Preliminary Datasheet RJP4009ANS R07DS0370EJ0200 Rev.2.00 Apr 27, 2011 Nch IGBT for Strobe Flash Features • • • • • • Small surface mount package (VSON-8) VCES: 400 V ICM: 150 A @Tc = 70°C, CM = 400 μF Drive voltage: 2.5 V to 6 V (MAX) Pb-free Halogen-free Outline RENESAS Package code: PVSN0008JA-A (Package name: VSON-8<TNP-8DBV>) 5 8 7 6 5 1 2 3 4 1, 2, 3 : Emitter 4 : Gate 5, 6, 7, 8 : Collector 8 4 1 Applications Strobe flash for cameras Maximum Ratings (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Collector current (Pulse) Power dissipation Junction temperature Storage temperature R07DS0370EJ0200 Rev.2.00 Apr 27, 2011 Symbol VCES VGES ICM Ratings 400 ±6 150 Unit V V A Pj Tj Tstg 1.8 –40 to +150 –40 to +150 W °C °C Conditions VGE = 0 V VCE = 0 V CM = 400 μF (see performance curve) Page 1 of 4 RJP4009ANS Preliminary Electrical Characteristics (Tj = 25°C) Parameter Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Symbol ICES IGES VGE(th) VCE(sat) Cies Min. — — 0.4 — — Typ. — — 0.6 4.0 5500 Max. 1 ±10 1.2 9.0 — Unit μA μA V V pF Test conditions VCE = 400 V, VGE = 0 V VGE = ±6 V, VCS = 0 V VCE = 10 V, IC = 1 mA IC = 150 A, VGE = 2.5 V VCE = 25 V, VGE = 0 V, f = 1 MHz Performance Curves Maximum Pulse Collector Current (Conductive Capability in Strobe Flash Circuit) Pulse Collector Current ICM (A) 200 150 100 50 0 0 1 2 3 4 5 6 7 Gate - Emitter Voltage VGE (V) R07DS0370EJ0200 Rev.2.00 Apr 27, 2011 Page 2 of 4 RJP4009ANS Preliminary Application Example VCM Maximum Operation Conditions Trigger Transformer VCM ICP Xe Tube CM VGE CM + – 8 7 6 5 IGBT driver 1 2 3 4 Precautions on Usage 1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the device from electrostatic charge. 2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And turn-off dv/dt must become less than 400 V/ μs. In general, when RG (off) = 30 Ω, it is satisfied. 3. The operation life should be endured until repeated discharge of 5,000 times under the charge current (IXe ≤ 150 A : full luminescence condition) of main capacitor. Repetition period under full luminescence condition is over 3 seconds. R07DS0370EJ0200 Rev.2.00 Apr 27, 2011 Page 3 of 4 RJP4009ANS Preliminary Package Dimensions Package Name VSON-8 JEITA Package Code P-VSON8-3x4.4-0.65 RENESAS Code PVSN0008JA-A Previous Code TNP-8DBV MASS[Typ.] 0.032g D LP L1 1.95 ± 0.1 E HE 0.15Max Reference Symbol c A D E A b e LP e b x x y c HE M y L1 Dimension in Millimeters Min 2.90 4.30 Nom 3.00 4.40 0.25 0.30 0.65 0.35 0.09 4.70 0.10 0.15 4.80 0.20 Max 3.10 4.50 0.95 0.40 0.08 0.10 0.25 4.90 0.30 Ordering Information Orderable Part No. RJP4009ANS-01-Q6 R07DS0370EJ0200 Rev.2.00 Apr 27, 2011 Quantity 3000 pcs Shipping Container Taping Page 4 of 4 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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