TOREX XC9119D10AML

XC9119D10A Series
ETR0408_004
1MHz, PWM Controlled,
Step-Up DC/DC Converter, Ceramic Capacitor Compatible
■GENERAL DESCRIPTION
The XC9119D01A series is 1MHz, PWM controlled step-up DC/DC converter, designed to allow the use of ceramic
capacitors. With a built-in 2.0Ω switching transistor, the XC9119D01A series can easily provide a step-up operation by using
only a coil, a diode, a capacitor, and a resistor, connected externally.
Since output voltage up to 19.5V (Maximum Lx operating voltage: 20V) can be derived with reference voltage supply of 1.0V
(±2.0%) and external components, the series can easily supply high voltage for various general-purpose power supplies, LCD
panels and organic EL displays.
With a high switching frequency of 1.0MHz, a low profile and small board area solution can be achieved using a chip coil and
an ultra small ceramic output capacitor.
With the current limit function (400mA (TYP.): VDD=3.6V), a peak current, which flows through built-in driver transistors can be
limited. Soft-start time can be adjusted by external resistors and capacitors. The stand-by function enables the output to
be turned off (CE ’L’), that is, the supply current will be less than 1.0μA.
■FEATURES
■APPLICATIONS
●Organic electroluminescene display (OELD)
●Power supplies for LCD panels
Operating Voltage Range : 2.5V ~ 6.0V
Output Voltage Range
: Up to 19.5V externally set-up
: Reference voltage 1.0V +2.0%
●Various general-purpose power supplies
Oscillation Frequency
: 1.0MHz±20%
ON Resistance
: 2.0Ω (VDD: 3.6V, VDS: 0.4V)
Efficiency
: 86%
(VOUT=15V, VDD=3.6V, IOUT=10mA)
Control
: PWM control
Stand-by function
: STB=1.0μA (MAX.)
Load Capacitor
: Low ESR cap. such as a
ceramic capacitor compatible
■TYPICAL APPLICATION CIRCUIT
Ultra Small Packages
: SOT-25, USP-6C
Lx Limit Current
: 400mA (VDD:3.6V)
■TYPICAL PERFORMANCE
CHARACTERISTICS
○Efficiency vs. Output Current
XC9119D10A
VIN
RSS
220kΩ
CIN
4.7uF
CSS
0.1uF
V DD
Lx
CE/SS
RFB1
510kΩ
C FB
620pF
CL
10uF
FB
V SS
VOUT=15V
(up to 19.5V)
RFB2
36kΩ
Efficiency: EFFI(%)
SD
XB01SB04A2BR
L:22uH
CDRH4D18C
100
90
80
70
60
50
40
30
20
10
0
6V
5V
4.2V
3.6V
VIN=2.5V
2.7V 3V
T a=25 o C
0.1
1
10
100
1000
Output Current: IOU T (mA)
1/18
XC9119D10A Series
■PIN CONFIGURATION
*The dissipation pad for the USP-6C
package should be solder-plated in
recommended mount pattern and metal
masking so as to enhance mounting
strength and heat resistance. If the pad
needs to be connected to other pins, it
should be connected to the VSS pin.
USP-6C
(BOTTOM VIEW)
SOT-25
(TOP VIEW)
■PIN ASSIGNMENT
PIN NUMBER
SOT-25
USP-6C
1
2
3
4
5
-
2
3
1
6
4
5
PIN NAME
FUNCTION
Lx
VSS
FB
CE/SS
VDD
NC
Switch
Ground
Voltage Feedback
Chip Enable/ Soft Start
Power Input
No Connection
■CE PIN FUNCTION
CE/SS PIN
OPERATIONAL STATE
H
L
Operation
Shut-down
■PRODUCT CLASSIFICATION
●Ordering Information
XC9119D12345
DESIGNATOR
DESCRIPTION
SYMBOL
12
Reference Voltage
10
: FB voltage
3
Oscillation Frequency
A
: 1MHz
4
Package
M
: SOT-25
E
: USP-6C
5
Device Orientation
R
: Embossed tape, standard feed
L
: Embossed tape, reverse feed
2/18
DESCRIPTION
XC9119D10A
Series
■BLOCK DIAGRAM
Phase
Compensation
VDD
Current
Limit & Feedback
Error Amp.
