SANYO RD2003JN

RD2003JN
Ordering number : ENA1593
SANYO Semiconductors
DATA SHEET
RD2003JN
Diffused Junction Silicon Diode
Low VF • High-Speed Switching Diode
Features
•
•
•
•
•
High breakdown voltage (VRRM=300V).
High reliability.
Fast forward / reverse recovery time.
Low noise at the time of reverse recovery.
Attachment workability is good by Mica-less package.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Repetitive Peak Reverse Voltage
VRRM
Average Output Current
Surge Forward Current
IO
IF(RMS)
IFSM
Junction Temperature
Tj
Storage Temperature
Tstg
R.M.S Forward Current
Conditions
Ratings
50Hz sine wave 1 cycle
Unit
300
V
20
A
25
A
180
A
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Reverse Recovery Time
Thermal Resistance
Symbol
Conditions
VR
VF
IR
IR=1mA
IF=20A
trr1
IF=10A, di / dt=100A/μs
trr2
IF=0.5A, IR=1A
Rth(j-c)
Junction-Case : Smoothed DC
Ratings
min
typ
max
300
Unit
V
1.15
VR=300V
1.3
V
100
μA
60
ns
4.0
°C / W
20
ns
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"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
www.semiconductor-sanyo.com/network
O2809SA TK IM TC-00002161 No. A1593-1/3
RD2003JN
Package Dimensions
unit : mm (typ)
7525-003
10.0
4.5
3.2
3.6
16.0
7.2
3.5
2.8
1.6
14.0
1.2
0.75
1 2 3
0.7
2.4
1 : No Contact
2 : Cathode
3 : Anode
2.55
SANYO : TO-220ML(LS)
2.55
IF -- VF
100
Cj -- VR
7
f=100kHz
Junction Capacitance, Cj -- pF
5
°C
75
0.2
0.4
0.6
0.8
1.0
1.2
Forward Voltage, VF -- V
Surge Forward Current, IFSM(Peak) -- A
Current waveform 50Hz sine wave
180
IS
170
20ms
t
160
150
140
130
120
110
100
0.01
2
3
5
7
0.1
2
3
Time, t -- s
5
2
100
7
5
3
2
2
7
1.0
2
3
IT15108
3
5 7 1.0
2
3
5 7 10
2
3
5 7 100
IT15107
2 3
5 7 10
IT15109
Reverse Voltage, VR -- V
IT15106
IFSM -- t
190
3
10
0.1
1.4
Transient Thermal Resistance Rth(j-c) -- °C / W
0
--40°
C
0.01
0.001
25 °
C
20°
C
0.1
50
°C
10
0°C
1.0
Ta=
1
Forward Current, IF -- A
10
Rth(j-c) -- t
7
5
3
2
1.0
7
5
3
2
0.001 2 3
5 70.01
2 3
5 7 0.1
2 3
Time, t -- s
5 7 1.0
No. A1593-2/3
RD2003JN
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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This catalog provides information as of October, 2009. Specifications and information herein are subject
to change without notice.
PS No. A1593-3/3