TI SN74LVC1G34DBVT

SN74LVC1G34
SINGLE BUFFER GATE
www.ti.com
SCES519F – DECEMBER 2003 – REVISED OCTOBER 2005
FEATURES
•
•
•
•
•
•
•
Available in the Texas Instruments
NanoStar™ and NanoFree™ Packages
Supports 5-V VCC Operation
Inputs Accept Voltages to 5.5 V
Max tpd of 3.5 ns at 3.3 V
Low Power Consumption, 1-µA Max ICC
±24-mA Output Drive at 3.3 V
•
•
DCK PACKAGE
(TOP VIEW)
DBV PACKAGE
(TOP VIEW)
NC
1
A
2
GND
3
Ioff Supports Partial-Power-Down Mode
Operation
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
ESD Protection Exceeds JESD 22
– 2000-V Human-Body Model (A114-A)
– 200-V Machine Model (A115-A)
– 1000-V Charged-Device Model (C101)
NC
1
A
2
GND
3
VCC
5
5
4
DRL PACKAGE
(TOP VIEW)
VCC
Y
NC
1
A
2
GND
3
5
VCC
4
Y
Y
4
YEA, YEP, YZA, OR YZP PACKAGE
(BOTTOM VIEW)
GND
A
DNU
3 4
Y
2
1 5
YZV PACKAGE
(BOTTOM VIEW)
GND
2 3
Y
A
1 4
VCC
VCC
DNU − Do not use
See mechanical drawings for dimensions.
DESCRIPTION/ORDERING INFORMATION
This single buffer gate is designed for 1.65-V to 5.5-V VCC operation. The SN74LVC1G34 performs the Boolean
function Y = A in positive logic.
NanoStar™ and NanoFree™ package technology is a major breakthrough in IC packaging concepts, using the
die as the package.
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs,
preventing damaging current backflow through the device when it is powered down.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NanoStar, NanoFree are trademarks of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2003–2005, Texas Instruments Incorporated
SN74LVC1G34
SINGLE BUFFER GATE
www.ti.com
SCES519F – DECEMBER 2003 – REVISED OCTOBER 2005
ORDERING INFORMATION
TA
PACKAGE (1)
ORDERABLE PART NUMBER
NanoStar™ – WCSP (DSBGA)
0.23-mm Large Bump – YEP
SN74LVC1G34YEPR
Reel of 3000
NanoFree™ – WCSP (DSBGA)
0.23-mm Large Bump – YZP
(Pb-free)
–40°C to 85°C
NanoStar™ – WCSP (DSBGA)
0.23-mm Large Bump – YZV
(Pb-free)
SOT (SC-70) – DCK
SOT (SOT-553) – DRL
(2)
_ _ _C9_
SN74LVC1G34YZPR
SOT (SOT-23) – DBV
(1)
Reel of 3000
SN74LVC1G34YZVR
Reel of 3000
SN74LVC1G34DBVR
Reel of 250
SN74LVC1G34DBVT
Reel of 3000
SN74LVC1G34DCKR
Reel of 250
SN74LVC1G34DCKT
Reel of 4000
SN74LVC1G34DRLR
____
C9
C34_
C9_
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at
www.ti.com/sc/package.
DBV/DCK/DRL: The actual top-side marking has one additional character that designates the assembly/test site.
YEA/YEP, YZA/YZP: The actual top-side marking has three preceding characters to denote year, month, and sequence code, and one
following character to designate the assembly/test site. Pin 1 identifier indicates solder-bump composition (1 = SnPb, • = Pb-free).
YZV: The actual top-side marking is on two lines. Line 1 has four characters to denote year, month, day, and assembly/test site. Line 2
has two characters which show the family and function code. Pin 1 identifier indicates solder-bump composition (1 = SnPb, • = Pb-free).
