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Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2354 DUAL N-CHANNEL MOSFET OUTLINE DRAWING (Unit: mm) DESCRIPTION The μ PA2354 is a Dual N-channel MOSFET designed for Lithium-Ion battery protection circuit. Ecologically Flip chip MOSFET for Lithium-Ion battery Protection (EFLIP). TOP VIEW • • • 0.65 G2 1.33 ± 0.02 FEATURES • BOTTOM VIEW 1.33 ± 0.02 Monolithic Dual MOSFET Connecting the Drains on the circuit board is not required because the Drains of the FET1 and the FET2 are internally connected. 1.8 V drive available and low on-state resistance RSS(on)1 = 42.0 mΩ MAX. (VGS = 4.5 V, IS = 2.0 A) RSS(on)2 = 49.0 mΩ MAX. (VGS = 3.1 V, IS = 2.0 A) RSS(on)3 = 57.0 mΩ MAX. (VGS = 2.5 V, IS = 2.0 A) RSS(on)4 = 99.0 mΩ MAX. (VGS = 1.8 V, IS = 2.0 A) Built-in G-S protection diode against ESD Pb-free Bump S2 0.65 G1 S1 Dot area (For in-house) 1-pin index mark S1 4 - φ 0.37 // 0.1 S S1: Source 1 G1: Gate 1 G2: Gate 2 S2: Source 2 0.2 ± 0.02 S 0.28 ± 0.03 0.08 S ORDERING INFORMATION PART NUMBER μ PA2354T1G-E4-A PACKAGE Note 4-pin EFLIP Note Pb-free (This product does not contain Pb in the external electrode and other parts.) EQUIVALENT CIRCUIT Remark "-E4" indicates the unit orientation (E4 only). ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Source to Source Voltage (VGS = 0 V) Gate to Source Voltage (VSS = 0 V) Note1 Source Current (DC) Note2 Source Current (pulse) Note1 Total Power Dissipation (2 units) Channel Temperature Storage Temperature VSSS VGSS IS(DC) IS(pulse) PT Tch Tstg 24 ±8 ±4.0 ±33 0.75 150 −55 to +150 V V A A W °C °C Notes 1. Mounted on BT resin board of 40.5 mm x 25 mm x 1.5 mmt 2. PW ≤ 100 μs, Duty Cycle ≤ 1% FET1 FET2 Gate 1 Gate 2 Gate Protection Diode Source 1 Source 2 Body Diode Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G19316EJ1V0DS00 (1st edition) Date Published February 2009 NS Printed in Japan 2009 μ PA2354 ELECTRICAL CHARACTERISTICS (TA = 25°C) These are common to FET1 and FET2. CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT 10 μA ±10 μA 1.2 V Zero Gate Voltage Source Current ISSS VSS = 24 V, VGS = 0 V, TEST CIRCUIT 1 Gate Leakage Current IGSS VGS = ±12 V, VSS = 0 V, TEST CIRCUIT 2 Gate to Source Cut-off Voltage VGS(off) VSS = 10.0 V, IS = 1.0 mA, TEST CIRCUIT 3 0.4 | yfs | VSS = 10.0 V, IS = 2.0 A, TEST CIRCUIT 4 2.2 RSS(on)1 VGS = 4.5 V, IS = 2.0 A, TEST CIRCUIT 5 23.0 35.0 42.0 mΩ RSS(on)2 VGS = 3.1 V, IS = 2.0 A, TEST CIRCUIT 5 26.5 40.0 49.0 mΩ RSS(on)3 VGS = 2.5 V, IS = 2.0 A, TEST CIRCUIT 5 29.0 43.0 57.0 mΩ 32.0 57.0 99.0 mΩ Note Forward Transfer Admittance Source to Source On-state Resistance Note 0.7 S RSS(on)4 VGS = 1.8 V, IS = 2.0 A, TEST CIRCUIT 5 Input Capacitance Ciss VSS = 10.0 V, VGS = 0 V, f = 1.0 MHz 720 pF Output Capacitance Coss TEST CIRCUIT 7 130 pF Reverse Transfer Capacitance Crss 80 pF Turn-on Delay Time td(on) VDD = 20.0 V, IS = 4.0 A, 2.2 μs Rise Time tr VGS = 4.0 V, RG = 6.0 Ω, 4.4 μs Turn-off Delay Time td(off) TEST CIRCUIT 8 9.2 μs Fall Time tf 9.7 μs Total Gate Charge QG 6.0 nC 0.9 V VDD = 16 V, VG1S1 = 4.0 V, IS = 4.0 A, TEST CIRCUIT 9 Body Diode Forward Voltage Note IF = 4.0 A, VGS = 0 V, TEST CIRCUIT 6 VF(S-S) Note Pulsed Both the FET1 and the FET2 are measured. Test circuits are example of measuring the FET1 side. TEST CIRCUIT 2 IGSS TEST CIRCUIT 1 ISSS S2 S2 When FET1 is G2 measured, between G2 GATE and SOURCE A of FET2 are shorted. G1 VSS AA VGS S1 G1 S1 TEST CIRCUIT 3 VGS(off) TEST CIRCUIT 4 | yfs | S2 When FET1 is S2 ΔIS/ΔVGS G2 G2 measured, between A A AA GATE and SOURCE of FET2 are shorted. G1 G1 VSS VGS S1 2 VSS VGS S1 Data Sheet G19316EJ1V0DS μ PA2354 TEST CIRCUIT 6 VF(S-S) When FET1 is measured, FET2 is added VGS +4.5 V. TEST CIRCUIT 5 RSS(on) S2 VSS/IS G2 S2 4.5 V IF G2 IS VSS G1 