RJJ0101DPD P Channel Power MOS FET High Speed Switching REJ03G1580-0200 Preliminary Rev.2.00 Nov 11, 2007 Features • VDSS : –12 V • RDS(on) : 38 mΩ(TYP) • ID : –5 A Outline RENESAS Package code: PRSS0004ZA-A (Package name: MP-3A) 3 4 12 3 1. 2. 3. 4. 1 2, 4 Application • Power management switching, etc. REJ03G1580-0200 Rev.2.00 Nov 11, 2007 Page 1 of 6 Gate Drain Source Drain RJJ0101DPD Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) Pch Note1 θch-c Tch Tstg Ratings –12 ±8 –5 –20 15 8.33 150 –55 to +150 Unit V V A A W °C/W °C °C Notes: 1. Value at Tc = 25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min. Typ. Max. Unit Drain to Source breakdown voltage V(BR)DSS –12 — — V ID = –10 mA, VGS = 0 V Gate to Source breakdown voltage Zero Gate voltage drain current Gate to Source leak current Gate to Source cutoff voltage V(BR)GSS ±8 — — V IG = ±100 µA, VGS = 0 V IDSS IGSS VGS(off) Static Drain to Source on state resistance RDS(on) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-Drain diode forward voltage Ciss Coss Crss td(on) tr td(off) tf VDF — — –0.3 — — — — — — — — — — — — — — 38 48 60 1380 235 115 35 150 490 350 -0.8 –1 ±10 –1.1 52 70 93 — — — — — — — –1.1 µA µA V mΩ mΩ mΩ pF pF pF ns ns ns ns V Notes: 2. Pulse test REJ03G1580-0200 Rev.2.00 Nov 11, 2007 Page 2 of 6 Conditions VDS = –12 V, VGS = 0 V VGS = ±6.4V, VDS = 0 V ID = –1 mA, VDS = –10 V ID = –1.5 A, VGS = –4.5 V Note2 ID = –1.5 A, VGS = –2.5 V Note2 ID = –1.5 A, VGS = –1.8 V Note2 VDS = –10 V VGS = 0 V f = 1 MHz VDD = –10 V ID = –1.5 A VGS = –4 V RGS = 4.7 Ω IS = –3 A, VGS = 0 V RJJ0101DPD Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area –100 Ta = 25°C 1 shot Pulse –12 100 150 limited by RDS(on) –1 –10 –100 Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics –16 –10 V –2.2 V –4.5 V –3 V –2.5 V –2 V VGS = –1.8 V –4 VDS = –10 V Pulse Test Pulse Test –2 –4 –6 –8 –12 –8 –4 75°C 25°C Tc = –25°C 0 0 –10 –1 –3 –2 –4 –5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current –250 Ta = 25°C –200 –4.0 A –150 –100 –1.5 A –50 –1.0 A 0 –2 –4 –6 –8 –10 Gate to Source Voltage VGS (V) REJ03G1580-0200 Rev.2.00 Nov 11, 2007 Page 3 of 6 Drain to Source On State Resistance RDS(on) (mΩ) Drain to Source Voltage VDS(on) (mV) Operation in –1 this area is Case Temperature Tc (°C) –8 0 s –0.1 –0.1 200 Drain Current ID (A) Drain Current ID (A) –16 50 m n tio 0 1 ra 4 = pe O 8 PW –10 µs 12 10 µs 0 10 Drain Current ID (A) 16 DC Channel Dissipation Pch (W) 20 1000 Pulse Test Ta = 25°C –2.5 V 100 VGS = –1.8 V –4.5 V 10 1 –0.1 –1 Drain Current ID (A) –10 RJJ0101DPD –4 A 100 –1.8 V 80 –1.5 A –4 A –1.5 A 60 –1 A –2.5 V 40 ID = –4 A, –1.5 A, –1 A 20 –25 10000 Capacitance C (pF) –1 A VGS = –4.5 V 0 25 50 75 100 125 150 30 10 Tc = –25°C 3 75°C 25°C 1 0.3 VDS = –10 V 0.1 –0.1 –0.3 –3 –1 Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage Dynamic Input Characteristics Ciss 1000 Coss 100 Crss 10 –2 –4 –6 –8 –10 0 ID = –3 A VDD = –10, –12 V –7 V –5 V –8 –5 V –4 –7 V –10 V VDD = –12 V –8 20 –16 10 Drain to Source Voltage VDS (V) Gate Charge Qg (nc) Switching Characteristics Reverse Drain Current vs. Source to Drain Voltage –16 Reverse Drain Current IDR (A) VGS = –4.5 V, VDD = –10 V td(off) tf tr 100 td(on) 10 –0.1 –1 Drain Current –10 ID (A) REJ03G1580-0200 Rev.2.00 Nov 11, 2007 Page 4 of 6 –10 0 0 –12 1000 Switching Time t (ns) Pulse Test Case Temperature Tc (°C) VGS = 0 f = 1 MHz 0 100 –100 Pulse Test –12 –5 V –8 VGS = 0, 5 V –4 Ta = 25°C 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage VSDF (V) Gate to Source Voltage VGS (V) Pulse Test Forward Transfer Admittance |yfs| (S) 120 Forward Transfer Admittance vs. Drain Current Drain to Source Voltage VDS (V) Drain to Source On State Resistance RDS(on) (mΩ) Static Drain to Source on State Resistance vs. Temperature RJJ0101DPD Normalized Transient Thermal Impedance θch-c (°C/W) Normalized Transient Thermal Impedance vs. Pulse Width 100 1shot pulse 10 1 0.1 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Vout Monitor Vin Monitor Switching Time Waveform Vin 10% D.U.T. RL Vin –4 V 50 Ω 90% Vout td(on) REJ03G1580-0200 Rev.2.00 Nov 11, 2007 Page 5 of 6 90% 90% VDD = –10 V 10% 10% tr td(off) tf RJJ0101DPD Package Dimensions Previous Code 0.76 ± 0.2 Unit: mm 2.3 0.5 ± 0.2 0.1 ± 0.1 2.5Min 1Max 6.1 ± 0.2 6.6 5.3 ± 0.2 MASS[Typ.] 0.32g 1.4 ± 0.2 RENESAS Code PRSS0004ZA-A 1 ± 0.2 JEITA Package Code SC-63 10.4Max Package Name MP-3A 0.76 0.5 ± 0.2 1 2.3 2.3 ± 0.2 Ordering Information Part No. RJJ0101DPD-00-J2 Quantity 3000 pcs REJ03G1580-0200 Rev.2.00 Nov 11, 2007 Page 6 of 6 Shipping Container Taping Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. 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