FUNCTION TABLE
INPUT
A
OUTPUT
Y
H
H
L
L
LOGIC DIAGRAM (POSITIVE LOGIC)
(DBV, DCK, DRL, YEA, YEP, YZA, and YZP Package)
A
2
4
Y
LOGIC DIAGRAM (POSITIVE LOGIC)
(YZV Package)
A
2
TOP-SIDE MARKING (2)
1
3
Y
SN74LVC1G34
SINGLE BUFFER GATE
www.ti.com
SCES519F – DECEMBER 2003 – REVISED OCTOBER 2005
Absolute Maximum Ratings
(1)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
VCC
Supply voltage range
–0.5
6.5
V
VI
Input voltage range
–0.5
6.5
V
–0.5
6.5
V
–0.5
VCC + 0.5
state (2)
UNIT
VO
Voltage range applied to any output in the high-impedance or power-off
VO
Voltage range applied to any output in the high or low state (2) (3)
IIK
Input clamp current
VI < 0
–50
mA
IOK
Output clamp current
VO < 0
–50
mA
IO
Continuous output current
±50
mA
±100
mA
Continuous current through VCC or GND
θJA
Package thermal impedance (4)
DBV package
206
DCK package
252
DRL package
142
YEA/YZA package
154
YEP/YZP package
132
YZV package
Tstg
(1)
(2)
(3)
(4)
Storage temperature range
V
°C/W
116
–65
150
°C
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The input and output negative-voltage ratings may be exceeded if the input and output current ratings are observed.
The value of VCC is provided in the recommended operating conditions table.
The package thermal impedance is calculated in accordance with JESD 51-7.
3
SN74LVC1G34
SINGLE BUFFER GATE
www.ti.com
SCES519F – DECEMBER 2003 – REVISED OCTOBER 2005
Recommended Operating Conditions (1)
VCC
Supply voltage
Operating
Data retention only
VCC = 1.65 V to 1.95 V
VIH
High-level input voltage
VCC = 2.3 V to 2.7 V
VCC = 3 V to 3.6 V
VCC = 4.5 V to 5.5 V
MIN
MAX
1.65
5.5
1.5
Low-level input voltage
V
0.65 × VCC
1.7
V
2
0.7 × VCC
0.35 × VCC
VCC = 1.65 V to 1.95 V
VIL
UNIT
VCC = 2.3 V to 2.7 V
0.7
VCC = 3 V to 3.6 V
0.8
V
0.3 × VCC
VCC = 4.5 V to 5.5 V
VI
Input voltage
0
5.5
V
VO
Output voltage
0
VCC
V
VCC = 1.65 V
–4
VCC = 2.3 V
IOH
High-level output current
–8
–16
VCC = 3 V
VCC = 4.5 V
–32
VCC = 1.65 V
4
VCC = 2.3 V
IOL
Low-level output current
∆t/∆v
TA
(1)
4
Input transition rise or fall rate
Operating free-air temperature
mA
–24
8
16
VCC = 3 V
mA
24
VCC = 4.5 V
32
VCC = 1.8 V ± 0.15 V, 2.5 V ± 0.2 V
20
VCC = 3.3 V ± 0.3 V
10
VCC = 5 V ± 0.5 V
10
–40
85
All unused inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
ns/V
°C
SN74LVC1G34
SINGLE BUFFER GATE
www.ti.com
SCES519F – DECEMBER 2003 – REVISED OCTOBER 2005
Electrical Characteristics
over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VCC
IOH = –100 µA
VOH
1.65 V to 5.5 V
1.65 V
1.2
IOH = –8 mA
2.3 V
1.9
4.5 V
1.65 V to 5.5 V
0.1
IOL = 4 mA
1.65 V
0.45
IOL = 8 mA
2.3 V
0.3
(1)
0.4
VI = 5.5 V or GND
VI or VO = 5.5 V
ICC
VI = 5.5 V or GND
IO = 0
One input at VCC – 0.6 V,
Other inputs at VCC or GND
V
0.55
4.5 V
Ioff
Ci
3.8
3V
IOL = 32 mA
∆ICC
2.3
IOL = 100 µA
IOL = 24 mA
UNIT
V
IOH = –32 mA
IOL = 16 mA
II
MAX
2.4
3V
IOH = –24 mA
TYP (1)
VCC – 0.1
IOH = –4 mA
IOH = –16 mA
VOL
MIN
0.55
0 to 5.5 V
±1
µA
0
±10
µA
1
µA
500
µA
1.65 V to 5.5 V
3 V to 5.5 V
VI = VCC or GND
3.3 V
3.5
pF
All typical values are at VCC = 3.3 V, TA = 25°C.