FB
LX
+
+
-
logic
Vref with
Soft-start,
CE
Buffer
Driver
PWM Comparator
VSS
Ramp Wave
Generator, OSC
CE/SS
■ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VDD Pin Voltage
VDD
VSS – 0.3 ~ 7.0
V
Lx Pin Voltage
VLx
VSS – 0.3 ~ 22.0
V
FB Pin Voltage
VFB
VSS – 0.3 ~ 7.0
V
CE Pin Voltage
VCE
VSS – 0.3 ~ 7.0
V
Lx Pin Current
ILx
1000
mA
Power Dissipation
SOT-25
USP-6C
Pd
RATINGS
Ta = 25OC
UNITS
250
100
mW
Operating Temperature Range
Topr
- 40 ~ + 85
O
C
Storage Temperature Range
Tstg
- 55 ~ +125
O
C
3/18
XC9119D10A Series
■ELECTRICAL CHARACTERISTICS
XC9119D10AMR
Ta = 25 OC
CIRCUI
UNIT
T
PARAMETER
SYMBOL
CONDITIONS
MIN.
TYP.
MAX.
FB Voltage
VFB
△VFB/
△VIN・VFB
VDD
-
0.980
1.000
1.020
V
①
2.5<VDD<6.0V
-
0.05
0.20
%/V
①
-
2.5
-
6.0
V
①
Operation Start-up
Voltage
VST1
IOUT=0mA
-
-
2.5
V
②
Supply Current 1
Supply Current 2
IDD1
IDD2
FB=2.0V
-
450
55
700
110
μA
μA
②
②
Stand-by Current
Oscillation Frequency
ISTB
FOSC
VCE=0V
Same as IDD1
0.8
1.0
1.0
1.2
μA
MHz
③
②
Maximum Duty Ratio
MAXDTY
86
92
98
%
②
Efficiency (*1)
EFFI
Same as IDD1
VIN=VDD=3.6V, VOUT=15V,
IOUT=10mA
-
86
-
%
①
Current Limit
Lx Operating Voltage
Range
Lx Switch On Resistance
ILIM
VDD=3.6V
310
400
750
mA
④
VLx
VOUT=18V
-
-
20.0
V
①
RSWON
VDD=3.6V, VLx=0.4V, Rpull=10Ω
-
2.0
4.0
Ω
α
Lx Leak Current
ILxL
-
-
1
μA
③
CE “High” Voltage
VCEH
0.65
-
-
V
②
CE “Low” Voltage
VCEL
Same as ISTB
Applied voltage to CE when Lx pin
voltage holding “H””L” level
Applied voltage to CE when Lx pin
voltage holding “H” level
-
-
0.20
V
②
Line Regulation
Supply Voltage
Soft-Start
Threshold Voltage
CE “High” Current
VSST
FB=0.95V, Applied voltage to CE
when Lx voltage holding “H””L” level
1.3
1.6
1.9
V
②
ICEH
Same as IDD2
-0.1
-
0.1
μA
③
CE “Low” Current
FB “High” Current
ICEL
IFBH
Same as ISTB
Same as IDD2
-0.1
-0.1
-
0.1
0.1
μA
μA
③
③
FB “Low” Current
IFBL
Same as ISTB
-0.1
-
0.1
μA
③
Test Condition: Unless otherwise stated, VIN=3.0V, VCE=3.0V, Vpull=5.0V, Rpull=100Ω.
NOTE:
*1: EFFI={(output voltage x output current) / (input voltage) x (input current)} x 100
■TYPICAL APPLICATION CIRCUIT
VIN
2.5V~6.0V
L
SD
VOUT
(up to 19.5V)
Vcont
(above 2.5V)
RSS
V DD
Lx
CE/SS
FB
RFB1
CIN
CSS
4/18
V SS
C FB
CL
RFB2
XC9119D10A
Series
■OPERATIONAL EXPLANATION
The XC9119D10A series consists of a reference voltage source, ramp wave circuit, error amplifier, PWM comparator, phase
compensation circuit, driver transistor, current limiter circuit and others. The series ICs compare, using the error amplifier, the
voltage of the internal reference voltage source with the feedback voltage from the FB pin. Phase compensation is performed
on the resulting error amplifier output, to input a signal to the PWM comparator to determine the turn-on time during switching.
The PWM comparator compares, in terms of voltage level, the signal from the error amplifier with the ramp wave from the ramp
wave circuit, and delivers the resulting output to the buffer drive circuit to cause the Lx pin to output a switching duty cycle.
This process is continuously performed to ensure stable output voltage. The current feedback circuit detects the N-channel
MOS driver transistor's current for each switching operation, and modulates the error amplifier output signal to provide multiple
feedback signals. This enables a stable feedback loop even when a low ESR capacitor, such as a ceramic capacitor, is used,
ensuring stable output voltage.
