KODENSHI SMN09L20D

SMN09L20D
Advanced LOGIC N-Ch MOSFET
DC-DC CONVERTER APPLICATION
HIGH VOLTAGE SWITCHING APPLICATIONS
Features




PIN Connection
High Voltage : BVDSS=200V(Min.)
Low Crss : Crss=17pF(Typ.)
Low gate charge : Qg=9nC(Typ.)
Low RDS(on) : RDS(on)=0.4Ω(Max.)
D
D
G
Ordering Information
Type No.
Marking
Package Code
SMN09L20D
SMN09L20
TO-252
G
S
S
TO-252
Marking Diagram
SMN
09L20
YWW
Column 1,2 : Device Code
Column 3 : Production Information
e.g.) YWW
-. YWW : Date Code (Year, Week)
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
200
V
Gate-source voltage
VGSS
30
V
Tc=25C
9
A
Tc=100C
5.7
A
IDM
36
A
PD
45
W
Drain current (DC)
*
Drain current (Pulsed)
ID
*
Power dissipation
Avalanche current (Single)
②
IAS
9
A
Single pulsed avalanche energy
②
EAS
232
mJ
Avalanche current (Repetitive)
①
IAR
9
A
Repetitive avalanche energy
①
EAR
9.5
mJ
TJ
150
Tstg
-55~150
Junction temperature
Storage temperature range
C
* Limited by maximum junction temperature
Characteristic
Thermal
resistance
Junction-case
Junction-ambient
**
Symbol
Typ.
Max.
Rth(J-C)
-
2.77
Rth(J-A)
-
50
Unit
C/W
** When mounted on the minimum pad size recommended (PCB Mount)
KSD-T6O024-000
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SMN09L20D
Electrical Characteristics (TC=25C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Drain-source breakdown voltage
BVDSS
ID=250uA, VGS=0
200
-
-
V
Gate threshold voltage
VGS(th)
ID=250uA, VDS=VGS
1.0
-
2.25
V
Drain-source cut-off current
IDSS
VDS=200V, VGS=0V
-
-
1
uA
Gate leakage current
IGSS
VDS=0V, VGS=30V
-
-
100
nA
Drain-source on-resistance
④
RDS(ON)
VGS=10V, ID=4.5A
-
0.34
0.40

Forward transfer conductance
④
gfs
VDS=10V, ID=4.5A
-
5.5
-
S
-
556
600
-
100
150
Input capacitance
Ciss
VGS=0V, VDS=25V,
f=1MHz
Output capacitance
Coss
Reverse transfer capacitance
Crss
-
17
30
Turn-on delay time
td(on)
-
18
-
-
36
-
-
133
-
-
45
-
-
9
15
-
4
-
-
3
-
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
VDD=100V, ID=9A
RG=25Ω
③④
VDS=160V, VGS=5V
ID=9A
③④
pF
ns
nC
Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted)
Characteristic
Symbol
Source current (DC)
IS
Test Condition
Min.
Typ.
Max.
-
-
9
-
-
36
Unit
Source current (Pulsed)
①
ISM
Integral reverse diode
in the MOSFET
Forward voltage
④
VSD
VGS=0V, IS=9A
-
-
1.5
V
Reverse recovery time
trr
-
158
-
ns
Reverse recovery charge
Qrr
IS=9A, VGS=0V
dIF/dt=100A/us
-
0.97
-
uC
A
Note ;
① Repetitive rating : Pulse width limited by maximum junction temperature
② L=4.3mH, IAS=9A, VDD=50V, RG=25Ω, Starting TJ=25C
③ Pulse Test : Pulse width≤300us, Duty cycle≤2%
④ Essentially independent of operating temperature
KSD-T6O024-000
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SMN09L20D
Electrical Characteristic Curves
Fig. 1 ID - VDS
Fig. 2 ID - VGS
Fig. 3 RDS(on) - ID
Fig. 4 IS - VSD
Fig. 5 Capacitance - VDS
Fig. 6 VGS - QG
℃
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SMN09L20D
Fig. 8 RDS(on) - TJ
Fig. 7 VDSS - TJ
ㅋ
C
C
Fig. 9
Fig. 10 Safe Operating Area
ID - TC
*
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Fig. 11 Gate Charge Test Circuit & Waveform
SMN09L20D
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 EAS Test Circuit & Waveform
KSD-T6O024-000
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SMN09L20D
Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform
KSD-T6O024-000
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SMN09L20D
Outline Dimension
unit: mm
※ Recommended Land Pattern [unit: mm]
2.50
7.00
7.00
1.50
4.60
KSD-T6O024-000
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SMN09L20D
The AUK Corp. products are intended for the use as components in general electronic
equipment (Office and communication equipment, measuring equipment, home
appliance, etc.).
Please make sure that you consult with us before you use these AUK Corp. products
in equipments which require high quality and / or reliability, and in equipments which
could have major impact to the welfare of human life(atomic energy control, airplane,
spaceship, transportation, combustion control, all types of safety device, etc.). AUK
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.
products were used in the mentioned equipments without prior consultation with AUK
Corp..
Specifications mentioned in this publication are subject to change without notice.
KSD-T6O024-000
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