11.0-17.0 GHz GaAs MMIC Receiver R1007-BD October 2008 - Rev 13-Oct-08 Features Fully Integrated Design 2.2 dB Noise Figure 13.5 dB Conversion Gain 20 dB Image Rejection +4 dBm IIP3 +3 dBm LO drive Level 100% On-Wafer RF, DC and Noise Figure Testing 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010 Chip Device Layout General Description Mimix Broadband’s 11.0-17.0 GHz GaAs MMIC receiver has a noise figure of 2.2 dB and 20.0 dB image rejection across the band. This device is a three stage LNA followed by an image reject resistive pHEMT mixer and includes an integrated LO buffer amplifer. The image reject mixer eliminates the need for a bandpass filter after the LNA to remove thermal noise at the image frequency. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id1), (Id3) Gate Bias Voltage (Vg) Input Power (RF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 250, 200 mA +0.3 VDC +17 dBm -65 to +165 OC -55 to MTTF Table3 MTTF Table 3 (3) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = 25o C) Parameter Frequency Range (RF) Frequency Range (LO) Frequency Range (IF) Input Return Loss RF (S11) Small Signal Conversion Gain RF/IF (S21)2 LO Input Drive (PLO) Image Rejection2 Noise Figure (NF)2 Isolation LO/RF Input Third Order Intercept (IIP3) 1 Drain Bias Voltage (Vd1) Drain Bias Voltage (Vd3) Gate Bias Voltage (Vg1,2) Gate Bias Voltage (Vg3) Gate Bias Voltage (Vg4) Mixer, Doubler Supply Current (Id1) (Vd1=3.0, Vg=-0.3V Typical) Supply Current (Id3) (Vd3=5.0V,Vg=-0.1V Typical) Units GHz GHz GHz dB dB dBm dBc dB dB dBm VDC VDC VDC VDC VDC mA mA Min. 11.0 9.0 DC 10.0 15.0 -1.2 -1.2 -1.2 - Typ. 2.0 15.0 13.5 +3.0 20.0 2.2 40.0/40.0 +4.0 +4.0 +4.0 -0.3 -0.1 -0.5 80 100 Max. 17.0 19.0 TBD 3.0 +5.0 +5.0 +0.1 +0.1 +0.1 120 150 (1) Measured using constant current. (2) Guaranteed specifications from 12 to 15 GHz. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 8 Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 11.0-17.0 GHz GaAs MMIC Receiver R1007-BD October 2008 - Rev 13-Oct-08 Receiver Measurements 14REC0607, LSB Conv. Gain (dB) and Im. Rej (dBc) 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 Conv Gain, USB Image Rej, USB CG (dB) & IR (dBc) CG (dB) & IR (dBc) 14REC0607, USB Conv. Gain (dB) and Im. Rej (dBc) 8 9 10 11 12 13 14 15 16 17 18 19 20 21 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 22 Conv Gain, LSB Image Rej, LSB 8 9 10 11 12 13 14 RF (GHz) 15 16 17 18 19 20 21 22 RF (GHz) 14REC0607 Third Order Intermod Performance, PLO = +6dBm 14REC0607 Noise Figure (dB) 24 10.0 22 USB 9.0 LSB 20 8.0 18 OIP3 & IIP3 (dBm) Noise Figure (dB) 7.0 6.0 5.0 4.0 3.0 16 14 12 10 8 6 2.0 IIP3, LSB IIP3, USB OIP3, LSB OIP3, USB 4 2 1.0 0 0.0 11 10 11 12 13 14 15 16 17 18 19 12 13 14 20 16 17 18 19 USB, PRF= - 20 dBm, PLO = 0, 3 & 6 dBm, VG4 = - 0.6 V, 5 RC, 08 AUG 2005: OIP3 avg (dBm) vs. RF (GHz) LSB, PRF= - 20 dBm, PLO = 0, 3 & 6 dBm, VG4 = - 0.6 V, 5 RC, 08 AUG 2005: OIP3 avg (dBm) vs. RF (GHz) 25 25 OIP3, PLO (dBm)=0, RC=R10C4 OIP3, PLO (dBm)=0, RC=R10C6 OIP3, PLO (dBm)=0, RC=R11C6 OIP3, PLO (dBm)=0, RC=R12C4 OIP3, PLO (dBm)=0, RC=R13C7 15 OIP3, PLO (dBm)=3, RC=R10C4 OIP3, PLO (dBm)=3, RC=R10C6 OIP3, PLO (dBm)=3, RC=R11C6 OIP3, PLO (dBm)=3, RC=R12C4 OIP3, PLO (dBm)=3, RC=R13C7 10 OIP3, PLO (dBm)=6, RC=R10C4 OIP3, PLO (dBm)=6, RC=R10C6 OIP3, PLO (dBm)=6, RC=R11C6 5 OIP3, PLO (dBm)=6, RC=R12C4 OIP3, PLO (dBm)=6, RC=R13C7 OIP3, PLO (dBm)=0, RC=R10C4 OIP3, PLO (dBm)=0, RC=R10C6 20 OIP3 avg (dBm) 20 OIP3 avg (dBm) 15 RF (GHz) RF (GHz) OIP3, PLO (dBm)=0, RC=R11C6 OIP3, PLO (dBm)=0, RC=R12C4 OIP3, PLO (dBm)=0, RC=R13C7 15 OIP3, PLO (dBm)=3, RC=R10C4 OIP3, PLO (dBm)=3, RC=R10C6 OIP3, PLO (dBm)=3, RC=R11C6 OIP3, PLO (dBm)=3, RC=R12C4 OIP3, PLO (dBm)=3, RC=R13C7 10 OIP3, PLO (dBm)=6, RC=R10C4 OIP3, PLO (dBm)=6, RC=R10C6 OIP3, PLO (dBm)=6, RC=R11C6 5 OIP3, PLO (dBm)=6, RC=R12C4 OIP3, PLO (dBm)=6, RC=R13C7 0 0 11 12 13 14 15 RF (GHz) 16 17 18 19 11 12 13 14 15 16 17 18 19 RF (GHz) Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 2 of 8 Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 11.0-17.0 GHz GaAs MMIC Receiver R1007-BD October 2008 - Rev 13-Oct-08 Receiver Measurements (cont.) USB, PRF= - 20 dBm, PLO = 0, 3 & 6 dBm, VG4 = - 0.6 V, 5 RC, 08 AUG 2005: IIP3 avg (dBm) vs. RF (GHz) LSB, PRF= - 20 dBm, PLO = 0, 3 & 6 dBm, VG4 = - 0.6 V, 5 RC, 08 AUG 2005: IIP3 avg (dBm) vs. RF (GHz) 14 14 13 13 12 12 IIP3, PLO (dBm)=0, RC=R10C4 IIP3, PLO (dBm)=0, RC=R10C6 IIP3 avg (dBm) 10 IIP3, PLO (dBm)=0, RC=R11C6 IIP3, PLO (dBm)=0, RC=R12C4 IIP3, PLO (dBm)=0, RC=R13C7 9 8 IIP3, PLO (dBm)=3, RC=R10C4 IIP3, PLO (dBm)=3, RC=R10C6 IIP3, PLO (dBm)=3, RC=R11C6 7 6 IIP3, PLO (dBm)=3, RC=R12C4 IIP3, PLO (dBm)=3, RC=R13C7 5 4 IIP3, PLO (dBm)=6, RC=R10C4 IIP3, PLO (dBm)=6, RC=R10C6 IIP3, PLO (dBm)=6, RC=R11C6 3 2 IIP3, PLO (dBm)=6, RC=R12C4 IIP3, PLO (dBm)=6, RC=R13C7 1 0 IIP3, PLO (dBm)=0, RC=R10C4 IIP3, PLO (dBm)=0, RC=R10C6 11 10 IIP3 avg (dBm) 11 IIP3, PLO (dBm)=0, RC=R11C6 IIP3, PLO (dBm)=0, RC=R12C4 IIP3, PLO (dBm)=0, RC=R13C7 9 8 IIP3, PLO (dBm)=3, RC=R10C4 IIP3, PLO (dBm)=3, RC=R10C6 IIP3, PLO (dBm)=3, RC=R11C6 7 6 IIP3, PLO (dBm)=3, RC=R12C4 IIP3, PLO (dBm)=3, RC=R13C7 5 4 IIP3, PLO (dBm)=6, RC=R10C4 IIP3, PLO (dBm)=6, RC=R10C6 IIP3, PLO (dBm)=6, RC=R11C6 3 2 IIP3, PLO (dBm)=6, RC=R12C4 IIP3, PLO (dBm)=6, RC=R13C7 1 0 -1 -1 -2 -2 11 12 13 14 15 RF (GHz) 16 17 18 19 11 12 13 14 15 16 17 18 19 RF (GHz) Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 3 of 8 Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 11.0-17.0 GHz GaAs MMIC Receiver R1007-BD October 2008 - Rev 13-Oct-08 Mechanical Drawing 0.881 (0.035) 1.681 (0.066) 2.081 (0.082) 2 3 4 2.000 (0.079) 1.615 (0.064) 10 9 8 0.481 (0.019) 0.881 (0.035) 1.681 (0.066) 0.0 0.0 1.625 (0.064) 5 1 7 6 2.281 2.081 (0.082) (0.090) 2.700 (0.106) (Note: Engineering designator is 14REC0607) Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold All DC/IF Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008) Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 3.97 mg. Bond Pad #1 (RF) Bond Pad #2 (Vd1) Bond Pad #3 (IF1) Bond Pad #4 (Vd3) Bond Pad #5 (LO) Bond Pad #6 (Vg3) Bias Arrangement Bond Pad #7 (Vg4) Bond Pad #8 (IF2) Bond Pad #9 (Vg2) Bond Pad #10 (Vg1) Bypass Capacitors - See App Note [2] Vd1 Vd3 IF1 2 RF 3 4 5 1 LO XR1007 10 Vg1,2 9 8 7 6 IF2 Vg3 Vg4 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 4 of 8 Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 11.0-17.0 GHz GaAs MMIC Receiver R1007-BD October 2008 - Rev 13-Oct-08 App Note [1] Biasing - As shown in the bonding diagram, this device is operated by separately biasing Vd1=4.0V with Id1=80mA and Vd3=4.0V with Id3=100mA. Additionally, a mixer bias is also required with Vg4=-0.5V. Adjusting Vg4 above or below this value can adversely affect conversion gain, image rejection and intercept point performance. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.3V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. App Note [2] Bias Arrangement For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if gate or drains are tied together) of DC bias pads. For Individual Stage Bias -- Each DC pad (Vd1,3 and Vg1,2,3,4) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended. MTTF XR1007, MTTF (yrs) vs. Backplate Temperature (°C) 1.0E+06 MTTF (years) 1.0E+05 1.0E+04 1.0E+03 1.0E+02 1.0E+01 1.0E+00 55 65 75 85 95 Temperature (°C) MTTF is calculated from accelerated life-time data of single devices and assumes isothermal back-plate. Bias Conditions: Vd1=4.0V, Id1=80mA, Vd3=4.0V, Id3=100 mA Typical Application BPF XR1007-BD IF Out 2 GHz Coupler RF IN 11.0-17.0 GHz LNA IR Mixer AGC Control Buffer LO(+3.0dBm) 9.0-15.0 GHz (USB Operation) 13.0-19.0 GHz (LSB Operation) Mimix Broadband MMIC-based 11.0-17.0 GHz Receiver Block Diagram Mimix Broadband's 11.0-17.0 GHz GaAs MMIC Receiver can be used in saturated radio applications and linear modulation schemes up to 128 QAM. The receiver can be used in upper and lower sideband applications from 11.0-17.0 GHz. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 5 of 8 Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 11.0-17.0 GHz GaAs MMIC Receiver R1007-BD October 2008 - Rev 13-Oct-08 App Note [3] USB/LSB Selection - LSB USB IF2 For Upper Side Band operation (USB): With IF1 and IF2 connected to the direct port (0º) and coupled port (90º) respectively as shown in the diagram, the USB signal will reside on the isolated port. The input port must be loaded with 50 ohms. For Lower Side Band operation (LSB): With IF1 and IF2 connected to the direct port (0º) and coupled port (90º) respectively as shown in the diagram, the LSB signal will reside on the input port. The isolated port must be loaded with 50 ohms. IF1 An alternate method of Selection of USB or LSB: LSB USB In Phas e Combiner -90 In Phas e Combiner -90 o o IF2 IF1 IF2 IF1 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 6 of 8 Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 11.0-17.0 GHz GaAs MMIC Receiver R1007-BD October 2008 - Rev 13-Oct-08 Block Diagram and Schematics Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 7 of 8 Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 11.0-17.0 GHz GaAs MMIC Receiver R1007-BD October 2008 - Rev 13-Oct-08 Handling and Assembly Information CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not ingest. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. For additional information please see the Mimix "Epoxy Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.0012 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280º C (Note: Gold Germanium should be avoided). The work station temperature should be 310ºC +/- 10º C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. Ordering Information XR1007-BD-000X XR1007-BD-EV1 Where “X” is RoHS compliant die packed in “V” – vacuum released gel paks or “W” – waffle trays XR1007-BD evaluation module Caution: ESD Sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Proper ESD procedures should be followed when handling this device. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 8 of 8 Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.