0V1BA/BB/BL NXP Semiconductors Very low capacitance bidirectional ESD protection diodes Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per device Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. Table 7. ESD maximum ratings Tamb = 25 °C unless otherwise specified. Symbol Parameter electrostatic discharge voltage VESD [1] Conditions Min Max Unit - 30 kV machine model - 2 kV MIL-STD-883 (human body model) - 16 kV [1] IEC 61000-4-2 (contact discharge) Device stressed with ten non-repetitive ESD pulses. Table 8. ESD standards compliance Standard Conditions IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact) MIL-STD-883; class 3B (human body model) > 8 kV 001aaa631 IPP 001aaa630 120 100 % 90 % 100 % IPP; 8 µs IPP (%) 80 e−t 50 % IPP; 20 µs 40 10 % 0 10 20 30 30 ns 40 t (µs) Fig 1. t tr = 0.7 ns to 1 ns 0 8/20 µs pulse waveform according to IEC 61000-4-5 60 ns Fig 2. ESD pulse waveform according to IEC 61000-4-2 PESD5V0V1BA_BB_BL_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 28 July 2009 3 of 13 PESD5V0V1BA/BB/BL NXP Semiconductors Very low capacitance bidirectional ESD protection diodes 6. Characteristics Table 9. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter VRWM reverse standoff voltage IRM reverse leakage current VBR breakdown voltage Cd diode capacitance f = 1 MHz; VR = 0 V VCL clamping voltage IPP = 4.8 A rdif differential resistance IR = 5 mA [1] Conditions Min Typ Max Unit - - 5 V VRWM = 5 V - <1 10 nA IR = 5 mA 5.8 6.8 7.8 V - 11 13 pF [1] - - 12.5 V - - 35 Ω Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. 006aab606 103 001aaa193 1.2 PPP PPP (W) PPP(25°C) 102 0.8 10 0.4 1 1 10 102 0 103 0 tp (µs) 50 100 150 200 Tj (°C) Tamb = 25 °C Fig 3. Peak pulse power as a function of exponential pulse duration; typical values Fig 4. Relative variation of peak pulse power as a function of junction temperature; typical values PESD5V0V1BA_BB_BL_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 28 July 2009 4 of 13 PESD5V0V1BA/BB/BL NXP Semiconductors Very low capacitance bidirectional ESD protection diodes 006aab607 12 006aab608 103 IRM IRM(25°C) Cd (pF) 102 10 10 1 8 10−1 10−2 −100 6 0 1 2 3 4 5 −50 0 VR (V) 50 100 150 Tj (°C) f = 1 MHz; Tamb = 25 °C Fig 5. Diode capacitance as a function of reverse voltage; typical values Fig 6. Relative variation of reverse leakage current as a function of junction temperature; typical values IPP −VCL −VBR −VRWM IR IRM −IRM −IR VRWM VBR VCL − + −IPP 006aaa676 Fig 7. V-I characteristics for a bidirectional ESD protection diode PESD5V0V1BA_BB_BL_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 28 July 2009 5 of 13 PESD5V0V1BA/BB/BL NXP Semiconductors Very low capacitance bidirectional ESD protection diodes ESD TESTER acc. to IEC 61000-4-2 CZ = 150 pF; RZ = 330 Ω 4 GHz DIGITAL OSCILLOSCOPE 450 Ω RZ RG 223/U 50 Ω coax 10× ATTENUATOR 50 Ω CZ DUT (DEVICE UNDER TEST) vertical scale = 10 V/div horizontal scale = 100 ns/div vertical scale = 10 A/div horizontal scale = 15 ns/div GND GND clamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) unclamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) vertical scale = 10 V/div horizontal scale = 100 ns/div vertical scale = 10 A/div horizontal scale = 15 ns/div GND GND clamped −8 kV ESD pulse waveform (IEC 61000-4-2 network) unclamped −8 kV ESD pulse waveform (IEC 61000-4-2 network) Fig 8. 006aab609 ESD clamping test setup and waveforms PESD5V0V1BA_BB_BL_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 28 July 2009 6 of 13 PESD5V0V1BA/BB/BL NXP Semiconductors Very low capacitance bidirectional ESD protection diodes 7. Application information The PESD5V0V1Bx series is designed for the protection of one bidirectional data or signal line from the damage caused by ESD and surge pulses. The devices may be used on lines where the signal polarities are both, positive or negative with respect to ground. The PESD5V0V1Bx series provides a surge capability of 45 W per line for an 8/20 µs waveform. line to be protected PESD5V0V1Bx GND 006aab610 Fig 9. Application diagram Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the device as close to the input terminal or connector as possible. 