VSS V G1 VGS V VGS =0V S1 S1 TEST CIRCUIT 7 Ciss Coss Crss S2 G2 S2 S2 VSS Capacitance Bridge G1 G2 G2 VSS VSS G1 G1 Capacitance Bridge Capacitance Bridge S1 S1 S1 TEST CIRCUIT 8 td(on), tr, td(off), tf S2 VGS G2 VGS V Wave Form RL 0 VGS 10% 90% VSS G1 PG. VGS 0 VSS RG Wave Form VDD τ S1 VSS 90% 90% 10% 10% 0 td(on) tr td(off) ton tf toff τ = 1 μs Duty Cycle ≤ 1% TEST CIRCUIT 9 QG S2 A A G2 IG = 2 mA RL G1 PG. 50 Ω VDD S1 Data Sheet G19316EJ1V0DS 3 μ PA2354 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 1 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 Mounted on BT resin board of 40.5 mm x 25 mm x 1.5 mmt 0.8 0.6 0.4 0.2 0 0 0 25 50 75 100 125 150 175 0 TA - Ambient Temperature - °C 25 50 75 100 IS - Source Current - A 1000 ) ( on SS GS R (V 10 d it e Lim V ) .5 4 = PW = 1i 0 μ s IS(pulse) 1i m i 1i 0 s 1i 00 μ s ms i 1 1i 0 IS(DC) 0m i s DC 0.1 0.01 Single Pulse PD (FET1) : PD (FET2) = 1 : 1 Mounted on BT resin board of 40.5 mm x 25 mm x 1.5 mmt 0.1 1 10 100 VSS - Source to Source Voltage - V rth(ch-A) - Transient Thermal Resistance - °C/W TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 Mounted on BT resin board of 40.5 mm x 25 mm x 1.5 mmt 100 Mounted on ceramic board of 2 50 cm x 1.0 mmt 10 1 Single Pulse PD (FET1) : PD (FET2) = 1 : 1 0.1 1m 10 m 100 m 1 10 PW - Pulse Width - s 4 150 TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 125 Data Sheet G19316EJ1V0DS 100 1000 175 μ PA2354 SOURCE CURRENT vs. SOURCE TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 40 100 30 3.1 V VGS = 4.5 V IS - Source Current - A IS - Source Current - A TEST CIRCUIT 5 Pulsed 2.5 V 20 10 1.8 V 0 10 TA = 125°C 75°C 25°C −25°C 1 0.1 TEST CIRCUIT 3 VSS = 10.0 V Pulsed 0.01 0.001 0 0.5 1 1.5 2 2.5 3 0 0.5 VSS - Source to Source Voltage - V 1.2 1 0.8 0.6 TEST CIRCUIT 3 VSS = 10.0 V IS = 1.0 mA 0 -50 0 50 100 150 100 TA = −25°C 25°C 75°C 125°C 10 1 TEST CIRCUIT 4 VSS = 10.0 V Pulsed 0.1 0.01 0.1 Tch - Channel Temperature - °C TEST CIRCUIT 5 Pulsed VGS = 1.8 V 2.5 V 40 20 0 0.01 VGS = 3.1 V 4.5 V 0.1 1 10 IS - Source Current - A 10 100 SOURCE TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RSS(on) - Source to Source On-state Resistance - mΩ RSS(on) - Source to Source On-state Resistance - mΩ 100 60 1 IS - Source Current - A SOURCE TO SOURCE ON-STATE RESISTANCE vs. SOURCE CURRENT 80 2 FORWARD TRANSFER ADMITTANCE vs. SOURCE CURRENT | yfs | - Forward Transfer Admittance - S VGS(off) - Gate to Source Cut-off Voltage - V 1.4 0.2 1.5 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 0.4 1 100 TEST CIRCUIT 5 IS = 2.0 A Pulsed 80 60 40 20 0 Data Sheet G19316EJ1V0DS 0 1 2 3 4 5 6 7 VGS - Gate to Source Voltage - V 5 μ PA2354 CAPACITANCE vs. SOURCE TO SOURCE VOLTAGE 1000 100 Ciss Ciss, Coss, Crss - Capacitance - pF RSS(on) - Source to Source On-state Resistance - mΩ SOURCE TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 80 VGS = 1.8 V 2.5 V 60 40 TEST CIRCUIT 5 IS = 2.0 A Pulsed VGS = 3.1 V 4.5 V 20 Coss Crss TEST CIRCUIT 7 VGS = 0 V f = 1.0 MHz 10 0 -50 0 50 100 0.1 150 100 Tch - Channel Temperature - °C SWITCHING CHARACTERISTICS DYNAMIC INPUT CHARACTERISTICS VGS - Gate to Source Voltage - V td(off) 10 tf tr 1 td(on) TEST CIRCUIT 8 VDD = 20.0 V VGS = 4.0 V RG = 6.0 Ω 0.1 VDD = 16 V 10 V 4V 3 2 1 TEST CIRCUIT 9 IS = 4.0 A 0 1 10 100 0 SOURCE TO SOURCE DIODE FORWARD VOLTAGE 100 1.8 V 10 VGS = 0 V 1 0.1 TEST CIRCUIT 6 Pulsed 0.01 0 0.5 1 1.5 1 2 3 4 QG - Gate Charge - nC IS - Source Current - A IF - Diode Forward Current - A 10 4 0.1 2 VF(S-S) - Source to Source Voltage - V 6 1 VSS - Source to Source Voltage - V 100 td(on), tr, td(off), tf - Switching Time - μs 100 Data Sheet G19316EJ1V0DS 5 6 μ PA2354 • The information in this document is current as of February, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1