IRF SD303C14S15C

Previous Datasheet
Index
Next Data Sheet
Bulletin I2066/B
SD303C..C SERIES
Hockey Puk Version
FAST RECOVERY DIODES
Features
High power FAST recovery diode series
350A
1.0 to 2.0 µs recovery time
High voltage ratings up to 2500V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Press-puk encapsulation
Case style conform to JEDEC DO-200AA
Maximum junction temperature 125°C
Typical Applications
Snubber diode for GTO
case style DO-200AA
High voltage free-wheeling diode
Fast recovery rectifier applications
Major Ratings and Characteristics
Parameters
SD303C..C
Units
350
A
55
°C
550
A
25
°C
@ 50Hz
5770
A
@ 60Hz
6040
A
@ 50Hz
166
KA2s
@ 60Hz
152
KA2s
VRRM range
400 to 2500
V
trr
1.0 to 2.0
µs
25
°C
IF(AV)
@ Ths
IF(RMS)
@ Ths
IFSM
I2t
range
@ TJ
TJ
- 40 to 125
°C
D-655
To Order
Previous Datasheet
Index
Next Data Sheet
SD303C..C Series
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
SD303C..S10C
SD303C..S15C
SD303C..S20C
Voltage
V RRM max. repetitive
VRSM , maximum non-
I RRM max.
Code
peak and off-state voltage
V
repetitive peak voltage
V
TJ = 125°C
mA
04
400
500
08
800
900
10
1000
1100
12
1200
1300
14
1400
1500
16
1600
1700
20
2000
2100
25
2500
2600
35
12
Forward Conduction
Parameter
I F(AV)
Max. average forward current
@ Heatsink temperature
SD303C..C
Units
350(175)
A
180° conduction, half sine wave.
Conditions
55(75)
°C
Double side (single side) cooled
I F(RMS) Max. RMS current
550
A
@ 25°C heatsink temperature double side cooled
I FSM
Max. peak, one-cycle
5770
t = 10ms
No voltage
non-repetitive forward current
6040
t = 8.3ms
reapplied
t = 10ms
100% VRRM
A
4850
I2 t
Maximum I2t for fusing
5080
t = 8.3ms
reapplied
Sinusoidal half wave,
166
t = 10ms
No voltage
Initial TJ = TJ max.
t = 8.3ms
reapplied
152
I 2 √t
Maximum I2√t for fusing
KA2s
117
t = 10ms
100% VRRM
107
t = 8.3ms
reapplied
1660
V F(TO)1 Low level of threshold voltage
1.14
V F(TO) 2 High level of threshold voltage
1.63
rf1
Low level of forward slope resistance
1.14
rf2
High level of forward slope resistance
0.77
V FM
Max. forward voltage
2.26
KA2√s
V
mΩ
V
t = 0.1 to 10ms, no voltage reapplied
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
(I > π x IF(AV)), TJ = TJ max.
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
(I > π x IF(AV)), TJ = TJ max.
I = 1100A, TJ = 25°C, t = 10ms sinusoidal wave
pk
p
Recovery Characteristics
Code
Test conditions
TJ = 25 oC
typical t
rr
I
pk
@ 25% IRRM
Square Pulse
(µs)
(A)
S10
1.0
S15
1.5
S20
2.0
750
di/dt
Max. values @ TJ = 125 °C
V
r
t
rr
Q
rr
I
rr
@ 25% IRRM
(A/µs)
25
(V)
-30
2222222222222
(µs)
(µC)
(A)
2.4
52
33
2.9
90
44
3.2
107
46
D-656
To Order
Previous Datasheet
Index
Next Data Sheet
SD303C..C Series
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
D-659
To Order
Previous Datasheet
Index
Next Data Sheet
SD303C..C Series
Fig. 10 - Thermal Impedance ZthJ-hs Characteristic
Fig. 9 - Forward Voltage Drop Characteristics
Fig. 11 - Typical Forward Recovery Characteristics
Fig. 12 - Recovery Time Characteristics
Fig. 13 - Recovery Charge Characteristics
D-660
To Order
Fig. 14 - Recovery Current Characteristics
Previous Datasheet
Index
Next Data Sheet
SD303C..C Series
Fig. 15 - Recovery Time Characteristics
Fig. 16 - Recovery Charge Characteristics
Fig. 17 - Recovery Current Characteristics
Fig. 18 - Recovery Time Characteristics
Fig. 19 - Recovery Charge Characteristics
Fig. 20 - Recovery Current Characteristics
Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics
D-661
To Order
Previous Datasheet
Index
SD303C..C Series
Fig. 22 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 23 - Maximum Total Energy Loss Per Pulse Characteristics
D-662
To Order
Next Data Sheet
Previous Datasheet
Index
Next Data Sheet
SD303C..C Series
Thermal and Mechanical Specifications
Parameter
SD303C..C
TJ
Max. operating temperature range
-40 to 125
T
Max. storage temperature range
-40 to 150
stg
RthJ-hs Max. thermal resistance,
DC operation single side cooled
K/W
0.08
Mounting force, ± 10%
wt
Conditions
°C
0.16
junction to heatsink
F
Units
DC operation double side cooled
4900
N
(500)
(Kg)
Approximate weight
70
g
Case style
DO-200AA
See Outline Table
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Conduction angle
Sinusoidal conduction
Rectangular conduction
Single Side Double Side
Single Side Double Side
180°
0.010
0.011
0.008
0.008
120°
0.012
0.013
0.013
0.013
90°
0.016
0.016
0.018
0.018
60°
0.024
0.024
0.025
0.025
30°
0.042
0.042
0.042
0.042
Units
Conditions
K/W
TJ = TJ max.
23
Ordering Information Table
Device Code
SD
30
3
C
1
2
3
4
25 S20
5
1
-
Diode
2
-
Essential part number
3
-
3 = Fast recovery
4
-
C = Ceramic Puk
5
-
Voltage code: Code x 100 = V RRM (see Voltage Ratings table)
6
-
trr code (see Recovery Characteristics table)
7
-
C = Puk Case DO-200AA
D-657 3333
To Order
6
C
7
Previous Datasheet
Index
Next Data Sheet
SD303C..C Series
4 2 ( 1 .6 5 ) D IA . M A X .
Outline Table
3.5(0.14) ± 0.1(0.004) DIA. NOM.x
1.8 (0.07) DEEP MIN. BOTH ENDS
12
0.3 (0.01) MIN.
BOTH ENDS
1 4 .4 (0 .5 7 )
TWO PLACES
38 (1.50) DIA. MAX.
1 3 .7 (0 .54 )
19(0.75) DIA. MAX.
Case Style DO-200AA
All dimensions in millimeters (inches)
2222222222222
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
D-658
To Order