Preliminary Datasheet RJP60V0DPM-80 600V - 22A - IGBT Application: Inverter R07DS1036EJ0100 Rev.1.00 Mar 01, 2013 Features High breakdown-voltage Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) Short circuit withstand time (6 s typ.) Trench gate and thin wafer technology (G6H series) Outline RENESAS Package code: PRSS0003ZD-A (Package name: TO-3PF) C 1. Gate 2. Collector 3. Emitter G E 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Symbol VCES / VR VGES IC IC IC(peak) Note1 PC Note2 Note2 j-c Tj Tstg Ratings 600 ±30 45 22 90 60 2.08 150 –55 to +150 Unit V V A A A W °C/ W °C °C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C R07DS1036EJ0100 Rev.1.00 Mar 01, 2013 Page 1 of 7 RJP60V0DPM-80 Preliminary Electrical Characteristics (Ta = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Switching time Short circuit withstand time Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf tsc Min — — 5.5 — — — — — — — — — — — — — Typ — — — 1.5 1.9 1080 58 42 75 10 45 45 40 100 70 6 Max 1 ±1 7.5 2.1 — — — — — — — — — — — — Unit A A V V V pF pF pF nC nC nC ns ns ns ns s Test Conditions VCE = 600 V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 22 A, VGE = 15 V Note3 IC = 45 A, VGE = 15 V Note3 VCE = 25 V VGE = 0 f = 1 MHz VGE = 15 V VCE = 300 V IC = 22 A VCE = 300 V, VGE = 15 V IC = 22 A Rg = 5 Inductive load VCC 360 V , VGE = 15 V Tc = 100 C Notes: 3. Pulse test. R07DS1036EJ0100 Rev.1.00 Mar 01, 2013 Page 2 of 7 RJP60V0DPM-80 Preliminary Main Characteristics Turn-off Safe Operation Area Maximum Safe Operation Area 50 100 PW =1 0μ 10 s 0μ 10 Collector Current IC (A) Collector Current IC (A) 1000 s 1 0.1 40 30 20 10 Tc = 25°C Single pulse 0.01 1 Tc = 25°C Single pulse 10 100 0 1 1000 1000 Collector to Emitter Voltage VCE (V) Typical Output Characteristics Typical Output Characteristics 100 Ta = 25°C Pulse Test Collector Current IC (A) 13 V 80 60 12 V 40 11 V 10 V 20 9V VGE = 8 V 0 1 Ta = 150°C Pulse Test 15 V 14 V 2 3 4 15 V 14 V 80 13 V 60 12 V 11 V 40 10 V 20 0 5 9V VGE = 8 V 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) 6 Ta = 25°C Pulse Test 5 4 3 IC = 45 A 2 22 A 1 8 10 12 14 16 18 20 Gate to Emitter Voltage VGE (V) R07DS1036EJ0100 Rev.1.00 Mar 01, 2013 Collector to Emitter Saturation Voltage VCE(sat) (V) Collector Current IC (A) Collector to Emitter Saturation Voltage VCE(sat) (V) 100 Collector to Emitter Voltage VCE (V) 100 0 10 6 Ta = 150°C Pulse Test 5 4 3 IC = 45 A 2 22 A 1 8 10 12 14 16 18 20 Gate to Emitter Voltage VGE (V) Page 3 of 7 RJP60V0DPM-80 Preliminary Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical) Collector to Emitter Saturation Voltage VCE(sat) (V) Typical Transfer Characteristics Collector Current IC (A) 100 Tc = –25°C 25°C 80 75°C 125°C 60 40 20 VCE = 10 V Pulse Test 0 4 6 8 10 12 14 16 4 VGE = 15 V Pulse Test 3 IC = 45 A 2 22 A 3A 1 0 −25 25 50 75 100 125 150 Junction Temparature Tj (°C) Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage vs. Junction Temparature (Typical) Typical Capacitance vs. Collector to Emitter Voltage 10000 10 VCE = 10 V Pulse Test 8 Capacitance C (pF) Gate to Emitter Cutoff Voltage VGE(off) (V) 0 IC = 10 mA 6 1 mA 4 2 0 −25 Cies 1000 100 Coes 10 1 0 25 50 75 0 100 125 150 Junction Temparature Tj (°C) Cres VGE = 0 V f = 1 MHz Ta = 25°C 50 100 150 200 250 300 Collector to Emitter Voltage VCE (V) 800 16 VGE VCC = 400 V 300 V 600 12 400 8 VCC = 400 V 300 V 200 4 VCE 0 0 IC = 22 A Ta = 25°C 20 40 60 80 0 100 Gate to Emitter Voltage VGE (V) Collector to Emitter Voltage VCE (V) Dynamic Input Characteristics (Typical) Gate Charge Qg (nc) R07DS1036EJ0100 Rev.1.00 Mar 01, 2013 Page 4 of 7 RJP60V0DPM-80 Preliminary Switching Characteristics (Typical) (2) Switching Characteristics (Typical) (1) 1000 Swithing Energy Losses E (μJ) 10000 Switching Time t (ns) VCC = 300 V, VGE = 15 V Rg = 5 Ω, Ta = 25 °C tf 100 td(off) td(on) 10 tr 1 VCC = 300 V, VGE = 15 V Rg = 5 Ω, Ta = 25 °C Eon 1000 Eoff 100 10 1 10 100 1 Switching Characteristics (Typical) (4) Switching Characteristics (Typical) (3) 1000 10000 VCC = 300 V, VGE = 15 V IC = 22 A, Ta = 25 °C Swithing Energy Losses E (μJ) Switching Time t (ns) 100 Collector Current IC (A) (Inductive load) Collector Current IC (A) (Inductive load) tf td(off) 100 td(on) tr 10 VCC = 300 V, VGE = 15 V IC = 22 A, Ta = 25 °C 1000 Eon Eoff 100 1 10 1 100 Switching Characteristics (Typical) (5) 100 Switching Characteristics (Typical) (6) 10000 Swithing Energy Losses E (μJ) 1000 VCC = 300 V, VGE = 15 V IC = 22 A, Rg = 5 Ω tf 100 td(off) td(on) tr 10 25 10 Gate Registance Rg (Ω) (Inductive load) Gate Resistance Rg (Ω) (Inductive load) Switching Time t (ns) 10 50 75 100 125 Case Temperature Tc (°C) (Inductive load) R07DS1036EJ0100 Rev.1.00 Mar 01, 2013 150 VCC = 300 V, VGE = 15 V IC = 22 A, Rg = 5 Ω 1000 Eon Eoff 100 25 50 75 100 125 150 Case Temperature Tc (°C) (Inductive load) Page 5 of 7 RJP60V0DPM-80 Preliminary Thermal Impedance vs. Pulse Width Thermal Impedance θj – c (°C/W) 10 Tc = 25°C 1 D=1 0.5 θj – c(t) = γs (t) • θj – c θj – c = 2.08 °C/W, Tc = 25°C 0.2 0.1 5 0 0.1 .0 2 0.0 PDM 0.01 1 shot pulse 0.01 10 μ D= PW T PW T 100 μ 1m 10 m Pulse Width 100 m 10 1 100 PW (s) Waveform Switching Time Test Circuit 90% Diode clamp/ D.U.T VGE L 90% IC Rg D.U.T/ Driver 10% 10% 1% 10% td(on) VCC 90% tr td(off) tf ttail ton toff VCE 10% R07DS1036EJ0100 Rev.1.00 Mar 01, 2013 Page 6 of 7 RJP60V0DPM-80 Preliminary Package Dimension Previous Code TO-3PFS RENESAS Code PRSS0003ZD-A 15.5 ± 0.2 Unit: mm 5.5 ± 0.2 3.6 ± 0.2 3.0 ± 0.2 10.0 ± 0.2 24.5 ± 0.2 4.5 ± 0.2 2.0 ± 0.2 43.8 ± 0.2 MASS[Typ.] 5.5g 23.0 ± 0.2 JEITA Package Code 26.5 ± 0.2 Package Name TO-3PF 2.0 ± 0.2 4.0 ± 0.2 2.0 ± 0.2 +0.2 0.1 14.8 ± 0.2 0.75 3.3 ± 0.2 +0.2 0.9 0.1 5.45 typ. 5.45 typ. 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