Features Description The SE9205 is a four-channel Electro-Static Discharge (ESD) Protection device that is designed to protect sensitive IC’s from damage or latch-up due to ESD stress. It is designed to replace ¾ Four-channel protection. ¾ Low channel-to-channel capacitance at 3pF typical. ¾ Working voltage: Vdd=5V is optional. ¾ Low leakage current. ¾ Available in SOT-23-6L packages. multilayer varistors(MLVs) in portable applications such as cell phone, notebook computer, PDA’s, digital still camera, and other similar electronic devices. It offers desirable characteristics for board level protection, including fast response time, low operating voltage, and low channel-to-channel capacitance. The SE9205 is housed in a SOT-23-6L package that is ideal for use in portable electronics such as cell phone, PDA’s, notebook computer, and Application ¾ USB removable devices ¾ PDAs/Cell Phones ¾ Notebooks & Handhelds ¾ Portable Instrumentation ¾ Digital camera ¾ Peripherals ¾ MP3 Players digital still cameras. Pin Configuration Revision 5/23/2007 Preliminary and all contents are subject to change without prior notice © Seaward Electronics Inc., 2006. • www.seawardinc.com • Page 1 Absolute Maximum Ratings(1) Operating Ratings(2) Supply Input Voltage (VDD) ..…….……………… +5V Supply Input Voltage (VDD) …...…………………. 5.0V Power Dissipation (PD) ……….. Internally Limited (3) Junction Temperature (TJ) …….…………...... 150°C Junction Temperature (TJ) ……….….. 0°C to +125°C Package Thermal Resistance Lead Temperature (soldering, 5 sec.) …....…. 260°C 230°C/W (SOT-23-6L) Storage Temperature (TS) ……….. -40°C to +150°C Electrical Characteristics (TJ = 25°C) Symbol Parameter Conditions Min VDD Reverse Standaoff Voltage I = 10μA ILEAK Reverse Standaoff Leakage current V = 5.0V Typ Max 5 - V 1 100 nA -- Units Signal Clamp Voltage VC Positive I =10mA 5.6 6.8 8 Negative I = 10mA -1.2 -0.8 -0.4 V Clamp Voltage during ESD MIL-STD-883 Method 3015 ( HBM ) 8kV -- 12 -- 8kV -- -8 -- V ESD Test Level (4) IEC-61000-2, Contact Discharge 20 -- -- MIL-STD-883 Method 3015 ( HBM ) 30 -- -- kV Channel-to-GND Capacitance 0V @ 1 MHz -- 4 -- pF Channel-to-Channel Capacitance 0V @ 1 MHz -- 3 -- pF -- 1 -- ns Operating -40 -- 85 Storage -65 -- 150 Forward Conduction -- 1 -- Reverse Conduction -- 1.4 -- Turn on / off time Temperature Range ℃ Diode Dynamic Resistance V Note 1: Exceeding the absolute maximum rating may damage the device. Note 2: The device is not guaranteed to function outside its operating rating. Note 3: The maximum allowable power dissipation at any TA (ambient temperature) is calculated using: PD(MAX) = (TJ(MAX) - TA)/θJA. Exceeding the maximum allowable power dissipation will result in excessive die temperature, and the regulator will go into thermal shutdown. Note 4: ESD Voltage applied between channel pins and ground, one pin at a time; all other channel pins are open; all ground pins are grounded. Revision 5/23/2007 Preliminary and all contents are subject to change without prior notice © Seaward Electronics Inc., 2006. • www.seawardinc.com • Page 2 OUTLINE DRAWING SOT-23-6L Revision 5/23/2007 Preliminary and all contents are subject to change without prior notice © Seaward Electronics Inc., 2006. • www.seawardinc.com • Page 3 Contact Information Seaward Electronics Incorporated – China Room 1605, Building 1, International Pioneering Park, #1 Shangdi Xinxi Rd. Haidian District, Beijing 100085, China Tel: 86-10-8289-5700/01/05 Fax: 86-10-8289-5706 Email: [email protected] Seaward Electronics Corporation – Taiwan 2F, #181, Sec. 3, Min Quan East Rd. Taipei, Taiwan R.O.C Tel: 886-2-2712-0307 Fax: 886-2-2712-0191 Email: [email protected] Seaward Electronics Incorporated – North America 1512 Centre Pointe Dr. Milpitas, CA95035, USA Tel: 1-408-821-6600 Last Updated - 5/23/2007 Revision 5/23/2007 Preliminary and all contents are subject to change without prior notice © Seaward Electronics Inc., 2006. • www.seawardinc.com • Page 4