<Reference Voltage Source>
The reference voltage source provides the reference voltage to ensure stable output voltage of the IC.
<Ramp Wave Circuit>
The ramp wave circuit determines switching frequency. The 1MHz (TYP.) of frequency is fixed internally. Clock pulses
generated in this circuit are used to produce ramp waveforms needed for PWM operation.
<Error Amplifier>
The error amplifier is designed to monitor output voltage. The amplifier compares the reference voltage with the FB pin
voltage. When a voltage lower than the reference voltage is fed back, the output voltage of the error amplifier increases.
Gain and frequency characteristics of the error amplifier output are fixed internally as an optimize signal.
<Current Limit >
The current limit circuit of the XC9119D10A series monitors the current flowing through the N-channel MOS driver
transistor connected to the Lx pin, and features a combination of the constant-current type current limit mode and the
duty cycle limit of the next pulse.
①When the driver current is greater than a specific level, the constant-current type current limit function operates to turn
off the pulses from the Lx pin at any given timing.
②The IC controls the next pulse to be smaller than the first pulse.
Current Limit
Current Limit
IL
Lx
1
The current will be off when the coil current
reaches the value of the constant current limit.
2
Limit some duty pulses after the limit.
<CE Pin Function>
The operation of the XC9119D10A series will enter into the shut down mode when a low level signal is input to the CE
pin. During the shut down mode, the supply current is 0μA (TYP.), with high impedance at the Lx pin. The IC starts its
operation with a high level signal to the CE pin. The input to the CE pin is a CMOS input and the sink current is 0μA
(TYP.). The hysteresis between the chip enable and the chip disable is 50mV (TYP.).
<Soft-Start Time>
Soft-start function operates when capacitors and resistors are connected to the CE/SS pin. With the Vref voltage limited
by the CE/SS pin start-up voltage and applying the input to the error amps, the operation maintains a balance between
the two inputs of the error amps. and controls the Lx pin’s ON time so that it doesn’t increase more than is necessary.
Depending of current limit function, load current, step-up ratio, and external components, the IC takes about 500uS to 5mS
to attain the setting voltage after applying the CE ‘H’ voltage even though the RSS is 0Ω and a soft start capacitor CSS is not
connected. (For a numerical constant, please refer to Note on Use.) For longer soft-start time, please connect RSS and CSS.
Soft-start function operates while the CE pin voltage is between 0V to around 1.9V. Please be noted that if the CE/SS pin voltage
does not start from 0V but is in intermediate potential when the power is turned on etc., soft start function may lose an effect and
that will cause a high inrush current and ripple voltage.
5/18
XC9119D10A Series
■OPERATIONAL EXPLANATION (Continued)
<CE/SS (Pin No. 4): Chip Enable / Soft-Start Pin>
Pin No. 4 can be used as in either chip enable (CE) pin or soft-start (SS) pin. The IC takes about 5mS at most to attain the
setting voltage after starting operation (CE ‘H’) even though the RSS is 0Ω and the CSS is not connected.
Soft-start function is good for setting a longer time than the start-up time when the RSS is 0Ω and the CSS is not connected.
Soft-start operates while the CE pin voltage increases from 0V to around 1.9V. The following equation is used with the values of
Vcont voltage, the RSS and the CSS.
T = - CSS x RSS x In {(Vcont – 1.6) / Vcont}
RSS=0Ω, No CSS, VIN=3.6V, VOUT=15V, IOUT=3mA
●Start-up waveform
when the RSS is 0Ω and the CSS is not connected
1ch: VOUT
0V (1ch) ⇒
2ch: CE
0V (2ch) ⇒
Time:500uS/div.
1ch:5V/div., 2ch:2V/div.
Ex.) When CSS=0.1uF, RSS=220kΩ, Vcont=5V,
T= - 0.1e – 6 x 220e3 x In{(5-1.6)/5} = 8.48mS
CE/SS Pin
RSS
Vcont
CE
Vref
Error Amp.
CSS
Ex.) Reference Circuit 1: N-ch Open Drain
Vcont
RSS
ON/OFF
Signal
CE/SS Pin
CSS
Ex.) Reference Circuit 2: CMOS Logic (Low Supply Current)
Vcont
ON/OFF
Signal
RSS
CE/SS Pin
CSS
Ex.) Reference Circuit 3: CMOS Logic (Low Supply Current), Quick-Off
Vcont
RSS
CE/SS Pin
ON/OFF
Signal
6/18
CSS
XC9119D10A
Series
■OPERATIONAL EXPLANATION (Continued)
<Lx (Pin No. 1): Switch Pin>
Please connect the anode of an Schottky barrier diode and inductor to the Lx pin.
