SKB 33 ,-( Controllable Bridge Rectifiers SKB 33 ,,( % / 00 1 2 3 %,( 0 * : ; 9 5 < 24 / 5 6&3 -7 008 -7 0089 -7 0085 -7 008< -7 008 0 -7 008 Symbol Conditions Values Units % 4 / 9* 6& 3 4/ 9* 6&= 3 4/ 9* 6&= #18 5* 1 9 9 1 1 4/ 0* 6&= #18 ' 0 1 4> / * 6&= 4> / 0 6&= 4> / * 6&= <0 ))) 0: 09 5< 1 1 1? 4> / 0 6&= <0 ))) *< 1? +) 9 +) +) * A +) 1 C C 4-( '-( ? Features 4 4> / * 6&= 4/:* 1 4> / 0 6&= 4> / 0 6& %%= ,% 4> / 0 6&= 4> / * 6&= B / 1= B8 / 18C 4 424@3 !" Typical Applications # 1) 2) $ %& ' %& " % / 5: D %% / %,(= ,% / ,,( %,( 283 283 $ 4> / 0 6& 4> / 0 6&= / * E 4> / 0 6&= ") 4> / * 6&= ") 8 +) +) +) * < 8 8C 18C C 1 F 4> / * 6&= ,B / 00 A= ") 8 +) < 8 9 1 4> / * 6&= )) 4> / * 6&= )) 4> / 0 6&= )) ) 0 ) +) * 1 B% 4> / 0 6&= )) +) 0 1 ,2>G3 " 8 5 5* 5 78H 78H 78H B4 B4 B% ,2G3 '" 4> G 9 ))) I 0 6& 4 G ** ))) I * 6& 0 2 * 3 * J * K 0 J * K L L * & B 5 ( ) * + * + ( ( ) ) * E= )))= 8 ) SKB 1 04-05-2005 SCT © by SEMIKRON SKB 33 Fig. 1 Power dissipation vs. output current Fig. 2 Power dissipation vs. case temperature Fig. 5 Surge overload characteristics vs. time Fig. 9 Forward characteristics of a diode arm Fig. 10 On-state characteristics of a thyristor arm Fig. 12 Transient thermal impedance vs. time 2 04-05-2005 SCT © by SEMIKRON SKB 33 Fig. 11 Gate characteristics of a thyristor device Dimensions in mm & B 5 This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 3 04-05-2005 SCT © by SEMIKRON