RJK0358DPA Silicon N Channel Power MOS FET Power Switching REJ03G1651-0400 Rev.4.00 Apr 10, 2008 Features • • • • • High speed switching Capable of 5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.6 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 6 7 8 D D D D 5 6 7 8 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 4 G S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C REJ03G1651-0400 Rev.4.00 Apr 10, 2008 Page 1 of 6 Symbol VDSS VGSS Ratings 30 ±20 Unit V V ID 38 152 38 19 36.1 45 2.78 150 –55 to +150 A A A A mJ W °C/W °C °C ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 θch-c Note3 Tch Tstg RJK0358DPA Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Notes: 4. Pulse test REJ03G1651-0400 Rev.4.00 Apr 10, 2008 Page 2 of 6 Min 30 — — 1.0 — — — — — — — — — — — — — Typ — — — — 2.6 3.8 50 4300 500 280 33 13 8 11 5.8 68 12 Max — ± 0.1 1 2.5 3.4 5.4 — — — — — — — — — — — Unit V µA µA V mΩ mΩ S pF pF pF nC nC nC ns ns ns ns — — 0.84 30 1.10 — V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 19 A, VGS = 10 V Note4 ID = 19 A, VGS = 5 V Note4 ID = 19 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 5 V ID = 38 A VGS = 10 V, ID = 19 A VDD ≅ 10 V RL = 0.53 Ω Rg = 4.7 Ω IF = 38 A, VGS = 0 Note4 IF =38 A, VGS = 0 diF/ dt = 100 A/ µs RJK0358DPA Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating ID (A) 1000 60 Drain Current Channel Dissipation Pch (W) 80 40 20 10 µs 100 Operation in 1 50 100 150 Case Temperature 0.1 1 shot Pulse 0.1 1 200 10 Drain to Source Voltage Tc (°C) 100 VDS (V) Typical Transfer Characteristics Typical Output Characteristics 50 50 Pulse Test 4.5 V 10 V 40 30 ID (A) 3.2 V 20 2.8 V VGS = 2.6 V 10 40 VDS = 10 V Pulse Test 30 3.0 V Drain Current ID (A) limited by RDS(on) Tc = 25°C 0 Drain Current 1 ms 10 20 10 25°C Tc = 75°C –25°C 0 2 4 6 Drain to Source Voltage 8 0 10 60 40 ID = 10 A 20 5A 2A 0 4 8 12 Gate to Source Voltage 16 20 VGS (V) REJ03G1651-0400 Rev.4.00 Apr 10, 2008 Page 3 of 6 3 4 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (mΩ) Drain to Source Saturation Voltage VDS (on) (mV) Pulse Test 2 Gate to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 80 1 100 Pulse Test 30 10 VGS = 5 V 3 10 V 1 1 3 10 30 Drain Current 100 ID 300 1000 (A) Static Drain to Source on State Resistance vs. Temperature Typical Capacitance vs. Drain to Source Voltage 10 10000 Pulse Test Ciss 3000 8 Capacitance C (pF) Static Drain to Source on State Resistance RDS (on) (mΩ) RJK0358DPA ID = 2 A, 5 A, 10 A 6 VGS = 5 V 4 2 2 A, 5 A, 10 A 10 V 0 –25 0 25 50 75 Tc Coss 300 Crss 100 30 10 0 100 125 150 Case Temperature 1000 (°C) 8 20 10 4 VDD = 25 V 10 V 0 0 20 40 Gate Charge 60 80 0 100 Qg (nc) Repetitive Avalanche Energy EAR (mJ) 50 IAP = 19 A VDD = 15 V duty < 0.1 % Rg ≥ 50 Ω 30 20 10 0 25 50 75 100 125 150 Channel Temperature Tch (°C) REJ03G1651-0400 Rev.4.00 Apr 10, 2008 Page 4 of 6 Pulse Test 10 V 40 5V 30 20 VGS = 0, –5 V 10 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Maximum Avalanche Energy vs. Channel Temperature Derating 40 50 Reverse Drain Current IDR (A) 12 VDS VGS (V) 16 VDD = 25 V 10 V Gate to Source Voltage VDS (V) Drain to Source Voltage 20 VGS 30 30 20 Reverse Drain Current vs. Source to Drain Voltage ID = 38 A 40 10 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 50 VGS = 0 f = 1 MHz RJK0358DPA Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θch – c (t) = γ s (t) • θch – c θch – c = 2.78°C/W, Tc = 25°C 0.1 0.05 0 0.03 .02 se ul p 1 0.0 hot s 1 0.01 10 µ D= PDM PW T PW T 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) Avalanche Test Circuit Avalanche Waveform EAR = L VDS Monitor 1 L • IAP2 • 2 VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg VDS VDD D. U. T ID Vin 15 V 50 Ω 0 VDD Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. Rg RL Vin Vout Vin 10 V 10% 10% 10% VDS = 10 V 90% td(on) REJ03G1651-0400 Rev.4.00 Apr 10, 2008 Page 5 of 6 tr 90% td(off) tf RJK0358DPA Package Dimensions JEITA Package Code − RENESAS Code PWSN0008DA-A Previous Code WPAKV MASS[Typ.] 0.075g 0.8Max 5.1 ± 0.2 Unit: mm 0.5 ± 0.15 Package Name WPAK 4.21Typ 1.27Typ +0.1 -0.2 5.9 3.8 ± 0.2 +0.1 -0.3 6.1 3.9 ± 0.2 0.05Max 0Min Stand-off 1.27Typ 0.2Typ 0.5 ± 0.15 0.635Max 0.7Typ 0.04Min 0.4 ± 0.06 4.9 ± 0.1 (Ni/Pd/Au plating) Notice:The reverse pattern of die-pad support lead described above exists. Ordering Information Part No. RJK0358DPA-00-J0 Quantity 2500 pcs REJ03G1651-0400 Rev.4.00 Apr 10, 2008 Page 6 of 6 Shipping Container Taping Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. 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