DAESAN SBR8100

CURRENT 8.0Amperes
VOLTAGE 20 to 100 Volts
SBR820 THRU SBR8100
Features
· Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
· Metal silicon junction, majority carrier conduction
· Guard ring for overvoltage protection
· Low power loss, high efficiency
· High current capability, Low forward voltage drop
· Single rectifier construction
· High surge capability
· For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
· High temperature soldering guaranteed :
250℃/10 seconds, 0.25" (6.35mm) from case
TO-220A
.180
3.8 f +.2
HOLE THRU (4.6)
.412
(10.5)
MAX.
.108
(2.75)
.248
(6.3) .595
(15.1)
MAX.
.040
(1.0)
MAX.
.550
.158 (14.0)
(4.0) MIN.
MAX.
.051 MAX.
(1.3)
.040 MAX.
(1.0)
Mechanical Data
PIN 1
· Case : JEDEC TO-220A molded plastic body
· Terminals: Lead solderable per
MIL-STD-750, Method 2026
· Polarity: As marked
· Mounting Position: Any
· Weight: 0.08ounce, 2.24 grams
.050
(1.27)
+
.200
(5.08)
PIN 1
+
.120
(3.05)
+
CASE
PIN 2
Case Negative
Suffix "R"
CASE
PIN 2
Case Positive
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive
load. For capacitive load, derate by 20%)
SBR
830
SBR
8100
100
Units
60
SBR
880
80
SBR
850
50
SBR
860
30
SBR
840
40
Maximum repetitive peak reverse voltage
VRRM
SBR
820
20
Maximum RMS voltage
VRMS
14
21
28
35
42
56
70
Volts
Maximum DC blocking voltage
VDC
20
30
40
50
60
80
100
Volts
Maximum average forward rectified current
(see Fig. 1)
I(AV)
8.0
Amps
Repetitive peak forward current(square wavr,
20KHZ) at Tc=105℃
IFRM
16.0
Amps
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
IFSM
150.0
Amps
Maximum instantaneous forward voltage
at 8.0A (Note 1)
VF
Maximum instantaneous reverse
current at rated DC blocking
voltage (Note1)
IR
Symbols
TA=25℃
TA=125℃
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
Notes:
(1) Pulse test: 300μS pulse width, 1% duty cycle
(2) Thermal resistance from junction to case
0.65
0.75
0.80
0.85
Volts
Volts
1.0
15
RθJC
TJ
TSTG
50
℃/W
2.5
-65 to +125
-65 to +150
-65 to +150
mA
℃
℃
RATINGS AND CHARACTERISTIC CURVES SBR820-SBR8100
FIG.2-TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
40
10
── SBR820-SBR840
- - - SBR850-SBR8100
8.0
INSTANTANEOUS FORWARD CURRENT (AMPERES)
AVERAGE FORWARD CURRENT
AMPERES
FIG.1-FORWARD CURRENT DERATING CURVE
6.0
4.0
SINGLE PHASE
HALF WAVE 50Hz
INDUCTIVE OR
RESISTIVE LOAD
2.0
0
0
50
100
LEAD TEMPERATURE (℃)
150
FIG.4-TYPICAL JUNCTION CAPACITANCE
SBR820-SBR840
SBR850-SBR8100
1.0
TJ=25℃
PLUS WIDTH=300㎲
1% DUTY CYCLE
0.1
4000
2
CAPACITANCE(pF)
3
── SBR820-SBR840
- - - SBR850-SBR8100
2000
4
5
6
7
8
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
1000
FIG.3-TYPICAL REVERSE CHARACTERISTICS
10
200
TC=150℃
100
0.1
0.4
1.0
10
40 60
100
INSTANTANEOUS REVERSE CURRENT MILL (AMPERES)
REVERSE VOLTAGE. VOLTS
FIG.5-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
PEAK FORWARD SURGE
CURRENT(AMPERES)
150
145
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
140
135
TC=125℃
1.0
TC=75℃
0.1
TC=25℃
0.01
130
125
── SBR820-SBR840
- - - SBR850-SBR8100
1.0
2.0
5.0
10
20
50
100
0.001
20
40
60
80
100
120
NUMBER OF CYCLES AT 60Hz
PERCENT OF RATED PEAK REVERSE VOLTAGE(VOLTS)
140
9
10