2. The path length between the device and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias. 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PESD5V0V1BA_BB_BL_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 28 July 2009 7 of 13 PESD5V0V1BA/BB/BL NXP Semiconductors Very low capacitance bidirectional ESD protection diodes 9. Package outline 1.35 1.15 0.45 0.15 1 2.7 2.3 0.85 0.75 1.1 0.8 0.65 0.58 1 1.65 1.25 1.55 1.15 1.8 1.6 2 2 0.40 0.25 0.25 0.10 0.34 0.26 Dimensions in mm 03-12-17 Fig 10. Package outline PESD5V0V1BA (SOD323/SC-76) 0.17 0.11 Dimensions in mm 02-12-13 Fig 11. Package outline PESD5V0V1BB (SOD523/SC-79) 0.50 0.46 0.62 0.55 2 0.30 0.22 0.65 0.30 0.22 1.02 0.95 1 0.55 0.47 cathode marking on top side Dimensions in mm 03-04-17 Fig 12. Package outline PESD5V0V1BL (SOD882) 10. Packing information Table 10. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package PESD5V0V1BA SOD323 PESD5V0V1BB SOD523 PESD5V0V1BL [1] SOD882 Description 4 mm pitch, 8 mm tape and reel 3000 8000 10000 -115 - -135 2 mm pitch, 8 mm tape and reel - -315 - 4 mm pitch, 8 mm tape and reel -115 - -135 2 mm pitch, 8 mm tape and reel - - -315 For further information and the availability of packing methods, see Section 14. PESD5V0V1BA_BB_BL_1 Product data sheet Packing quantity © NXP B.V. 2009. All rights reserved. Rev. 01 — 28 July 2009 8 of 13 PESD5V0V1BA/BB/BL NXP Semiconductors Very low capacitance bidirectional ESD protection diodes 11. Soldering 3.05 2.1 solder lands solder resist 0.5 (2×) 1.65 0.95 0.6 (2×) solder paste occupied area 2.2 Dimensions in mm 0.5 (2×) 0.6 (2×) sod323_fr Fig 13. Reflow soldering footprint PESD5V0V1BA (SOD323/SC-76) 5 2.9 1.5 (2×) solder lands solder resist occupied area 2.75 1.2 (2×) Dimensions in mm preferred transport direction during soldering sod323_fw Fig 14. Wave soldering footprint PESD5V0V1BA (SOD323/SC-76) PESD5V0V1BA_BB_BL_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 28 July 2009 9 of 13 PESD5V0V1BA/BB/BL NXP Semiconductors Very low capacitance bidirectional ESD protection diodes 2.15 1.1 solder lands solder resist 0.5 0.6 (2×) (2×) 1.2 solder paste occupied area Dimensions in mm 0.7 (2×) 0.8 (2×) sod523_fr Reflow soldering is the only recommended soldering method. Fig 15. Reflow soldering footprint PESD5V0V1BB (SOD523/SC-79) 1.3 0.7 R0.05 (8×) solder lands 0.6 0.7 (2×) (2×) 0.9 solder resist solder paste occupied area 0.3 (2×) Dimensions in mm 0.4 (2×) sod882_fr Reflow soldering is the only recommended soldering method. Fig 16. Reflow soldering footprint PESD5V0V1BL (SOD882) PESD5V0V1BA_BB_BL_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 28 July 2009 10 of 13 PESD5V0V1BA/BB/BL NXP Semiconductors Very low capacitance bidirectional ESD protection diodes 12. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes PESD5V0V1BA_BB_BL_1 20090728 Product data sheet - - PESD5V0V1BA_BB_BL_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 28 July 2009 11 of 13 PESD5V0V1BA/BB/BL NXP Semiconductors Very low capacitance bidirectional ESD protection diodes 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PESD5V0V1BA_BB_BL_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 28 July 2009 12 of 13 PESD5V0V1BA/BB/BL NXP Semiconductors Very low capacitance bidirectional ESD protection diodes 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 7 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Quality information . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information. . . . . . . . . . . . . . . . . . . . . . 8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 28 July 2009 Document identifier: PESD5V0V1BA_BB_BL_1