SEMICONDUCTOR SMAB110 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. 2 E FEATURES Low Profile Surface Mount Package. H A For Use in Low Voltage, High Frequency inverters, Free D Low Power Loss, High Efficiency. E Wheeling, and Polarity Protection Applications. APPLICATION 1 C Switching Power Supply. B DC/DC Converter. DIM A B C D E F G H Home Appliances, Office Equipment. F Telecommunication. G 1. ANODE MAXIMUM RATING (Ta=25 MILLIMETERS _ 0.2 4.5 + _ 0.2 2.6 + _ 0.2 1.5 + _ 0.3 5.0 + _ 0.3 1.2 + _ 0.2 2.0 + 0 ~ 0.15 R 0.5 2. CATHODE ) CHARACTERISTIC SYMBOL RATING UNIT Maximum Repetitive Peak Reverse Voltage VRRM 100 V IO 1 A IFSM 30 A Tj -40 125 Tstg -40 125 Average Output Rectitifed Current Peak One Cycle Surge Forward Current (Non-Repetitive 60Hz) Junction Temperature Storage Temperature Range SMA Marking Type Name B110 Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Peak Forward Voltage VFM IFM=1.0A - - 0.80 V Repetitive Peak Reverse Current IRRM VRRM=Rated - - 1 mA Rth(j-1) Junction to lead - - 23 - - 108 Thermal Resistance 2002. 9. 10 Rth(j-a) Revision No : 1 Junction to ambient (on alumina substrate) /W 1/2 I F - VF 5 3 T j =125 C 25 C 1 0.5 0.3 PEAK SURGE FORWARD CURRENT I FSM (A) 0.1 0.4 0.6 0.8 1.0 1.2 0.8 0.7 0.6 0.5 0.4 RECTANGULAR WAVEFORM 0.3 0.2 180 0.1 360 0 0 0.2 0.4 0.6 0.8 1.0 1.2 SURGE FORWARD CURRENT (NON - REPETITIVE) I F(AV) - T l Ta=25 C f=60Hz 30 20 10 0 10 NUMBER OF CYCLES AT 60Hz 2002. 9. 10 0.9 AVERAGE FORWARD CURRENT I F(AV) (A) 40 1 P F(AV) - I F(AV) FORWARD VOLTAGE V F (V) Revision No : 1 100 AVERAGE FORWARD CURRENT I F(AV) (A) FORWARD CURRENT I F (A) 10 AVERAGE FORWARD POWER DISSIPATION P F(AV) (W) SMAB110 1.5 1.0 0.5 0 0 25 50 75 100 125 LEAD TEMPERATURE T l ( C) 2/2