SMD Schottky Barrier Rectifier SS32-G THRU SS310-G Forward Current: 3.0 Amp Reverse Votlage: 20 ~ 100 Volts Features Ideal for surface mount applications Easy pick and place Plastic packages has Underwriters lab. Flammability classification 94V-0 Built-in strain relief Low forward voltage drop SMC/DO-214AB 0.124(3.15) 0.108(2.75) 0.245(6.22) 0.220(5.59) 0.280(7.11) Mechanical Data 0.260(6.60) Case: JEDEC DO-214AB molded plastic Epoxy: UL 94-0 rate flame retardant Terminal: Solderable per MIL-STD-750 method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight: 0.21 gram 0.012(0.31) 0.006(0.15) 0.103(2.62) 0.079(2.00) 0.050(1.27) 0.030(0.76) 0.008(0.20) 0.0203(0.10) 0.320(8.13) 0.305(7.75) Dimensions in inches and (millimeter) Maximum Rating and Electrical Characteristics Parameter Symbol SS32-G SS34-G SS36-G SS310-G Unit Max.Repetitive Peak Reverse Voltage V RRM 20 40 60 100 V Max. DC Blocking Voltage V DC 20 40 60 100 V Max. RMS Voltage V RMS 14 28 42 70 V Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) I FSM 80 A Max. Average Forward Current Io 3.0 A Max. Instantaneous Forward Current at 2.0 A VF Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 C IR Ta=100 C Max. Thermal Resistance (Note 1) 0.75 0.50 0.5 20 R R JA JL 0.85 V mA 10 50 10 C/W Operating Junction temperature Tj -50 to +125 C Storage Temperature T STG -65 to +150 C “-G” suffix designates RoHS compliant Version SMD Schottky Barrier Rectifier Rating and Characteristic Curves (SS32-G Thru SS310-G) Fig. 1 - Reverse Characteristics Fig.2 - Forward Characteristics 100 100 Forward Current ( A ) Reverse Current ( mA ) SS320-G~SS340-G 10 1 Tj=75 C 10 SS360-G SS310-G 1 0.1 0.1 Tj=25 C Pulse width 300uS 4% duty cycle Tj=25 C 0.01 0.01 0 20 40 60 80 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 100 120 140 160 180 200 1.9 2.1 Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Junction Capacitance Fig. 4 - Current Derating Curve =1MHz and applied 4VDC reverse voltage S3 10 -G -G 40 1.0 10 100 1.0 0.5 100 8.3mS Single Half Sine Wave JEDEC methode 80 60 Tj=25 C 40 20 0 5 10 Reverse Voltage (V) 20 40 60 80 100 120 140 Ambient Temperature ( C) Fig. 5 - Non Repetitive Forward Surge Current Peak surge Forward Current ( A ) ~S 1.5 0 0.1 Reverse Voltage (V) 1 S3 0 0.01 0-G 100 2.0 ~S 200 36 300 2.5 0-G 400 SS 500 3.0 32 Av e r a g e F o r w a r d C u r r e n t ( A ) 600 SS Junction Capacitance (pF) 700 50 1 00 160