UNISONIC TECHNOLOGIES CO., LTD UG8J NPN EPITAXIAL SILICON TRANSISTOR EMITTER COMMON (DUAL DIGITAL TRANSISTORS) FEATURES * Two DTC143Z chips in a SOT-353 package. * Mounting cost and area can be cut in half. 3 2 1 5 4 STRUCTURE * Epitaxial planar type * NPN silicon transistor (Built-in resistor type) SOT-353 *Pb-free plating product number: UG8JL ORDERING INFORMATION Order Number Normal Lead Free Plating UG8J-AL5-0-R UG8J-AL5-0-R UG8JL-AL5-0-R Package SOT-353 (1)Packing Type (2)Pin Assignment (3)Package Type (4)Lead Plating 1 B1 Pin Assignment 2 3 4 E1,E2 B2 C2 5 C1 Packing Tape Reel (1) R: Tape Reel (2) refer to Pin Assignment (3) AL5: SOT-353 (4) L: Lead Free Plating, Blank: Pb/Sn MARKING INFORMATION UG8J Lead Plating www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 3 QW-R222-002,A UG8J NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25℃) PARAMETER SYMBOL VCC Supply Voltage Input Voltage UNIT V IOUT IC(MAX) RATINGS 50 30 -5 100 100 PD 150 (Note1) mW TJ TSTG +150 -40 ~ +150 ℃ ℃ VIN Output Current Total Power Dissipation Junction Temperature Storage Temperature V mA Note 1. *120mW per element must not be exceeded. 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃) PARAMETER Input Voltage Output Voltage Input Current Output Current DC Current Gain Transition Frequency Input Resistance Resistance Ratio Note * Transition frequency of the device. SYMBOL VI(OFF) VI(ON) VO(ON) IIN IO(OFF) GI fT R1 R2/R1 TEST CONDITIONS VCC=5V, IOUT=100µA VOUT=0.3V, IOUT=5mA IOUT=5mA, IIN=0.25mA VIN=5V VCC=50V, VIN=0V VOUT=5V, IOUT=10mA VCE=10V, IE=-5mA, f=100MHz* MIN 1.3 TYP MAX UNIT 0.5 V 0.1 0.3 1.8 0.5 V mA µA 80 3.29 8 250 MHz 4.7 6.11 KΩ 10 12 EQUIVALENT CIRCUIT (The following characteristic apply to both DTr1 and DTr2) (3) R1 DTr2 R2 (2) (1) R1 DTr1 R2 (4) (5) R1 =4.7kΩ R2 =4.7kΩ UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R222-002,A UG8J NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS Input Voltage vs. Output Current (ON Characteristics) 100 Input Voltage, VI(ON) (V) Output current, I OUT (A) VOUT=0.3V 50 20 10 5 2 Output Current vs. Input Voltage (OFF Characteristics) Ta=-20℃ 25℃ 100℃ 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m 10m 5m 2m 1m 500µ 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 Output Current, I OUT (A) 1k DC Current Gain, GI 500 200 Ta=100℃ 25℃ -20℃ VOUT=5V 100 50 20 10 5 2 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m Output Current, I OUT (A) Outptut Voltage, VO(ON) (V) DC Current Gain vs. Output Current VCC=5V Ta=100℃ 25℃ -20℃ 0.5 1 1.5 2.0 2.5 3.0 Input Voltage, VI(OFF) (V) Output Voltage vs. Output Current 1 Ta=100℃ IOUT/I IN=20 500m 25℃ 200m -20℃ 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m Output Current, I OUT (A) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R222-002,A