SMK0170 Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • PIN Connection High Voltage : BVDSS=700V(Min.) Low Crss : Crss=2.6pF(Typ.) Low gate charge : Qg=4.1nC(Typ.) Low RDS(on) : RDS(on)=15Ω(Max.) D G Ordering Information Type No. Marking Package Code SMK0170 SMK0170 TO-92 G DS S TO-92 Marking Diagram SMK 0170 YWW Column 1,2 : Device Code Column 3 : Production Information e.g.) YWW -. YWW : Date Code (year, Week) Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Symbol Rating Unit Drain-source voltage VDSS 700 V Gate-source voltage VGSS ±30 V (Tc=25℃) 0.3 A (Tc=100℃) 0.18 A IDM 1.2 A PD 625 W Drain current (DC) * Drain current (Pulsed) Power dissipation ID * ** Avalanche current (Single) ② IAS 0.3 A Single pulsed avalanche energy ② EAS 17 mJ Avalanche current (Repetitive) ① IAR 0.3 A Repetitive avalanche energy ① EAR 0.5 mJ TJ 150 Tstg -55~150 Junction temperature Storage temperature range °C * Limited by maximum junction temperature ** Device mounted on a glass-epoxy board Characteristic Thermal resistance Junction-ambient Symbol Typ. Max. Unit Rth(J-A) - 200 °C/W KSD-T0A015-001 1 SMK0170 Electrical Characteristics (TC=25°C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage BVDSS ID=250uA, VGS=0 700 - - V Gate threshold voltage VGS(th) ID=250uA, VDS=VGS 2.0 - 4.0 V Drain-source cut-off current IDSS VDS=700V, VGS=0V - - 1 uA Gate leakage current IGSS VDS=0V, VGS=±30V - - ±100 nA Drain-source on-resistance ④ RDS(ON) VGS=10V, ID=150mA - 12.5 15.0 Ω Forward transfer conductance ④ gfs VDS=10V, ID=150mA - 2.1 - S - 124 155 - 17.7 22.1 - 2.6 3.3 - 7 - - 21 - - 13 - - 27 - - 4.1 5.1 - 1.8 - - 0.9 - Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VGS=0V, VDS=25V, f=1MHz VDD=300V, ID=0.3A RG=25Ω ③④ VDS=560V, VGS=10V ID=0.3A ③④ pF ns nC Source-Drain Diode Ratings and Characteristics (TC=25°C unless otherwise noted) Characteristic Symbol Source current (DC) IS Test Condition Min. Typ. Max. Unit - - 0.3 - - 1.2 Source current (Pulsed) ① ISM Integral reverse diode in the MOSFET Forward voltage ④ VSD VGS=0V, IS=0.3A - - 1.4 V Reverse recovery time trr - 190 - ns Reverse recovery charge Qrr IS=0.3A, VGS=0V dIF/dt=100A/us - 0.53 - uC A Note ; ① Repetitive rating : Pulse width limited by maximum junction temperature ② L=50mH, IAS=0.8A, VDD=50V, RG=25Ω, Starting TJ=25℃ ③ Pulse Test : Pulse width≤300us, Duty cycle≤2% ④ Essentially independent of operating temperature KSD-T0A015-001 2 SMK0170 Electrical Characteristic Curves Fig. 2 ID - VGS Fig. 1 ID - VDS ℃ T - Fig. 4 IS - VSD Fig. 3 RDS(on) - ID ℃ Fig. 6 VGS - QG Fig. 5 Capacitance - VDS ℃ KSD-T0A015-001 3 SMK0170 Fig. 8 RDS(on) - TJ Fig. 7 VDSS - TJ ㅋ C C Fig. 10 Safe Operating Area Fig. 9 ID - Ta ` * KSD-T0A015-001 4 Fig. 11 Gate Charge Test Circuit & Waveform SMK0170 Fig. 12 Resistive Switching Test Circuit & Waveform Fig. 13 EAS Test Circuit & Waveform KSD-T0A015-001 5 SMK0170 Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform KSD-T0A015-001 6 SMK0170 Outline Dimension unit: mm KSD-T0A015-001 7 SMK0170 The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-T0A015-001 8