RFMD RF2416PCBA

RF2416
Preliminary
4
DUAL-BAND 2.7V LOW NOISE AMPLIFIER
Typical Applications
• GSM/DCS Dual-Band Handsets
• General Purpose Amplification
• Cellular/PCS Dual-Band Handsets
• Commercial and Consumer Systems
The RF2416 is a dual-band low noise amplifier with
bypass switch designed for use as a front-end for
950MHz GSM and DCS1800/PCS1900 applications. It
may also be used for dual-band cellular/PCS application.
The 900MHz LNA is a single-stage amplifier with bypass
switch; the 1800/1900 LNA is a two-stage amplifier with
bypass switch. Both amplifiers have excellent noise figure
and high linearity in both high gain and bypass/low gain
mode. The device is packaged in a 3mmx3mm, 12 pin,
leadless chip carrier.
0.80
0.65
1.00
0.85
4
3.00
sq.
0.65
0.30
0.60
0.24 typ
2
GENERAL PURPOSE
AMPLIFIERS
Product Description
4 PLCS
0.30
0.18
1.25
sq.
0.95
0.75
0.50
12°
max
0.05
0.01
0.23
0.13
0.50
4 PLCS
Dimensions in mm.
NOTES:
1 Shaded Pin is Lead 1.
2 Dimension applies to plated terminal and is measured between 0.02 mm and
0.25 mm from terminal end.
Pin 1 identifier must exist on top surface of package by identification mark or
3
feature on the package body. Exact shape and size is optional.
4 Package Warpage: 0.05 mm max.
5 Die thickness allowable: 0.305 mm max.
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
ü
GaAs HBT
GaAs MESFET
SiGe HBT
Si CMOS
Package Style: LCC, 12-Pin, 3x3
Features
HB GND1
VCC1 HB
HB GND2
• Low Noise and High Intercept Point
12
11
10
HB IN 1
• Dual-Band Application GSM900 and
DCS1800/PCS1900
9 HB OUT
• Power Down Control
• Switchable Gain
Logic
Control
HB BIAS 2
8 HB SELECT
7 LB SELECT
4
5
6
LB IN
LB GND
LB OUT
LB BIAS 3
Functional Block Diagram
Rev A2 010810
Ordering Information
RF2416
RF2416 PCBA
Dual-Band 2.7V Low Noise Amplifier
Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
4-199
RF2416
Preliminary
Absolute Maximum Ratings
Parameter
Supply Voltage
Input RF Level
Storage Temperature
Parameter
Rating
Unit
-0.5 to +6.0
+10
-40 to +150
VDC
dBm
°C
Specification
Min.
Typ.
Max.
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Unit
Condition
Operating Range
GENERAL PURPOSE
AMPLIFIERS
4
Overall Frequency Range
Supply Voltage (VCC)
Power Down Voltage (VBIAS)
Logic Control Voltage Level
Operating Ambient Temperature
800
1800
2.7
2.7
0
-40
Input Impedance
Output Impedance
2.8
2.8
1000
2000
3.0
3.0
3.0
+85
MHz
MHz
V
V
V
oC
Ω
Ω
50
50
T = 25°C, RF=950MHz,
VCC1LB=VCC2LB=2.78V, LBSelect=0V,
ZIN =ZO =50Ω
950MHz Performance High Gain Mode
Gain
Gain Variation Over
Temperature Range
Gain Variation Over
Frequency Band
Noise Figure
Reverse Isolation
Input IP3
Input P1dB
Input VSWR
Output VSWR
Total Current Draw
14
15
+2.0
-12
15.5
1.1
21
+5.0
-9
4.8
17
+0.5
dB
dB
+0.5
dB
2.0
dB
dB
dBm
dB
2:1
2:1
6.0
mA
950MHz Performance Bypass Mode
Gain
Gain Reduction
Input IP3
Input P1dB
Input VSWR
Output VSWR
Total Current Draw
4-200
Low Band Operation
High Band Operation
VCC1 HB, VCC2 HB, VCC1 LB
HB BIAS, LB BIAS
HB SELECT, LB SELECT
-8
12.0
-1
-6
21.5
15.0
+2
-3
900MHz LNA ENABLED, 1900MHz LNA
DISABLED. ICC + IPD
T = 25°C, RF=950MHz,
VCC1LB=VCC2LB=2.78V, LBSelect=2.7V,
ZIN =ZO =50Ω
dB
dBc
dBm
dB
2.5:1
2:1
See Application Notes
Rev A2 010810
RF2416
Preliminary
Specification
Min.