Switching Characteristics
over recommended operating free-air temperature range, CL = 15 pF (unless otherwise noted) (see Figure 1)
PARAMETER
tpd
FROM
(INPUT)
TO
(OUTPUT)
A
Y
VCC = 1.8 V
± 0.15 V
MIN MAX
2
VCC = 2.5 V
± 0.2 V
VCC = 3.3 V
± 0.3 V
MIN
MAX
MIN
MAX
MIN
MAX
1.5
6
1
3.5
1
2.9
9.9
VCC = 5 V
± 0.5 V
UNIT
ns
Switching Characteristics
over recommended operating free-air temperature range, CL = 30 pF or 50 pF (unless otherwise noted) (see Figure 2)
PARAMETER
tpd
FROM
(INPUT)
TO
(OUTPUT)
A
Y
VCC = 1.8 V
± 0.15 V
MIN MAX
3.2
VCC = 2.5 V
± 0.2 V
VCC = 3.3 V
± 0.3 V
MIN
MAX
MIN
MAX
MIN
MAX
1.5
4.4
1.5
4.1
1
3.2
8.6
VCC = 5 V
± 0.5 V
UNIT
ns
Operating Characteristics
TA = 25°C
PARAMETER
Cpd
Power dissipation capacitance
TEST
CONDITIONS
VCC = 1.8 V
VCC = 2.5 V
VCC = 3.3 V
VCC = 5 V
TYP
TYP
TYP
TYP
f = 10 MHz
16
16
16
18
UNIT
pF
5
SN74LVC1G34
SINGLE BUFFER GATE
www.ti.com
SCES519F – DECEMBER 2003 – REVISED OCTOBER 2005
PARAMETER MEASUREMENT INFORMATION
VLOAD
S1
RL
From Output
Under Test
CL
(see Note A)
Open
GND
RL
TEST
S1
tPLH/tPHL
tPLZ/tPZL
tPHZ/tPZH
Open
VLOAD
GND
LOAD CIRCUIT
INPUTS
VCC
1.8 V ± 0.15 V
2.5 V ± 0.2 V
3.3 V ± 0.3 V
5 V ± 0.5 V
VI
tr/tf
VCC
VCC
3V
VCC
≤2 ns
≤2 ns
≤2.5 ns
≤2.5 ns
VM
VLOAD
CL
RL
V∆
VCC/2
VCC/2
1.5 V
VCC/2
2 × VCC
2 × VCC
6V
2 × VCC
15 pF
15 pF
15 pF
15 pF
1 MΩ
1 MΩ
1 MΩ
1 MΩ
0.15 V
0.15 V
0.3 V
0.3 V
VI
Timing Input
VM
0V
tw
tsu
VI
Input
VM
VM
th
VI
Data Input
VM
VM
0V
0V
VOLTAGE WAVEFORMS
PULSE DURATION
VOLTAGE WAVEFORMS
SETUP AND HOLD TIMES
VI
VM
Input
VM
0V
tPLH
VM
VM
VOL
tPHL
VM
VM
0V
Output
Waveform 1
S1 at VLOAD
(see Note B)
tPLH
tPLZ
VLOAD/2
VM
tPZH
VOH
Output
VM
tPZL
tPHL
VOH
Output
VI
Output
Control
VM
VOL
VOLTAGE WAVEFORMS
PROPAGATION DELAY TIMES
INVERTING AND NONINVERTING OUTPUTS
Output
Waveform 2
S1 at GND
(see Note B)
VOL + V∆
VOL
tPHZ
VM
VOH − V∆
VOH
≈0 V
VOLTAGE WAVEFORMS
ENABLE AND DISABLE TIMES
LOW- AND HIGH-LEVEL ENABLING
NOTES: A. CL includes probe and jig capacitance.
B. Waveform 1 is for an output with internal conditions such that the output is low, except when disabled by the output control.
Waveform 2 is for an output with internal conditions such that the output is high, except when disabled by the output control.
C. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω.