<FB (Pin No. 3): Voltage Feedback Pin>
The reference voltage is 1.0V (TYP.).
Output voltage is approximated by the following equation according to the value
for two resistors (RFB1 and RFB2). The sum of the two resistors should be 1MΩ or less.
VOUT = RFB1 / RFB2 + 1
Output voltage should be set as to fill VOUT<(Maximum value of VLx) – (VF of Schottky diode).
Please adjust the CFB value of the speed–up capacitor for phase compensation so that fzfb=1/(2πx CFB x RFB1) will be
about 500Hz. According to the usage, adjusting the inductance value, the load capacity value, and so on to the most
suitable operation.
Typical example:
VOUT
(V)
RFB1
(kΩ)
RFB2
(kΩ)
CFB
(pF)
3.3
5.0
7.0
10.0
15.0
18.0
300
300
180
270
510
510
130
75
30
30
36
30
1000
1000
1800
1200
510
510
<VDD (Pin No. 5): Power Supply Pin>
Please connect an input by-pass capacitor (CIN).
●Application Information
<Obtaining VDD from other source than VIN>
In case that the input voltage VIN and power source VDD in the step-up circuit are isolated, the circuit starts step-up
operations with the input voltage less than 2.5V when voltage from 2.5V to 6.0V is applied to the power source. Please
connect more than 1uF of CDD between the VDD pin and the VSS pin as close as possible.
Ex.) When VDD=3.6V, VIN=1.8V, VOUT=5.0V (RFB1=300kΩ, RFB2=75kΩ, CFB=1000pF, CL=10uF), the IC can operate up to
IOUT=40mA.
VDD
2.5V~6V
CDD
RSS
VIN
CIN
4.7uF
L
VDD
SD
Lx
RFB1
CFB
CL
10uF
FB
CE/SS
VSS
CSS
RFB2
■NOTES ON USE
1. Please do not exceed the value of stated absolute maximum ratings.
2. The DC/DC converter performance is greatly influenced by not only the ICs’ characteristics, but also by those of the
external components. Care must be taken when selecting the external components.
3. Make sure that the PCB GND traces are as thick as possible, as variations in ground potential caused by high ground
currents at the time of switching may result in instability of the IC.
4. Please mount each external component as close to the IC as possible and use thick, short connecting traces to reduce
the circuit impedance.
5. Please set up the output voltage value so that the Lx pin voltage does not exceed 20V.
7/18
XC9119D10A Series
■TEST CIRCUITS
Circuit ①
SD
L:22uH
CDRH4D18C XB01SB04A2BR
VDD
VIN
CIN
4.7uF
(ceramic)
Lx
CE/SS
CFB
1000pF
(ceramic)
FB
VSS
VCE
V
VOUT
RFB1
300kΩ
CL
4.7uF
(ceramic)
V
RL
RFB2
75kΩ
Circuit ②
Circuit ③
OSC
A
VIN
Lx
CE
FB
V IN
1uF
Rpull
A
220uF
VSS
A
Vpull
VCE
VIN
CE
VIN
1uF
VFB
Lx
FB
A
VSS
VCE
VFB
A
VLx
Circuit ④
OSC
VIN
4.7uF/10V
(ceramic)
V IN
Lx
CE
FB
10 Ω
100uF/16V
(OS capacitor)
10V
R2
4.3kΩ
R1
1.1kΩ
VSS
VCE
300Ω
2SK583
0.01uF
(ceramic)
Vpull
V
47uF/25V
(OS capacitor)
1. The measurement method of Lx On resistance RSWON
Using the circuit ②, Lx On resistance can be measured by adjusting Vpull voltage to set Lx voltage VLx x 0.4V when the
driver transistor is ON. The oscilloscope is used for measuring the Lx voltage when the driver transistor is ON.
RSWON = 0.4 / {(Vpull – 0.4) / 10}
2. The measurement method of current limit ILIM
Using the circuit ④, current limit ILIM can be calculate by the equation including Vpull voltage when FB voltage is
decreased while Vpull voltage is adjusted and Lx voltage VLx when the driver transistor is ON. The oscilloscope is used
for measuring the Lx voltage when the driver transistor is ON.
