PESD5V0X1BQ; PESD5V0X1BT Ultra low capacitance bidirectional ESD protection diodes Rev. 01 — 30 October 2008 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in small Surface-Mounted Device (SMD) plastic packages designed to protect one signal line from the damage caused by ESD and other transients. The devices may also be used for unidirectional ESD protection of up to two signal lines. Table 1. Product overview Type number Package Package configuration NXP JEDEC PESD5V0X1BQ SOT663 - ultra small and flat lead PESD5V0X1BT SOT23 TO-236AB very small 1.2 Features n Bidirectional ESD protection of one line n ESD protection up to 9 kV n Unidirectional ESD protection of up to n IEC 61000-4-2; level 4 (ESD) two lines n Ultra low diode capacitance: Cd = 0.9 pF n AEC-Q101 qualified n Very low leakage current: IRM = 1 nA 1.3 Applications n USB interfaces n n n n n Antenna protection Radio Frequency (RF) protection 10/100/1000 Mbit/s Ethernet FireWire Asymmetric Digital Subscriber Line (ADSL) n High-speed data lines n Subscriber Identity Module (SIM) card protection n Computers, peripherals and printers n Cellular handsets and accessories n Portable electronics n Communication systems n Audio and video equipment PESD5V0X1BQ; PESD5V0X1BT NXP Semiconductors Ultra low capacitance bidirectional ESD protection diodes 1.4 Quick reference data Table 2. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode VRWM reverse standoff voltage Cd diode capacitance f = 1 MHz; VR = 0 V - - 5 V [1] - 0.9 1.3 pF [2] - 2 2.6 pF [1] Bidirectional configuration: measured from pin 1 to 2 or pin 2 to 1. [2] Unidirectional configuration: measured from pin 1 to 3 or pin 2 to 3. 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol PESD5V0X1BQ 1 cathode (diode 1) 2 cathode (diode 2) 3 common anode 3 3 1 2 1 2 006aaa154 PESD5V0X1BT 1 cathode (diode 1) 2 cathode (diode 2) 3 common anode 3 1 3 2 1 2 006aaa154 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PESD5V0X1BQ - plastic surface-mounted package; 3 leads SOT663 PESD5V0X1BT - plastic surface-mounted package; 3 leads SOT23 PESD5V0X1BQ_PESD5V0X1BT_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 30 October 2008 2 of 13 PESD5V0X1BQ; PESD5V0X1BT NXP Semiconductors Ultra low capacitance bidirectional ESD protection diodes 4. Marking Table 5. Marking codes Type number Marking code[1] PESD5V0X1BQ E6 PESD5V0X1BT U3* [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per device Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C Table 7. ESD maximum ratings Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions electrostatic discharge voltage IEC 61000-4-2 (contact discharge) Min Max Unit - 9 kV - 10 kV Per diode VESD MIL-STD-883 (human body model) [1] [1] Device stressed with ten non-repetitive ESD pulses. Table 8. ESD standards compliance Standard Conditions Per diode IEC 61000-4-2; level 4 (ESD) > 8 kV (contact) MIL-STD-883; class 3 (human body model) > 4 kV PESD5V0X1BQ_PESD5V0X1BT_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 30 October 2008 3 of 13 PESD5V0X1BQ; PESD5V0X1BT NXP Semiconductors Ultra low capacitance bidirectional ESD protection diodes 001aaa631 IPP 100 % 90 % 10 % t tr = 0.7 ns to 1 ns 30 ns 60 ns Fig 1. ESD pulse waveform according to IEC 61000-4-2 6. Characteristics Table 9. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode VRWM reverse standoff voltage - - 5 V IRM reverse leakage current VRWM = 5 V - 1 100 nA VBR breakdown voltage IR = 5 mA 5.8 7.5 9.5 V Cd diode capacitance f = 1 MHz [1] - 0.9 1.3 pF [2] - 2 2.6 pF [1] - 0.8 1.2 pF [2] - 1.7 2.3 pF - - 100 Ω VR = 0 V VR = 5 V rdif differential resistance IR = 1 mA [1] Bidirectional configuration: measured from pin 1 to 2 or pin 2 to 1. [2] Unidirectional configuration: measured from pin 1 to 3 or pin 2 to 3. PESD5V0X1BQ_PESD5V0X1BT_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 30 October 2008 4 of 13 PESD5V0X1BQ; PESD5V0X1BT NXP Semiconductors Ultra low capacitance bidirectional ESD protection diodes 006aab249 1.0 Cd (pF) 006aab348 2.0 Cd (pF) 0.96 1.9 0.92 1.8 0.88 1.7 0.84 1.6 0.80 0 1 2 3 4 5 0 1 2 3 4 VR (V) Fig 2. 5 VR (V) bidirectional configuration unidirectional configuration f = 1 MHz; Tamb = 25 °C f = 1 MHz; Tamb = 25 °C Diode capacitance as a function of reverse voltage; typical values Fig 3. Diode capacitance as a function of reverse voltage; typical values I IPP −VCL −VBR −VRWM −VCL −VBR −VRWM IR IRM −IRM −IR V −IRM −IR VRWM VBR VCL − − + −IPP −IPP 006aaa676 Fig 4. V-I characteristics for a bidirectional ESD protection diode 006aaa407 Fig 5. V-I characteristics for a unidirectional ESD protection diode PESD5V0X1BQ_PESD5V0X1BT_1 Product data sheet + P-N © NXP B.V. 2008. All rights reserved. Rev. 01 — 30 October 2008 5 of 13 PESD5V0X1BQ; PESD5V0X1BT NXP Semiconductors Ultra low capacitance bidirectional ESD protection diodes ESD TESTER 450 Ω RZ RG 223/U 50 Ω coax 4 GHz DIGITAL OSCILLOSCOPE 10× ATTENUATOR 50 Ω CZ IEC 61000-4-2 network CZ = 150 pF; RZ = 330 Ω DUT (DEVICE UNDER TEST) vertical scale = 2 kV/div horizontal scale = 15 ns/div vertical scale = 20 V/div horizontal scale = 100 ns/div GND GND unclamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) clamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) pin 1 to 2 vertical scale = 2 kV/div horizontal scale = 15 ns/div GND GND vertical scale = 20 V/div horizontal scale = 100 ns/div unclamped −8 kV ESD pulse waveform (IEC 61000-4-2 network) Fig 6. clamped −8 kV ESD pulse waveform (IEC 61000-4-2 network) pin 1 to 2 006aab336 ESD clamping test setup and waveforms PESD5V0X1BQ_PESD5V0X1BT_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 30 October 2008 6 of 13 PESD5V0X1BQ; PESD5V0X1BT NXP Semiconductors Ultra low capacitance bidirectional ESD protection diodes 7. Application information PESD5V0X1BQ and PESD5V0X1BT are designed for the protection of one bidirectional data or signal line from the damage caused by ESD. The devices may be used on lines where the signal polarities are both, positive and negative with respect to ground. PESD5V0X1BQ and PESD5V0X1BT may also be used for the protection of two unidirectional data or signal lines, which have positive signal polarities with respect to ground. line 1 to be protected line 1 to be protected line 2 to be protected DUT GND bidirectional protection of one line DUT GND unidirectional protection of two lines 006aab252 Fig 7. Application diagram Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD and Electrical Fast Transient (EFT). The following guidelines are recommended: 1. Place the device as close to the input terminal or connector as possible. 2. The path length between the device and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias. 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PESD5V0X1BQ_PESD5V0X1BT_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 30 October 2008 7 of 13 PESD5V0X1BQ; PESD5V0X1BT NXP Semiconductors Ultra low capacitance bidirectional ESD protection diodes 9. Package outline 1.7 1.5 0.6 0.5 3.0 2.8 3 1.1 0.9 3 0.3 0.1 1.7 1.5 0.45 0.15 2.5 1.4 2.1 1.2 1.3 1.1 1 1 2 0.33 0.23 0.5 2 0.18 0.08 1 Dimensions in mm Fig 8. Dimensions in mm 02-05-21 Package outline PESD5V0X1BQ (SOT663) 0.48 0.38 1.9 Fig 9. 0.15 0.09 04-11-04 Package outline PESD5V0X1BT (SOT23/TO-236AB) 10. Packing information Table 10. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package PESD5V0X1BQ SOT663 PESD5V0X1BT SOT23 [1] Description Packing quantity 3000 4000 8000 10000 2 mm pitch, 8 mm tape and reel - - -315 - 4 mm pitch, 8 mm tape and reel - -115 - - 4 mm pitch, 8 mm tape and reel -215 - - -235 For further information and the availability of packing methods, see Section 14. PESD5V0X1BQ_PESD5V0X1BT_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 30 October 2008 8 of 13 PESD5V0X1BQ; PESD5V0X1BT NXP Semiconductors Ultra low capacitance bidirectional ESD protection diodes 11. Soldering 2.45 1.9 1.6 solder lands 0.5 0.55 0.6 (3×) (3×) (3×) placement area 2 1 0.8 solder paste occupied area Dimensions in mm 1.65 0.5 (3×) 0.55 (3×) sot663_fr Reflow soldering is the only recommended soldering method. Fig 10. Reflow soldering footprint PESD5V0X1BQ (SOT663) 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste 0.6 (3×) 0.7 (3×) occupied area Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 11. Reflow soldering footprint PESD5V0X1BT (SOT23/TO-236AB) PESD5V0X1BQ_PESD5V0X1BT_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 30 October 2008 9 of 13 PESD5V0X1BQ; PESD5V0X1BT NXP Semiconductors Ultra low capacitance bidirectional ESD protection diodes 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 12. Wave soldering footprint PESD5V0X1BT (SOT23/TO-236AB) PESD5V0X1BQ_PESD5V0X1BT_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 30 October 2008 10 of 13 PESD5V0X1BQ; PESD5V0X1BT NXP Semiconductors Ultra low capacitance bidirectional ESD protection diodes 12. Revision history Table 11. Revision history Document ID Release date PESD5V0X1BQ_PESD5V0X1BT_1 20081030 Data sheet status Change notice Supersedes Product data sheet - - PESD5V0X1BQ_PESD5V0X1BT_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 30 October 2008 11 of 13 NXP Semiconductors PESD5V0X1BQ; PESD5V0X1BT Ultra low capacitance bidirectional ESD protection diodes 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. ESD protection devices — These products are only intended for protection against ElectroStatic Discharge (ESD) pulses and are not intended for any other usage including, without limitation, voltage regulation applications. NXP Semiconductors accepts no liability for use in such applications and therefore such use is at the customer’s own risk. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PESD5V0X1BQ_PESD5V0X1BT_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 30 October 2008 12 of 13 NXP Semiconductors PESD5V0X1BQ; PESD5V0X1BT Ultra low capacitance bidirectional ESD protection diodes 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 7 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Quality information . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information. . . . . . . . . . . . . . . . . . . . . . 8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 30 October 2008 Document identifier: PESD5V0X1BQ_PESD5V0X1BT_1