Typ.
Max.
Unit
1850MHz Performance High Gain Mode
Gain
Gain Variation Over
Temperature Range
Gain Variation Over
Frequency Band
Noise Figure
Reverse Isolation
Input IP3
Input P1dB
Input VSWR
Output VSWR
Total Current Draw
T = 25°C, RF=1850MHz, VCC1HB=2.78V,
HBSelect=0V, ZIN =ZO =50Ω
15
15
-2.0
-13
17.5
1.5
20
+1.0
-10
8.2
19
+0.5
dB
dB
+0.5
dB
2.1
dB
dB
dBm
dB
2:1
2:1
10
mA
1850MHz Performance Bypass Mode
Gain
Gain Reduction
Input IP3
Input P1dB
Input VSWR
Output VSWR
Total Current Draw
AGC Settling Time
Rise and Fall Time
Rev A2 010810
Condition
-7
22
12.0
+5
-5
23
15.0
+8
-3
24
4
1900MHz LNA ENABLED, 900MHz LNA
DISABLED. ICC + IPD
T = 25°C, RF=1850MHz, VCC1HB=2.78V,
HBSelect=2.7V, ZIN =ZO =50Ω
dB
dBc
dBm
dB
2:1
2.5:1
See Applications Notes
10
10
µs
µs
4-201
GENERAL PURPOSE
AMPLIFIERS
Parameter
RF2416
Pin
1
Function
HB IN
Preliminary
Description
Interface Schematic
DCS1800/PCS1900 RF input pin.
To Bias VCC1 HB
Circuit
HB IN
HB GND1
2
HB BIAS
HB BIAS is set to the supply voltage at high gain mode. For bypass
mode see “Gain Select Possibility”.
HB VREF/P
3
LB BIAS
LB BIAS is set to the supply voltage at high gain mode. For bypass
mode see “Gain Select Possibility”.
LB VREF/PD
4
LB IN
GENERAL PURPOSE
AMPLIFIERS
4
GSM900 RF input pin.
To Bias
Circuit
LB OUT
LB IN
LB GND
5
LB GND
LNA emittance inductance. Total inductance is comprised of
package+bondwire+L2 on PCB.
6
LB OUT
7
LB SELECT
GSM900 Amplifier Output pin. This pin is an open-collector output. It
must be biased to VCC through a choke or matching inductor. This pin
is typically matched to 50Ω with a shunt bias/matching inductor and
series blocking/matching capacitor. Refer to application schematics.
This pin selects high gain and bypass for GSM900.
Select < 0.8V, high gain.
Select > 1.8V, low gain.
8
9
HB SELECT
HB OUT
This pin selects high gain and bypass for DCS1800/PCS1900.
Select < 0.8V, high gain.
Select > 1.8V, low gain.
DCS1800 Amplifier Output pin. This pin is an open-collector output. It
must be biased to VCC through a choke or matching inductor. This pin
is typically matched to 50Ω with a shunt bias/matching inductor and
series blocking/matching capacitor. Refer to application schematics.
LB SELECT
HB SELECT
HB OUT
HB GND2
4-202
Rev A2 010810
RF2416
Preliminary
Pin
10
Function
HB GND2
Description
11
VCC1 HB
Open collector for first stage LNA of DCS1800/PCS1900. It must be
biased to VCC through a choke or matching inductor.
Interface Schematic
LNA2 emittance inductance. Total inductance is comprised of
package+bondwire+L5 on PCB.
VCC1 HB
HB GND1
HB GND1
Rev A2 010810
4
LNA1 emittance inductance. Total inductance is comprised of
package+bondwire+L7 on PCB.