ILIM=(Vpull – VLx) / Rpull
8/18
XC9119D10A
Series
■TYPICAL PERFORMANCE CHARACTERISTICS
(1) Output Voltage vs. Output Current
VIN=VDD=VCE,L=4.7uH(CDRH4D18C)
SD:XB01B04ABR,CIN=CL=4.7uF(Ceram ic)
CFB=1000pF(Ceram ic),RFB1=300kΩ ,RFB2=75kΩ
T a=25 o C
5.2
3V
5.1
5.0
VIN=2.5V
4.9
11.0
OU T (V)
4.5V
Output Voltage: V
Output Voltage: V OU T (V)
5.3
4.8
VIN=VDD=VCE,L=22uH(CDRH4D18C)
SD:XB01B04ABR,CIN=CL=4.7uF(Ceram ic)
CFB=1200pF(Ceram ic),RFB1=270kΩ ,RFB2=30kΩ
T a=25 o C
10.5
10.0
VIN=2.5V
9.5
4.7
1
10
100
1000
0.1
Output Current: IOU T (m A)
VIN=VDD=VCE,L=22uH(CDRH4D18C)
SD:XB01B04ABR,CIN=CL=4.7uF(Ceram ic)
CFB=620pF(Ceram ic),RFB1=510kΩ ,RFB2=36kΩ
10
100
1000
15.5
15.0
VIN=6V
14.5
T a=25 o C
14.0
VIN=VDD=VCE,L=22uH(CDRH4D18C)
SD:XB01B04ABR,CIN=CL=4.7uF(Ceram ic)
CFB=620pF(Ceram ic),RFB1=510kΩ ,RFB2=30kΩ
19.0
OUT (V)
VIN=5V
VIN=2.5V,3V
1
Output Current: IOU T (mA)
Output Voltage: V
OU T (V)
Output Voltage: V
VIN=6V
9.0
0.1
16.0
VIN=5V
VIN=3V
VIN=5V
18.5
18.0
VIN=6V
VIN=2.5V,3V
17.5
T a=25 o C
17.0
0.1
1
10
100
0.1
1000
1
10
100
1000
Output Current: IOUT (mA)
Output Current IOU T (mA)
(2) Efficiency vs. Output Current
100
90
80
70
60
50
40
30
20
10
0
VOUT=10V
VIN=VDD=VCE,L=4.7uH(CDRH4D18C)
SD:XB01B04ABR,CIN=CL=4.7uF(Ceram ic)
CFB=1000pF(Ceram ic),RFB1=300kΩ ,RFB2=75kΩ
4.5V
4.2V
3.6V
VIN=2.5V
2.7V
3V
T a=25 o C
0.1
1
10
100
Output Current: IOUT (mA)
1000
Efficiency: EFFI(%)
Efficiency: EFFI(%)
VOUT=5V
100
90
80
70
60
50
40
30
20
10
0
VIN=VDD=VCE,L=22uH(CDRH4D18C)
SD:XB01B04ABR,CIN=CL=4.7uF(Ceram ic)
CFB=1200pF(Ceram ic),RFB1=270kΩ ,RFB2=30kΩ
6V
5V
4.2V
3.6V
VIN=2.5V
2.7V
3V
T a=25 o C
0.1
1
10
100
1000
Output Current: IOU T (mA)
9/18
XC9119D10A Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(2) Efficiency vs. Output Current (Continued)
VOUT=15V
VIN=VDD=VCE,L=22uH(CDRH4D18C)
SD:XB01B04ABR,CIN=CL=4.7uF(Ceram ic)
CFB=620pF(Ceram ic),RFB1=510kΩ ,RFB2=36kΩ
6V
5V
80
70
60
4.2V
3.6V
VIN =2.5V
50
40
30
20
2.7V
3V
Efficiency: EFFI(%)
Efficiency: EFFI(%)
100
90
VOUT=18V
Ta=25 oC
10
0
0.1
1
10
100
100
90
80
70
60
50
40
30
20
10
0
VIN=VDD=VCE,L=22uH(CDRH4D18C)
SD:XB01B04ABR,CIN=CL=4.7uF(Ceram ic)
CFB=620pF(Ceram ic),RFB1=510kΩ ,RFB2=30kΩ
6V
5V
4.2V
VIN=2.5V
1
VIN=VDD=VCE=3.6V,L :CDRH4D18C
SD:XB01B04ABR,CIN=CL=4.7uF(Ceram ic)
CFB=620pF(Ceram ic),RFB1=510kΩ ,RFB2=36kΩ
L=22uH
L=10uH
T a=25 o C
0.1
1
10
100
1000
VOUT=15V
Efficiency: EFFI(%)
Efficiency: EFFI(%)
VOUT=15V
L=4.7uH
10
Output Current: IOU T (mA)
Output Current: IOU T (mA)
100
90
80
70
60
50
40
30
20
10
0
3V
T a=25 o C
0.1
1000
3.6V
2.7V
100
100
90
80
VIN=VDD=VCE=3.6V,L =22uH
SD:XB01B04ABR,CIN=CL=4.7uF(Ceram ic)
CFB=620pF(Ceram ic),RFB1=510kΩ ,RFB2=36kΩ
CDRH4D18C
70
60
50
40
30
NR3010 VLF3010
20
10
0
T a=25 o C
