COMCHIP SS110-G

SMD Schottky Barrier Rectifier
SS12-G THRU SS110-G
Reverse Voltage: 20~100 Volts
Forward Current: 1.0 Amp
Features
DO-214AC (SMA)
Ideal for surface mount application
Easy pick and place
Plastic package has Underwriters Lab.
Flammability classification 94V-0
Built-in strain relief
Low forward voltage drop
0.067(1.70)
0.051(1.29)
0.110(2.79)
0.086(2.18)
0.180(4.57)
0.160(4.06)
Mechanical Data
0.012(0.31)
0.006(0.15)
Case: JEDEC DO-214AC molded plastic
Terminal: Solderable per MIL-STD-750 method
2026 guaranteed
Polarity: Color band denotes cathode end
Mounting position: Any
Weight: 0.064 gram
0.091(2.31)
0.067(1.70)
0.059(1.50)
0.035(0.89)
0.209(5.31)
0.185(4.70)
0.008(0.20)
0.004(0.10)
Dimensions in inches and (millimeters)
Maximum Rating and Electrical Characteristics
Symbol
SS12-G
SS14-G
SS16-G
SS18-G
SS110-G
Unit
Max. Repetitive Peak Reverse Voltage
V RRM
20
40
60
80
100
V
Max. DC Blocking Voltage
V DC
20
40
60
80
100
V
Max. RMS Voltage
V RMS
14
28
42
56
70
V
Parameter
Peak Surge Forward Current
8.3ms single half sine-wave
superimposed on rate load
( JEDEC method )
I FSM
35
A
Max. Average Forward Current
Io
1.0
A
Max. Instantaneous Forward Current
at 1.0 A
VF
Max. DC Reverse Current at Rated DC
Blocking Voltage
Ta=25 C
IR
0.70
0.85
0.5
10
Ta=100 C
Max. Thermal Resistance (Note 1)
0.50
5
R
JA
88
R
JL
20
V
.
mA
C/W
Operating Junction Temperature
Tj
-50 to +125
C
Storage Temperature
T STG
-65 to +150
C
Note 1: Thermal resistance from junction to ambient and junction to to lead P.C.B. Mounted on 0.2 x 0.2 copper pad areas
ā€œ-Gā€ suffix designates RoHS compliant Version
SMD Schottky Barrier Rectifier
Rating and Characteristic Curves (SS12-G Thru SS110-G)
Fig.2 - Forward Characteristics
Fig. 1 - Reverse Characteristics
100
Forward Current ( A )
Reverse Current ( mA )
100
10
1
Tj=75 C
CDBA120-140
CDBA160
10
CDBA180-1100
1
0.1
0.1
Tj=25 C
Pulse width 300uS
4% duty cycle
Tj=25 C
0.01
0.01
0
20
40
60
80
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7
100 120 140 160 180 200
1.9 2.1
Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Junction Capacitance
Fig. 4 - Current Derating Curve
350
=1MHz and applied
4VDC reverse voltage
00
11
0
14
0
0.4
0.2
0
0.01
0.1
1.0
10
100
Fig. 5 - Non repetitive forward
surge current
50
8.3mS Single Half Sine
Wave JEDEC methode
40
30
Tj=25 C
20
10
0
1
5
10
20
40
60
80
100
120
140
Ambient Temperature ( C)
Reverse Voltage (V)
Peak surge Forward Current ( A )
16
0
0.6
0-
50
BA
100
0.8
12
150
CD
200
1.0
BA
Average Forward Current ( A )
250
1.2
CD
Junction Capacitance (pF)
300
50
Number of Cycles at 60Hz
1 00
160