SENSITRON SEMICONDUCTOR SPXXMXXX-XXX DATA SHEET 658, REV. - Standard Industrial Grade MOSFET Power Modules FEATURES: High Power Density Low Drain to Source Resistance (RDS(on)) Low Thermal Resistance (R JC) INDUSTRIAL MOSFET PRODUCT MAP ID (Amps) CONFIGURATION VDSS (V) 10 25 50 100 200 300 400 60 - - - - - - SPM1M350-006 Single SPM1M400-006 100 - - - - SPM1M250-010 SPM1M300-010 - 300 - - - SPM1M130-030 - - - SPM1M160-030 600 - - SPM1M070-060 SPM1M090-060 - - - 1000 - - SPM1M045-100 - - - - - SPM2M200-006 - - SPM1M065-100 60 HalfBridge - - - SPM2M250-006 100 - - - SPM2M150-010 SPM2M200-010 - - 300 - - - SPM2M080-030 - - - - - - - - - - - - SPM2M120-030 600 - - SPM2M040-060 SPM2M050-060 1000 - SPM2M025-100 SPM2M035-100 60 - - SPC4M075-006 SPM4M130-006 - - - 100 - - SPC4M045-010 SPM4M130-010 - - - SPC4M075-010 H-Bridge 200 - SPC4M030-020 SPC4M050-020 - - - - 300 - - SPC4M040-030 SPM4M080-030 - - - 600 - SPC4M020-060 SPM4M040-060 - - - - 1000 SPC4M012-100 SPM4M024-100 - - - - - 221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 World Wide Web Site - http://www.sensitron.com E-Mail Address - [email protected] SENSITRON SEMICONDUCTOR SPXXMXXX-XXX DATA SHEET 658, REV. - Industrial Grade MOSFET Power Modules INDUSTRIAL MOSFET PRODUCT MAP ID (Amps) VDSS (V) 10 25 50 100 200 300 400 60 - - SPC8M075-006 - - - - 100 - - SPC8M045-010 - - - - Dual 200 - SPC8M030-020 - - - - - H-Bridge 600 SPC8M011-060 - - - - - - 60 - - SPC6M075-006 - - - - 100 - - SPC6M045-010 - - - - 200 - SPC6M030-020 - - - - - 600 SPC6M011-060 - - - - - - 1000 SPC6M006-100 - - - - - - CONFIGURATION 3-Phase Bridge Note: Operating temperature range is -40C to 125C; storage temperature range is -40C to 150C. 221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 World Wide Web Site - http://www.sensitron.com E-Mail Address - [email protected] SPXXMXXX-XXX DATA SHEET 658, REV. INDUSTRIAL MOSFET MODULES Single Devices MOSFET CHARACTERISTICS PART NUMBER SPM1M350-006 SPM1M400-006 SPM1M250-010 SPM1M300-010 SPM1M130-030 SPM1M160-030 SPM1M070-060 SPM1M090-060 SPM1M045-100 SPM1M065-100 VDSS Continuous Drain Current o IC @ Tc=25 C Pulsed Drain Current o TC=25 C Volts Amps Amps 60 60 100 100 300 300 600 600 1000 1000 350 400 250 300 130 160 70 90 45 65 900 1000 700 900 400 600 250 350 140 200 Rds(on)@ID Ciss Typ trr max 25oC Maximum PD@ TC=25oC A nF ns Watts o 60 100 60 100 60 90 30 50 20 25 18 28 18 28 18 28 18 28 18 28 60 60 200 200 200 200 250 250 250 250 800 1000 1000 1500 1000 1500 1000 1500 1000 1500 0.14 0.11 0.11 0.07 0.11 0.07 0.11 0.07 0.11 0.07 Ciss Typ trr max 25oC Maximum PD@ TC=25oC nF ns Watts 9.0 14 9.0 14 9.0 14 9.0 14 9.0 14 60 60 200 200 200 200 250 250 250 250 460 600 600 900 600 900 600 900 600 900 0.003 0.002 0.007 0.005 0.030 0.018 0.100 0.070 0.300 0.200 R JC C/W Half-Bridge Devices MOSFET CHARACTERISTICS PART NUMBER SPM2M200-006 SPM2M250-006 SPM2M150-010 SPM2M200-010 SPM2M080-030 SPM2M120-030 SPM2M040-060 SPM2M050-060 SPM2M025-100 SPM2M035-100 VDSS Continuous Drain Current IC @ Tc=25oC Pulsed Drain Current TC=25oC Volts Amps Amps 60 60 100 100 300 300 600 600 1000 1000 200 250 150 200 80 120 40 50 25 35 500 600 400 500 250 350 150 200 75 120 Rds(on)@ID A 0.005 0.004 0.013 0.009 0.055 0.035 0.180 0.120 0.55 0.37 40 60 40 60 40 60 20 30 10 15 R JC o C/W 0.27 0.20 0.20 0.13 0.20 0.13 0.20 0.13 0.20 0.13 H-Bridge Devices MOSFET CHARACTERISTICS PART NUMBER SPM4M130-006 SPM4M130-010 SPM4M080-030 SPM4M040-060 SPM4M024-100 SPC4M075-006 SPC4M045-010 SPC4M075-010 SPC4M030-020 SPC4M050-020 SPC4M040-030 SPC4M020-060 SPC4M012-100 VDSS Continuous Drain Current IC @ Tc=25oC Pulsed Drain