WEITRON WSD751G

WSD751G
Surface Mount Schottky Barrier Diodes
SMALL SIGNAL
SCHOTTKY DIODES
30m AMPERES
40 VOLTS
P b Lead(Pb)-Free
Feature:
* Extrmely High Switching Speed.
* Low Forward Voltage and Low Reverse Current.
* High Reliability.
* Schottky Barrier Diodes Encapsulated in a SOD-723 Package.
1
Description:
2
These schottky barrier diodes are designed for high speed
switching applications circuit protection, and voltage clamping,
Extremely low forward voltage reduces conduction loss,
Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
SOD-723
SOD-723 Outline Dimensions
Dim
A
B
C
D
E
J
K
SOD-723
Min
0.95
0.55
0.45
0.24
0.15
0.10
1.35
Max
1.05
0.65
0.55
0.30
0.25
0.16
1.45
PIN 1. CATHODE
2. ANODE
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Rev.A 03-Aug-09
WSD751G
Maximum Ratings (TA=25˚C Unless otherwise noted)
Symbol
Value
Unit
VRM
40
V
DC Reverse Voltage
VR
30
V
Average Rectifier Forward Current
IO
30
mA
IFSM
200
mA
RθJA
600
°C/W
Power Dissipation
PD
150
mW
Operation Junction Temperature Range
TJ
125
˚C
Tstg
-40 to +125
˚C
Characteristic
Peak Reverse Voltage
Peak Forward Surge Current
(1)
Thermal Resistance, Junction to Ambient
Storage Temperature Range
Note.1 : 60Hz, 1cyc
Electrical Characteristics
(TA=25˚C Unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Forward Voltage
IF=1.0mA
VF
-
-
0.37
V
Reverse Leakage
VR=30V
IR
-
-
0.5
µA
Capacitance Between Terminals
VR=1.0V, f=1MHz
CT
-
2.0
-
pF
Device Marking
Item
Marking
WSD751G
5
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Eqivalent Circuit diagram
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Rev.A 03-Aug-09
WSD751G
Electrical Characteristic Curves
1000m
TA=125°C
10µ
TA=125°C
10m
REVERSE CURRENT : IR (A)
FORWARD CURRENT : IF ( A)
100µ
Typ.
pulse measurement
100m
TA=75°C
1m
TA=25°C
100µ
TA= -25°C
10µ
1µ
°
(TA=25°C)
0
0.2
0.4
0.6
0.8
1.0
1.2
1µ
TA=25°C
100n
TA= -25°C
10n
1n
1.4
TA=75°C
0
5
10
15
20
25
30
35
REVERSE VOLTAGE : VR (V)
FORWARD VOLTAGE : VF (V)
FIG.2 Reverse Characteristics
FIG.1 Forward Characteristics
100
CAPACITANCE BETWEEN TERMINALS : CT (pF)
TA = 25°C
50
f = 1MHz
20
10
5
2
1
0
2
4
6
8
10
12
14
REVERSE VOLTAGE : VR (V)
FIG.3 Capacitance Between Terminals Characteristics
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Rev.A 03-Aug-09