DIODES SBR3U100LP-7

SBR3U100LP
3A SBR®
SUPER BARRIER RECTIFER
NEW PRODUCT
Features
•
•
•
•
•
•
•
Mechanical Data
•
•
Ultra Low Forward Voltage Drop
Superior Reverse Avalanche Capability
Patented Super Barrier Rectifier Technology
Soft, Fast Switching Capability
150ºC Operating Junction Temperature
Lead Free Finish, RoHS Compliant (Note 1)
“Green” Molding Compound Device (Note 2)
Case: DFN3030-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish – NiPdAu annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.0172 grams (approximate)
•
•
•
•
•
C
C
C
C
C = CATHODE
A = ANODE
A
Bottom View
Maximum Ratings
A
A
A
Device Schematic
@TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Symbol
VRRM
VRWM
VRM
VR(RMS)
IO
Value
Unit
100
V
70
3.0
V
A
IFSM
32
A
Symbol
Value
Unit
RθJA
61
°C/W
TJ, TSTG
-65 to +150
°C
Thermal Characteristics
Characteristic
Maximum Thermal Resistance
Thermal Resistance Junction to Ambient (Note 3) TA = 25ºC
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
@TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
V(BR)R
100
-
-
V
Forward Voltage
VF
-
0.44
0.67
0.42
0.58
0.48
0.71
0.45
0.61
V
Reverse Current (Note 4)
IR
-
16
3
200
15
µA
mA
Reverse Breakdown Voltage (Note 4)
Notes:
Test Condition
IR = 1mA
IF = 1.0A, TJ = 25ºC
IF = 3.0A, TJ = 25ºC
IF = 1.0A, TJ = 125ºC
IF = 3.0A, TJ = 125ºC
VR = 100V, TJ = 25ºC
VR = 100V, TJ = 125ºC
1. RoHS revision 13.2.2003. High temperature solder exemption applied, see EU Directive Annex Note 7.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php
3. Device mounted on Polyimide substrate, 2 oz. Copper, 75mm2 pad area, double side PCB.
4. Short duration pulse test used to minimize self-heating effect.
SBR is a registered trademark of Diodes Incorporated.
SBR3U100LP
Document number: DS30998 Rev. 4 - 2
1 of 3
www.diodes.com
March 2008
© Diodes Incorporated
IF, INSTANTANEOUS FORWARD CURRENT (mA)
SBR3U100LP
Pd, POWER DISSIPATION (W)
2.0
1.5
1.0
0.5
0
IR, INSTANTANEOUS REVERSE CURRENT (mA)
0
5
1
2
3
4
IF(AV), AVERAGE FORWARD CURRENT (A)
Fig. 1 Forward Power Dissipation
10
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
10,000
1
1,000
0.1
100
0.01
0.001
0
10
0.1
25
50
75
100
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 3 Typical Reverse Characteristics
3.5
1
10
100
150
TA,DERATED AMBIENT TEMPERATURE (°C)
IF(AV), AVERAGE FORWARD CURRENT (A)
NEW PRODUCT
2.5
135
3.0
120
2.5
105
2.0
1.5
1.0
0.5
90
75
60
45
30
15
0
0
0
25
50
75
100
125
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 Forward Current Derating Curve
150
SBR is a registered trademark of Diodes Incorporated.
SBR3U100LP
Document number: DS30998 Rev. 4 - 2
2 of 3
www.diodes.com
0
30
60 90 120 150 180 210 240 270 300
VR, DC REVERSE VOLTAGE (V)
Fig. 6 Operating Temperature Derating
March 2008
© Diodes Incorporated
SBR3U100LP
Ordering Information
(Note 6)
Part Number
SBR3U100LP-7
NEW PRODUCT
Notes:
Case
DFN3030-8
Packaging
3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
DFN3030-8
3U10
3U10 = Product marking code
YYWW = Date code marking
YY = Last digit of year ex: 06 for 2006
WW = Week code 01 to 52
Package Outline Dimensions
DFN3030-8
Dim Min Max Typ
A
0.57 0.63 0.60
A1
0
0.05 0.02
A3
0.15
⎯
⎯
b
0.29 0.39 0.34
D
2.90 3.10 3.00
D2 2.19 2.39 2.29
e
0.65
⎯
⎯
E
2.90 3.10 3.00
E2
1.64 1.84 1.74
L
0.30 0.60 0.45
All Dimensions in mm
A
A3
SEATING PLANE
A1
SIDE VIEW
e
b
0
.20
R0
E
E2
L
SIDE VIEW
D2
D
BOTTOM VIEW
Suggested Pad Layout
Z
Dimensions
G1
G2
X
X1
Z
X
Value (in mm)
0.65
0.39
2.49
0.65
2.59
X1
G2
G1
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
SBR is a registered trademark of Diodes Incorporated.
SBR3U100LP
Document number: DS30998 Rev. 4 - 2
3 of 3
www.diodes.com
March 2008
© Diodes Incorporated