SK 35 TAA )*(+ )**+, )*+ ./0 12 3 ) 6&& $1&& ) 4&& $8&& / 0 4& 5 (712/33&4 (712/33$8 $9&& $%&& (712/33$% Characteristics Symbol Conditions SEMITOP®2 Two separated thyristors Values Units ./ / 0 $&&5 81 3 ./ / 0 4&5 12 3 ./(+:.;(+ /!< 0 82 $82 5= $& .? /!< 0 82 $82 5= !, $& 3 / / SK 35 TAA / 0 825 , $& >2& 14& 3 $&&& 98& 3? @>& AAA B $82 5 8%& 5 Thyristor Target Data Features ! " # $%&& ! ! Typical Applications ' ( !: : E . /!< 0 $82 5 /!< 0 $82 5= 0 2& AAA %& D /!< 0 $82 5= "A /!< 0 82 5= "A : A $&&& 2& $8& 4& : $2& ):C 3:C C 3 .F /!< 0 82 5= * 0 11 G= "A : A $2& : 1&& 3 )/ )// / .= .* *<@ /!< ) / . / ) /!< 0 82 5= ./ 0 92 3= A /!< 0 $82 5 /!< 0 $82 5 /!< 0 $82 5= ) 0 )*+= )* 0 )**+ A " /!< 0 82 5= A A /!< 0 82 5= A A /!< 0 $82 5= A A $,6 A &,42 A 6,$ A $& $,8 @>& AAA B$82 1 $&& &,82 ) ) H 3 7:I 5 ) 3 ) . /!< 0 $82 5= A A 1 3 Diode ); )/ / /!< 0 5= .; 0 3= A /!< 0 5 /!< 0 5 ) ) H .* /!< 0 5= )* 0 )**+ 3 *<@ 7:I /!< 5 Mechanical data ) +$ 3 2&D, AAA $ $ E (K+./LM8 82&& 1&&& 8 ) J $6 / 4$ TAA 1 04-06-2007 DIL © by SEMIKRON SK 35 TAA Fig. 1 Power dissipation vs. current Fig. 2 Transient thermal impedance vs. time Fig. 3 Forward chracteristic of single thyristor Fig. 4 Surge overload current vs. time Fig. 5 Gate trigger characteristic 2 04-06-2007 DIL © by SEMIKRON SK 35 TAA Dimensions in mm (# K(/K FK.3+K/K* ;* /K (FK* L.J( 3J /K +#J/.J L.J( .J /K LN 8 / 4$ ( , L, N 8 /33 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 3 04-06-2007 DIL © by SEMIKRON