D. The outputs are measured one at a time, with one transition per measurement.
E. tPLZ and tPHZ are the same as tdis.
F. tPZL and tPZH are the same as ten.
G. tPLH and tPHL are the same as tpd.
H. All parameters and waveforms are not applicable to all devices.
Figure 1. Load Circuit and Voltage Waveforms
6
SN74LVC1G34
SINGLE BUFFER GATE
www.ti.com
SCES519F – DECEMBER 2003 – REVISED OCTOBER 2005
PARAMETER MEASUREMENT INFORMATION
VLOAD
S1
RL
From Output
Under Test
CL
(see Note A)
Open
GND
RL
TEST
S1
tPLH/tPHL
tPLZ/tPZL
tPHZ/tPZH
Open
VLOAD
GND
LOAD CIRCUIT
INPUTS
VCC
1.8 V ± 0.15 V
2.5 V ± 0.2 V
3.3 V ± 0.3 V
5 V ± 0.5 V
VI
tr/tf
VCC
VCC
3V
VCC
≤2 ns
≤2 ns
≤2.5 ns
≤2.5 ns
VM
VLOAD
CL
RL
V∆
VCC/2
VCC/2
1.5 V
VCC/2
2 × VCC
2 × VCC
6V
2 × VCC
30 pF
30 pF
50 pF
50 pF
1 kΩ
500 Ω
500 Ω
500 Ω
0.15 V
0.15 V
0.3 V
0.3 V
VI
Timing Input
VM
0V
tw
tsu
VI
Input
VM
VM
th
VI
Data Input
VM
VM
0V
0V
VOLTAGE WAVEFORMS
PULSE DURATION
VOLTAGE WAVEFORMS
SETUP AND HOLD TIMES
VI
VM
Input
VM
0V
tPLH
VM
VM
VOL
tPHL
VM
VM
0V
Output
Waveform 1
S1 at VLOAD
(see Note B)
tPLH
tPLZ
VLOAD/2
VM
tPZH
VOH
Output
VM
tPZL
tPHL
VOH
Output
VI
Output
Control
VM
VOL
VOLTAGE WAVEFORMS
PROPAGATION DELAY TIMES
INVERTING AND NONINVERTING OUTPUTS
Output
Waveform 2
S1 at GND
(see Note B)
VOL + V∆
VOL
tPHZ
VM
VOH − V∆
VOH
≈0 V
VOLTAGE WAVEFORMS
ENABLE AND DISABLE TIMES
LOW- AND HIGH-LEVEL ENABLING
NOTES: A. CL includes probe and jig capacitance.
B. Waveform 1 is for an output with internal conditions such that the output is low, except when disabled by the output control.
Waveform 2 is for an output with internal conditions such that the output is high, except when disabled by the output control.
C. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω.
D. The outputs are measured one at a time, with one transition per measurement.
E. tPLZ and tPHZ are the same as tdis.
F. tPZL and tPZH are the same as ten.
G. tPLH and tPHL are the same as tpd.
H. All parameters and waveforms are not applicable to all devices.
Figure 2. Load Circuit and Voltage Waveforms
7
PACKAGE OPTION ADDENDUM
www.ti.com
31-Oct-2005
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
SN74LVC1G34DBVR
ACTIVE
SOT-23
DBV
5
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN74LVC1G34DBVRE4
ACTIVE
SOT-23
DBV
5
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN74LVC1G34DBVT
ACTIVE
SOT-23
DBV
5
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN74LVC1G34DBVTE4
ACTIVE
SOT-23
DBV
5
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN74LVC1G34DCKR
ACTIVE
SC70
DCK
5
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN74LVC1G34DCKRE4
ACTIVE
SC70
DCK
5
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN74LVC1G34DCKT
ACTIVE
SC70
DCK
5
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN74LVC1G34DCKTE4
ACTIVE
SC70
DCK
5
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN74LVC1G34DRLR
ACTIVE
SOP
DRL
5
4000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN74LVC1G34DRLRG4
ACTIVE
SOP
DRL
5
4000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN74LVC1G34YEPR
ACTIVE
WCSP
YEP
5
3000
TBD
SNPB
Level-1-260C-UNLIM
SN74LVC1G34YZPR
ACTIVE
WCSP
YZP
5
3000
Pb-Free
(RoHS)
SNAGCU
Level-1-260C-UNLIM
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS) or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
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Addendum-Page 1
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