TK25E06K3
MOSFETs
Silicon N-channel MOS (U-MOS)
TK25E06K3
1. Applications
•
Switching Voltage Regulators
2. Features
(1)
Low drain-source on-resistance: RDS(ON) = 14 mΩ (typ.)
(2)
High forward transfer admittance: |Yfs| = 50 S (typ.)
(3)
Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)
(4)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
1: Gate
2: Drain (heatsink)
3: Source
TO-220
unless otherwise specified)
4. Absolute Maximum Ratings (Note) (Ta = 25
25
Characteristics
Drain-source voltage
Drain-gate voltage
(RGS = 20 kΩ)
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Unit
V
VDSS
60
VDGR
60
VGSS
±20
ID
25
(Note 1)
IDP
75
PD
60
W
EAS
54
mJ
IAR
25
A
(Note 2)
Avalanche current
Repetitive avalanche energy
Rating
(Note 1)
(Tc = 25)
Single-pulse avalanche energy
Symbol
EAR
6
mJ
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to 150
Note:
(Note 3)
A
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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5. Thermal Characteristics
Characteristics
Symbol
Max
Unit
Channel-to-case thermal resistance
Rth(ch-c)
2.08
/W
Channel-to-ambient thermal resistance
Rth(ch-a)
83.3
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 25 V, Tch = 25 (initial), L = 0.11 mH, RG = 25 Ω, IAR = 25 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature
Note:
This transistor is sensitive to electrostatic discharge and should be handled with care.
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6. Electrical Characteristics
unless otherwise specified)
6.1. Static Characteristics (Ta = 25
25
Characteristics
Symbol
Gate leakage current
Test Condition
IGSS
VGS = ±20 V, VDS = 0 V
Drain cut-off current
Min
Typ.
Max
Unit
±1
µA
IDSS
VDS = 60 V, VGS = 0 V
10
Drain-source breakdown voltage
V(BR)DSS
ID = 10 mA, VGS = 0 V
60
Drain-source breakdown voltage
V(BR)DSX
ID = 10 mA, VGS = -20 V
35
Gate threshold voltage
V
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
Drain-source on-resistance
RDS(ON)
VGS = 10 V, ID = 13 A
14
18
mΩ
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 13 A
25
50
S
Min
Typ.
Max
Unit
1255
pF
unless otherwise specified)
6.2. Dynamic Characteristics (Ta = 25
25
Characteristics
Symbol
Input capacitance
Ciss
Test Condition
VDS = 10 V, VGS = 0 V, f = 1 MHz
Reverse transfer capacitance
Crss
175
Output capacitance
Coss
235
Switching time (rise time)
tr
9
Switching time (turn-on time)
ton
21
tf
8
toff
29
Min
Typ.
Max
Unit
29
nC
Switching time (fall time)
Switching time (turn-off time)
See Figure 6.2.1.
ns
Fig. 6.2.1 Switching Time Test Circuit
unless otherwise specified)
25
6.3. Gate Charge Characteristics (Ta = 25
Characteristics
Symbol
Total gate charge (gate-source plus
gate-drain)
Qg
Test Condition
VDD ≈ 48 V, VGS = 10 V, ID = 25 A
Gate-source charge
Qgs
16
Gate-drain charge
Qgd
13
6.4. Source-Drain Characteristics (Ta = 25
unless otherwise specified)
25
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
A
Reverse drain current (DC)
(Note 4)
IDR
25
Reverse drain current (pulsed)
(Note 4)
IDRP
75
Diode forward voltage
VDSF
IDR = 25 A, VGS = 0 V
-1.5
V
Reverse recovery time
trr
35
ns
Reverse recovery charge
Qrr
IDR = 25 A, VGS = 0 V
-dIDR/dt = 50 A/µs
17
nC
Note 4: Ensure that the channel temperature does not exceed 150.
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7. Marking
Fig. 7.1 Marking
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8. Characteristics Curves (Note)
Fig. 8.1 ID - VDS
Fig. 8.2 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.4 VDS - VGS
Fig. 8.5 |Yfs| - ID
Fig. 8.6 RDS(ON) - ID
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Fig. 8.7 RDS(ON) - Ta
Fig. 8.8 IDR - VDS
Fig. 8.9 Capacitance - VDS
Fig. 8.10 Vth - Ta
Fig. 8.11 PD - Tc
(Guaranteed Maximum)
Fig. 8.12 Dynamic Input/Output Characteristics
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Fig. 8.13 rth/Rth(ch-c) - tw
(Guaranteed Maximum)
Fig. 8.15 EAS - Tch
(Guaranteed Maximum)
Fig. 8.14 Safe Operating Area
(Guaranteed Maximum)
Fig. 8.16 Test Circuit/Waveform
Note:
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
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Package Dimensions
Unit: mm
Weight: 1.93 g (typ.)
Package Name(s)
TOSHIBA: 2-10X1A
Nickname: TO-220
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