GENERAL PURPOSE
AMPLIFIERS
12
4-203
RF2416
Preliminary
Application Notes
Bypass Mode Configurations
The RF2416 may be placed into either high gain or bypass mode via the HB SELECT and LB SELECT pins for high
band and low band operation, respectively. The high gain state is selected by asserting the select pin for the appropriate
band to a voltage level of less than 0.8V. For Bypass operation, there are two possible methods for placing the RF2416
into this low gain state. The table below shows the two possible Bypass states for each mode.
RF2416 Bypass Mode Possibilities
Gain Select
(HB Mode)
HB BIAS (V)
VCC1_HB and
VCC2_HB (V)
Current (mA)
2.7
0
2.78
1.4
2.7
2.7
2.78
1.9
Gain Select
(LB Mode)
LB BIAS (V)
VCC1_LB (V)
Current (mA)
2.7
0
2.78
0.8
2.7
2.7
2.78
1.5
GENERAL PURPOSE
AMPLIFIERS
4
For both Bypass configurations, the select pin for the appropriate band must be placed at a level greater than or equal to
1.8V. The difference between the Bypass possibilities is determined by the specific application’s ability to change the
voltage of the bias pins independently of VCC. The advantage of the ability to assert the bias pins to 0V when in Bypass
mode is shown by the decreased current draw when in this Bypass configuration.
4-204
Rev A2 010810
RF2416
Preliminary
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
VCC1 HB
VCC1 HB
C14
100 pF
J1
HB IN
C1
33 nF
12
50 Ω µstrip
11
50 Ω µstrip
L4
3.3 nH
10
1
C11
0.1 µF
L5
1.0 nH
9
C10
0.7 pF
R1
0Ω
HB BIAS
Logic
Control
2
C2
0.1 µF
R2
0Ω
HB SELECT
C9
0.1 µF
7
5
C8
0.1 µF
6
LB SELECT
2416310, rev. 3
L3
8.2 nH
LB BIAS
R3
0Ω
L2
6.8 nH
50 Ω µstrip
J2
LB IN
8
3
4
C3
0.1 µF
50 Ω µstrip
J4
HB OUT
C5
0.1 µF
C7
2.0 pF
50 Ω µstrip
J3
LB OUT
C6
100 pF
C4
33 nF
VCC1 LB
P2
P1
P1-1
P1-3
1
HB BIAS
2
GND
3
LB BIAS
CON3
Rev A2 010810
P2-1
P2-3
P3
1
HB SELECT
2
GND
3
LB SELECT
CON3
P3-1
P3-3
1
VCC1 HB
2
GND
3
VCC1 LB
CON3
4-205
4
GENERAL PURPOSE
AMPLIFIERS
L1
47 nH
C13
0.1 µF
L6
3.3 nH
L7
1.0 nH
C12
100 pF
RF2416
Preliminary
Evaluation Board Layout
Board Size 2” x 2”
Board Thickness 0.060”, Board Material FR-4, Multi-Layer
GENERAL PURPOSE
AMPLIFIERS
4
4-206
Rev A2 010810
RF2416
Preliminary
Low Band Bypass Mode (S11)
1.0
0.8
2.
0
0.
4
4.0
5.0
3.0
4.0
5.0
0.2
0.2
10.0
3.0
4.0
5.0
2.0
1.0
0.8
0.6
0.4
0
0.2
10.0
10.0
4.0
5.0
3.0
2.0
1.0
0.8
0.6
0.4
0.2
0
10.0
10 MHz
10 MHz
-10.0
5.5 GHz
4 GHz
.4
-0
1.5 GHz
.0
-2
-1.0
Swp Max
6GHz
2.0
2.
0
0.6
0.8
1.0
1.0
0.6
Swp Max
6GHz
0.
4
0.
4
0
3.
4.0
5.0
0
3.
4.0
5.0
0.2
5 GHz
Swp Min
0.01GHz
Low Band High Gain Mode (S22)
Low Band High Gain Mode (S11)
0.8
-0.8
-0.
6
-2
Swp Min
0.01GHz
-1.0
-0.8
-0.