0.1
1000
Output Current: IOU T (mA)
1
10
100
Output Current: IOU T (mA)
(3) Ripple Voltage vs. Output Current
VOUT=5V
100
VOUT=10V
VIN=VDD=VCE,L=4.7uH(CDRH4D18C)
SD:XB01B04ABR,CIN=CL=4.7uF(Ceram ic)
CFB=1000pF(Ceram ic),RFB1=300kΩ ,RFB2=75kΩ
100
VIN=VDD=VCE,L=22uH(CDRH4D18C)
SD:XB01B04ABR,CIN=CL=4.7uF(Ceram ic)
CFB=1200pF(Ceram ic),RFB1=270kΩ ,RFB2=30kΩ
T a=25 o C
o
60
4.5V
40
3.6V
4.2V
VIN=2.5V,2.7V,3V
20
0
80
VIN=2.5V,2.7V,3V,3.6V,4.2V
60
6V
40
5V
20
0
0.1
1
10
100
Output Current: IOU T (mA)
10/18
Ripple Voltage: Vr (mV)
Ripple Voltage: Vr (mV)
T a=25 C
80
1000
0.1
1
10
100
Output Current: IOU T (mA)
1000
XC9119D10A
Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(3) Ripple Voltage vs. Output Current (Continued)
VOUT=15V
VOUT=18V
VIN=VDD=VCE,L=22uH(CDRH4D18C)
SD:XB01B04ABR,CIN=CL=4.7uF(Ceram ic)
CFB=620pF(Ceram ic),RFB1=510kΩ ,RFB2=36kΩ
100
VIN=VDD=VCE,L=22uH(CDRH4D18C)
SD:XB01B04ABR,CIN=CL=4.7uF(Ceram ic)
CFB=620pF(Ceram ic),RFB1=510kΩ ,RFB2=30kΩ
100
Ripple Voltage: Vr (mV)
T a=25 o C
T a=25 o C
Ripple Voltage: Vr (mV)
80
60
VIN=2.5V,2.7V,3V,4.2V,5V
40
6V
20
0
80
60
VIN=2.5V,2.7V,3V,3.6V,4.2V,5V,6V
40
20
0
0.1
1
10
100
1000
0.1
350
FB (V)
10V
L=22uH
300
250
15V
L=22uH
200
150
100
18V
L=22uH
50
3
4
5
6
1.0
T a=85 oC
0.8
25 o C
0.6
0.4
-40 o C
0.2
0.0
0
2
0
7
(6) Supply Current 1 vs. Supply Voltage
1.5
2
D D 2 (uA)
1000
800
o
T a=85 C
600
400
25 o C
-40 o C
VCE=VDD,VFB=VDD
140
Supply Current2: I
DD1 (uA)
Supply Current1: I
1
(7) Supply Current 2 vs. Supply Voltage
VCE=VDD,VFB=0V,Vpull=5V,Rpull=100Ω
200
0.5
Chip Enable Voltage: V C E(V)
Input Voltage V IN(V)
1200
1000
VDD =3V,Vpull=5V,R pull=100 Ω
1.2
Feedback Voltage: V
Maximum Output Current: I OUT_MAX(mA)
VIN=VDD=VCE=3.6V,SD:XB01B04ABR
CIN=4.7uF(Ceram ic),CL=10uF(Ceram ic)
VOUT =5V
L=4.7uH
100
(5) Feedback Voltage vs. Chip Enable Voltage
(4) Maximum Output Current vs. Input Voltage
400
10
Output Current: IOU T (mA)
Output Current: IOU T (mA)
450
1
120
100
80
T a=85 o C
60
40
-40 o C
o
20
25 C
0
0
2
3
4
5
Supply Voltage: V DD(V)
6
2
3
4
5
6
Supply Voltage: V DD(V)
11/18
XC9119D10A Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(9) Maximum Duty Cycle vs. Supply Voltage
(8) Oscillation Frequency vs. Supply Voltage
Oscillation Frequency: Fosc(MHz)
1.2
Maximum Duty Cycle: MAXDTY (%)
VFB=0V,VCE=VDD,Rpull=100Ω ,Vpull=5V
1.3
T a=85 o C
1.1
25 o C
1
0.9
-40 o C
0.8
0.7
0.6
2
3
4
5
VFB=0V,VCE=VDD,Rpull=100Ω ,Vpull=5V
98
96
-40 o C
94
92
90
88
86
6
2
VFB=0V,VCE=0V,Rpull=100 Ω ,Vpull=5V
(Ω )
SW ON
Lx ON Resistance: R
STB ( uA )
Standby Current: I
0.8
0.6
-40 o C,25 o C
T a=85 o C
0.2
0.0
2
3
4
5
6.0
4.0
-40 o C
2.0
1.0
T a=85 o C
0.0
Current Limit: I
500
25 oC
400
Ta=85 oC
200
100
0
5
6
