Previous Datasheet Index Next Data Sheet Bulletin I2066/B SD303C..C SERIES Hockey Puk Version FAST RECOVERY DIODES Features High power FAST recovery diode series 350A 1.0 to 2.0 µs recovery time High voltage ratings up to 2500V High current capability Optimized turn on and turn off characteristics Low forward recovery Fast and soft reverse recovery Press-puk encapsulation Case style conform to JEDEC DO-200AA Maximum junction temperature 125°C Typical Applications Snubber diode for GTO case style DO-200AA High voltage free-wheeling diode Fast recovery rectifier applications Major Ratings and Characteristics Parameters SD303C..C Units 350 A 55 °C 550 A 25 °C @ 50Hz 5770 A @ 60Hz 6040 A @ 50Hz 166 KA2s @ 60Hz 152 KA2s VRRM range 400 to 2500 V trr 1.0 to 2.0 µs 25 °C IF(AV) @ Ths IF(RMS) @ Ths IFSM I2t range @ TJ TJ - 40 to 125 °C D-655 To Order Previous Datasheet Index Next Data Sheet SD303C..C Series ELECTRICAL SPECIFICATIONS Voltage Ratings Type number SD303C..S10C SD303C..S15C SD303C..S20C Voltage V RRM max. repetitive VRSM , maximum non- I RRM max. Code peak and off-state voltage V repetitive peak voltage V TJ = 125°C mA 04 400 500 08 800 900 10 1000 1100 12 1200 1300 14 1400 1500 16 1600 1700 20 2000 2100 25 2500 2600 35 12 Forward Conduction Parameter I F(AV) Max. average forward current @ Heatsink temperature SD303C..C Units 350(175) A 180° conduction, half sine wave. Conditions 55(75) °C Double side (single side) cooled I F(RMS) Max. RMS current 550 A @ 25°C heatsink temperature double side cooled I FSM Max. peak, one-cycle 5770 t = 10ms No voltage non-repetitive forward current 6040 t = 8.3ms reapplied t = 10ms 100% VRRM A 4850 I2 t Maximum I2t for fusing 5080 t = 8.3ms reapplied Sinusoidal half wave, 166 t = 10ms No voltage Initial TJ = TJ max. t = 8.3ms reapplied 152 I 2 √t Maximum I2√t for fusing KA2s 117 t = 10ms 100% VRRM 107 t = 8.3ms reapplied 1660 V F(TO)1 Low level of threshold voltage 1.14 V F(TO) 2 High level of threshold voltage 1.63 rf1 Low level of forward slope resistance 1.14 rf2 High level of forward slope resistance 0.77 V FM Max. forward voltage 2.26 KA2√s V mΩ V t = 0.1 to 10ms, no voltage reapplied (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max. (I > π x IF(AV)), TJ = TJ max. (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max. (I > π x IF(AV)), TJ = TJ max. I = 1100A, TJ = 25°C, t = 10ms sinusoidal wave pk p Recovery Characteristics Code Test conditions TJ = 25 oC typical t rr I pk @ 25% IRRM Square Pulse (µs) (A) S10 1.0 S15 1.5 S20 2.0 750 di/dt Max. values @ TJ = 125 °C V r t rr Q rr I rr @ 25% IRRM (A/µs) 25 (V) -30 2222222222222 (µs) (µC) (A) 2.4 52 33 2.9 90 44 3.2 107 46 D-656 To Order Previous Datasheet Index Next Data Sheet SD303C..C Series Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Fig. 5 - Forward Power Loss Characteristics Fig. 6 - Forward Power Loss Characteristics Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled D-659 To Order Previous Datasheet Index Next Data Sheet SD303C..C Series Fig. 10 - Thermal Impedance ZthJ-hs Characteristic Fig. 9 - Forward Voltage Drop Characteristics Fig. 11 - Typical Forward Recovery Characteristics Fig. 12 - Recovery Time Characteristics Fig. 13 - Recovery Charge Characteristics D-660 To Order Fig. 14 - Recovery Current Characteristics Previous Datasheet Index Next Data Sheet SD303C..C Series Fig. 15 - Recovery Time Characteristics Fig. 16 - Recovery Charge Characteristics Fig. 17 - Recovery Current Characteristics Fig. 18 - Recovery Time Characteristics Fig. 19 - Recovery Charge Characteristics Fig. 20 - Recovery Current Characteristics Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics D-661 To Order Previous Datasheet Index SD303C..C Series Fig. 22 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 23 - Maximum Total Energy Loss Per Pulse Characteristics D-662 To Order Next Data Sheet Previous Datasheet Index Next Data Sheet SD303C..C Series Thermal and Mechanical Specifications Parameter SD303C..C TJ Max. operating temperature range -40 to 125 T Max. storage temperature range -40 to 150 stg RthJ-hs Max. thermal resistance, DC operation single side cooled K/W 0.08 Mounting force, ± 10% wt Conditions °C 0.16 junction to heatsink F Units DC operation double side cooled 4900 N (500) (Kg) Approximate weight 70 g Case style DO-200AA See Outline Table ∆RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Single Side Double Side Single Side Double Side 180° 0.010 0.011 0.008 0.008 120° 0.012 0.013 0.013 0.013 90° 0.016 0.016 0.018 0.018 60° 0.024 0.024 0.025 0.025 30° 0.042 0.042 0.042 0.042 Units Conditions K/W TJ = TJ max. 23 Ordering Information Table Device Code SD 30 3 C 1 2 3 4 25 S20 5 1 - Diode 2 - Essential part number 3 - 3 = Fast recovery 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = V RRM (see Voltage Ratings table) 6 - trr code (see Recovery Characteristics table) 7 - C = Puk Case DO-200AA D-657 3333 To Order 6 C 7 Previous Datasheet Index Next Data Sheet SD303C..C Series 4 2 ( 1 .6 5 ) D IA . M A X . Outline Table 3.5(0.14) ± 0.1(0.004) DIA. NOM.x 1.8 (0.07) DEEP MIN. BOTH ENDS 12 0.3 (0.01) MIN. BOTH ENDS 1 4 .4 (0 .5 7 ) TWO PLACES 38 (1.50) DIA. MAX. 1 3 .7 (0 .54 ) 19(0.75) DIA. MAX. Case Style DO-200AA All dimensions in millimeters (inches) 2222222222222 Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics D-658 To Order