6
.0
.0
-3
4 GHz
0
3 GHz
-3
.
-4.
0
-5.0
950 MHz
.4
-0
-0.2
-4.
0
-5.0
4.5 GHz
-10.0
-0.2
950 MHz
5.5 GHz
10.0
0.2
1.5 GHz
.0
-2
.4
-0
-1.0
-0.8
-0.
6
Swp Min
0.01GHz
10.0
4.0
5.0
3.0
2.0
0.8
1.0
500 MHz
950 MHz
3.5 GHz
.0
-2
-1.0
-0.8
-0.
6
0.6
0.4
0
10.0
4.0
5.0
2.0
1.0
0.8
0.4
0.2
3.0
.0
2 GHz
-3
950 MHz
4.5 GHz
-0.2
.0
3 GHz
.4
-0
-4.
0
-5.0
500 MHz
10 MHz
-3
0.6
-10.0
3.5 GHz
-0.2
Rev A2 010810
5 GHz
-4.
0
-5.0
0
10 MHz
-10.0
4 GHz
0.2
10.0
Swp Min
0.01GHz
4-207
4
GENERAL PURPOSE
AMPLIFIERS
0.
4
0
3.
5 GHz
Swp Max
6GHz
0.6
2.
0
0.6
0.8
1.0
Low Band Bypass Mode (S22)
Swp Max
6GHz
RF2416
Preliminary
4
0.
4
0.8
0
3.
0
4.
5.0
0.2
4.0
5.0
0.
0
3.
Swp Max
6GHz
2.
0
2.0
6
0.
0.8
0.6
Swp Max
6GHz
1.0
High Band Bypass Mode (S22)
1.0
High Band Bypass Mode (S11)
0.2
10.0
4.0
5.0
3.0
.0
-2
1850 MHz
-1.0
-0
.6
Swp Min
0.01GHz
High Band High Gain Mode (S22)
Swp Max
6GHz
2.0
0.6
0.8
Swp Max
6GHz
2.0
1.0
High Band High Gain Mode (S11)
0.6
2.0
1.0
0.8
0.6
0.4
0.2
Swp Min
0.01GHz
-1.0
-0.8
1 GHz
0.8
4 GHz
.4
.0
-2
-0.
6
3 GHz
-0
1.0
.0
1.5 GHz
1 GHz
4.5 GHz
2
-0.
-0.8
-4.
0
-5.0
.4
-0
0
10.0
4.0
5.0
2.0
1.0
0.8
0.6
0.4
0.2
3.0
2 GHz
500 MHz
5 GHz
-3
-0.2
-10.0
0.
4
0.
4
0
3.
4.0
5.0
0
3.
4.0
5.0
0.2
0.2
10 MHz
10 MHz
2 GHz
2.5 GHz
10.0
4.0
5.0
3.0
2.0
4 GHz
1.0
0.8
0.6
0.4
0.2
10.0
0
10.0
4.0
5.0
3.0
2.0
1.0
0.8
0.6
0.4
0.2
0
10.0
4.5 GHz
3 GHz
-10.0
Swp Min
0.01GHz
.0
-2
1850 MHz
-0.
6
.0
-2
-
-1.0
-1.0
-0.8
-0.
6
1 GHz
4
0.
-0.8
.0
1.5 GHz
-3
-
3.5 GHz
.0
1 GHz
1850 MHz
4
0.
-0.2
-3
-4.
0
-5.0
4 GHz
-4.
0
-5.0
500 MHz
-0.2
-10.0
GENERAL PURPOSE
AMPLIFIERS
4 GHz
10 MHz
-3
.0
4
10 MHz
-4
.0
-5.
0
1850 MHz
10.0
-10.0
0
10.0
Swp Min
0.01GHz
S-Parameter Conditions:
All plots shown were taken at VCC =2.78V and Ambient Temperature=25°C.
Note:
All S11 and S22 plots shown were taken from an RF2416 while on a 2416310 evaluation board. The data was captured without the external input or output tuning components in place, and the reference point at the HB IN and HB OUT pins for high band and LB IN and LB
OUT for low band.
4-208
Rev A2 010810