CIN=CL=4.7uF,L=22uH
RFB1=300kΩ ,RFB2=75kΩ ,CFB=1000pF
1.02
1.01
25 o C
1.00
0.99
-40 o C
T a=85 o C
0.98
2
3
4
5
Supply Voltage: V D D (V)
12/18
4
(13) Feedback Voltage vs. Supply Voltage
-40 oC
300
3
Supply Voltage: V D D (V)
VCE=3.0V,Rpull=10 Ω ,T r:2SK583
600
25 o C
3.0
2
Feedback Voltage: V F B (V)
LIM (mA)
700
6
5.0
6
(12) Current Limit vs. Supply Voltage
800
5
VCE=3.0V,VLx=0.4V,Rpull=10 Ω ,T r:2SK583
Supply Voltage: VDD(V)
900
4
(11) Lx ON Resistance vs. Supply Voltage
(10) Stan-by Current vs. Supply Voltage
0.4
3
Supply Voltage: V D D (V)
Supply Voltage: V D D (V)
1.0
T a=85 o C
25 o C
6
2
3
4
5
Supply Voltage: V DD(V)
6
XC9119D10A
Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(15) CE ‘L’ Voltage vs. Supply Voltage
(14) CE ‘H’ Voltage vs. Supply Voltage
VFB=0V,Vpull=5V,Rpull=100 Ω
0.50
0.55
0.45
o
25 C
T a=85 o C
0.40
VFB=0V,Vpull=5V,Rpull=100 Ω
0.65
-40 o C
CE 'L' Voltage: VCEL(V)
C EH (V)
0.60
CE 'H' Voltage: V
0.65
0.35
0.30
0.25
0.60
-40 o C
0.55
0.50
0.45
0.40
0.35
25 o C
T a=85 o C
0.30
0.25
0.20
0.20
2
3
4
5
6
2
3
4
5
6
Supply Voltage: VDD(V)
Supply Voltage: V D D (V)
(16) Load Transient Response
VOUT=5V
VOUT=5V
VIN=VDD=VCE=3.6V,L :CDRH4D18C
SD:XB01B04ABR,CIN=CL=4.7uF(Ceram ic)
CFB=620pF(Ceram ic),RFB1=510kΩ ,RFB2=36kΩ
0
40
4.95
30
4.90
10m A
Output Current
4.85
0
Time (0.2msec/div)
Time (1.0msec/div)
VOUT=15V
VOUT=15V
VIN=VDD=VCE,L=4.7uH(CDRH4D18C)
SD:XB01B04ABR,CIN=CL=4.7uF(Ceram ic)
CFB=1000pF(Ceram ic),RFB1=300kΩ ,RFB2=75kΩ
15.00
40
14.95
30
14.90
10m A
Output Current
20
10
100uA
14.80
0
Time (0.5msec/div)
OU T (V)
(mA)
15.10
60
15.05
Output Voltage
50
15.00
40
14.95
30
14.90
20
10m A
Output Current
14.85
10
100uA
14.80
(mA)
60
Output Voltage
20
10
100uA
4.80
50
14.85
5.00
VIN=VDD=VCE,L=4.7uH(CDRH4D18C)
SD:XB01B04ABR,CIN=CL=4.7uF(Ceram ic)
CFB=1000pF(Ceram ic),RFB1=300kΩ ,RFB2=75kΩ
15.05
50
OU T
10
100uA
OU T
OUT
(V)
15.10
20
Output Voltage: V
4.85
Output Current
10m A
Output Voltage
Output Current: I
4.90
5.05
(mA)
30
60
OUT
OU T
4.95
OU T (V)
40
Output Voltage: V
(mA)
5.00
Output Voltage
Output Current: I
50
5.05
4.80
Output Voltage: V
5.10
Output Current: I
60
Output Current: I
Output Voltage: V
OUT
(V)
5.10
VIN=VDD=VCE=3.6V,L :CDRH4D18C
SD:XB01B04ABR,CIN=CL=4.7uF(Ceram ic)
CFB=620pF(Ceram ic),RFB1=510kΩ ,RFB2=36kΩ
0
Time (2.0msec/div)
13/18
XC9119D10A Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(17) Maximum Output Current vs. Input Voltage
VOUT=5V
SD:XB01B04ABR,L=22uH(CDRH4D18C)
VCE=VDD,CIN=4.7uF(Ceram ic)CL=10uF(Ceram ic)
CFB=620pF(Ceram ic),RFB1=510kΩ ,RFB2=36kΩ
160
140
o
T a=25 C
120
6V
100
3.6V
80
60
V DD=2.5V
40
20
0
1
2
3
4
Input Voltage VIN(V)
14/18
5
6
Maximum Output Current: IOU T_M AX(mA)
Maximum Output Current:I