Current TC=25oC Volts Amps Amps 60 100 300 600 1000 60 100 100 200 200 300 600 1000 130 130 80 40 24 75 45 75 30 50 40 20 12 400 400 300 120 70 220 130 300 120 200 150 80 45 Rds(on)@ID 0.006 0.011 0.053 0.180 0.55 0.010 0.030 0.020 0.075 0.05 0.085 0.350 1.00 Ciss Typ trr max 25oC Maximum PD@ TC=25oC A nF ns Watts 20 20 20 20 15 20 20 20 15 15 20 10 6.0 6.0 9.0 9.0 9.0 9.0 2.8 3.5 4.5 2.8 4.5 4.8 4.5 4.0 60 200 200 250 250 60 170 200 360 200 200 250 250 230 600 600 900 600 150 180 300 180 300 300 300 300 R JC o C/W 0.56 0.20 0.20 0.20 0.20 1.0 0.70 0.40 0.70 0.40 0.40 0.40 0.40 221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 World Wide Web Site - http://www.sensitron.com E-Mail Address - [email protected] SPXXMXXX-XXX DATA SHEET 658, REV. Dual H-Bridge Devices MOSFET CHARACTERISTICS PART NUMBER SPC8M075-006 SPC8M045-010 SPC8M030-020 SPC8M011-060 VDSS Continuous Drain Current IC @ Tc=25oC Pulsed Drain Current TC=25oC Volts Amps Amps 60 100 200 600 75 45 30 11 220 130 120 45 Rds(on)@ID 0.010 0.030 0.075 0.55 Ciss Typ trr max 25oC Maximum PD@ TC=25oC A nF ns Watts 20 20 15 5.0 2.8 3.5 2.8 2.7 60 170 360 250 150 180 180 180 R JC o C/W 1.0 0.70 0.70 0.40 DIODE CHARACTERISTICS PART NUMBER Amps SPC8M075-006 SPC8M045-010 SPC8M030-020 SPC8M011-060 C VF @ IF TJ=25oC Typ Volts Amps 80 80 80 80 1.05 1.05 1.05 1.6 Current Rating IFavM @ D=0.5, Tc 25 25 25 15 o o Typ ns Thermal Resistance R JC o C/W 30 30 30 50 1.6 1.6 1.6 1.6 trr @ -di/dt=100A/ sec, TJ=25 C 25 25 25 15 Three-Phase Bridge Devices MOSFET CHARACTERISTICS PART NUMBER SPC6M075-006 SPC6M045-010 SPC6M030-020 SPC6M011-060 SPC6M006-060 VDSS Continuous Drain Current IC @ Tc=25oC Pulsed Drain Current TC=25oC Volts Amps Amps 60 100 200 600 1000 75 45 30 11 6.0 220 130 120 45 24 Rds(on)@ID 0.010 0.030 0.075 0.55 2.0 Ciss Typ trr max 25oC Maximum PD@ TC=25oC A nF ns Watts 20 20 15 5.0. 3.0 2.8 3.5 2.8 2.7 2.6 60 170 360 250 250 150 180 180 180 180 R JC o C/W 1.0 0.70 0.70 0.70 0.70 221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 World Wide Web Site - http://www.sensitron.com E-Mail Address - [email protected] SPXXMXXX-XXX DATA SHEET 658, REV. SCHEMATIC DIAGRAMS (for SPMxMxxx-xxx) Pin 1 Pin 1 Pin 1, 2 Pin 5 Pin 5 Pin 7 Pin 8 Pin 6 Pin 7 Pin 2 Pin 7 Pins 2, 3 Pin3 Pin 8 Pins 3,4 Pin 11 Schematic for SPM1Mxxx-xxx Pin 10 Pin 9 Pin 9 Pin 4 Pin 11 Pin 4 Schematic for SPM4Mxxx-xxx Schematic for SPM2Mxxx-xxx PACKAGE OUTLINE (for SPM1Mxxx-xxx, SPM2Mxxx-xxx, SPM4Mxxx-xxx) (All dimensions are in inches) Power Pins Signal Pins Copper Base 0.40 0.34 = 0.2 0.32 0.23 = 0.05 0.10 11 10 1.5 4 9 Signal 6 8 7 Terminals Power Terminals 3 = 0.10 2 0.23 5 0.75 1 0.27 0.6 2.60 3.62 0.3 221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 World Wide Web Site - http://www.sensitron.com E-Mail Address - [email protected] SPXXMXXX-XXX DATA SHEET 658, REV. SCHEMATIC DIAGRAM (for SPCXMxxx-xxx) 5 6 4 3 1 2 4 1 2 14 13 12 15 7 10 3 5 6 9 3 16 12 4 5 9 10 11 12 13 11 2 1 11 13 1 10 9 14 14 1 1 6 Schematic for SPC4Mxxx-xxx Schematic for SPC6Mxxx-xxx Schematic for SPC8Mxxx-xxx PACKAGE OUTLINE (for SPC4Mxxx-xxx, SPC8Mxxx-xxx, SPC6Mxxx-xxx) (All dimensions are in inches) 0.50 min. 0.093 0.40 F=0.125 x4 1 F=0.04 x16 0.15 0.20 2 16 14 15 13 3 12 4 11 5 7 10 6 8 9 1.15 0.9 0.38 1.01 1.4 1.92 221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 World Wide Web Site - http://www.sensitron.com E-Mail Address - [email protected] SENSITRON SEMICONDUCTOR TECHNICAL DATA DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement. 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. 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