OU T_M AX(mA)
VOUT=15V
500
SD:XB01B04ABR,L=4.7uH(CDRH4D18C)
VCE=VDD,CIN=4.7uF(Ceram ic)CL=10uF(Ceram ic)
CFB=1000pF(Ceram ic),RFB1=300kΩ ,RFB2=75kΩ
T a=25 o C
400
6V
300
3.6V
200
100
V DD=2.5V
0
1
2
3
4
5
Input Voltage VIN(V)
6
XC9119D10A
Series
■PACKAGING INFORMATION
●SOT-25
●USP-6C
15/18
XC9119D10A Series
■REFERENCE PATTERN LAYOUT DIMENSIONS
●USP-6C
16/18
Note: Recommended metal mask design
XC9119D10A
Series
■MARKING RULE
●SOT-25
① Represents product series
MARK
PRODUCT SERIES
L
XC9119xxxxMx
② Represents Lx overvoltage limit
SOT-25
(TOP VIEW)
MARK
Lx OVERVOLTAGE LIMIT
PRODUCT SERIES
D
Not Available
XC9119DxxxMx
③ Represents oscillation frequency
MARK
OSCILLATION FREQUENCY
PRODUCT SERIES
A
1MHz
XC9119xxxAMx
④ Represents production lot number
0 to 9 and A to Z, or inverted characters 0 to 9 and A to Z repeated.
(G, I, J, O, Q, W excepted)
●USP-6C
① Represents product series
MARK
PRODUCT SERIES
V
XC9119xxxxDx
② Represents Lx overvoltage limit
USP-6C
(TOP VIEW)
MARK
Lx OVERVOLTAGE LIMIT
PRODUCT SERIES
D
Not Available
XC9119DxxxDx
FB VOLTAGE (V)
PRODUCT SERIES
1.0
XC9119x10xDx
MARK
OSCILLATION FREQUENCY
PRODUCT SERIES
A
1MHz
XC9119xxxADx
③④ Represents FB voltage
MARK
③
④
1
0
⑤ Represents oscillation frequency
⑥ Represents production lot number
0 to 9 and A to Z repeated (G, I, J, O, Q, W excepted)
* No character inversion used.
17/18
XC9119D10A Series
1. The products and product specifications contained herein are subject to change without
notice to improve performance characteristics.
Consult us, or our representatives
before use, to confirm that the information in this catalog is up to date.
2. We assume no responsibility for any infringement of patents, patent rights, or other
rights arising from the use of any information and circuitry in this catalog.
3. Please ensure suitable shipping controls (including fail-safe designs and aging
protection) are in force for equipment employing products listed in this catalog.
4. The products in this catalog are not developed, designed, or approved for use with such
equipment whose failure of malfunction can be reasonably expected to directly
endanger the life of, or cause significant injury to, the user.
(e.g. Atomic energy; aerospace; transport; combustion and associated safety
equipment thereof.)
5. Please use the products listed in this catalog within the specified ranges.
Should you wish to use the products under conditions exceeding the specifications,
please consult us or our representatives.
6. We assume no responsibility for damage or loss due to abnormal use.
7. All rights reserved. No part of this catalog may be copied or reproduced without the
prior permission of Torex Semiconductor Ltd.
18/18