10.0-18.0 GHz GaAs Receiver QFN, 7x7 mm R1007-QD August 2007 - Rev 12-Aug-07 Features Integrated LNA, LO Buffer, Image Reject Mixer 7x7 mm, QFN +2.0 dBm LO Drive Level 2.7 dB Noise Figure 20.0 dB Image Rejection 100% RF, DC and Noise Figure Testing General Description Mimix Broadband’s 10.0-18.0 GHz GaAs packaged receiver has a noise figure of 2.7 dB and 20.0 dB image rejection across the band. This device is a two stage balanced LNA followed by an image reject sub-harmonic anti-parallel diode mixer and includes an integrated LO buffer amplifer. The image reject mixer eliminates the need for a bandpass filter after the LNA to remove thermal noise at the image frequency. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This device uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The device comes in a 7x7 mm QFN Surface Mount Laminate Package offering excellent RF and thermal properties and is RoHS compliant. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id1,Id2) Gate Bias Voltage (Vg) Input Power (RF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +5.0 VDC 200, 250 mA +0.3 VDC +17 dBm -65 to +165 OC -55 to MTTF Table 3 MTTF Table 3 (3) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = 25o C) Parameter Frequency Range (RF) Upper Side Band Frequency Range (LO) Frequency Range (IF) Input Return Loss RF (S11) Small Signal Conversion Gain RF/IF (S21)2 LO Input Drive (PLO) Image Rejection2 Noise Figure (NF)2 Isolation LO/RF @ LOx1/LOx2 Input Third Order Intercept (IIP3)1,2 Drain Bias Voltage (Vd1) Drain Bias Voltage (Vd2) Gate Bias Voltage (Vg1,2) Supply Current (Id1) (Vd1=4.0V, Vg=-0.3V Typical) Supply Current (Id2) (Vd2=4.0V,Vg=-0.3V Typical) Units GHz GHz GHz dB dB dBm dBc dB dB dBm VDC VDC VDC mA mA Min. 10.0 8.0 DC -1.2 - Typ. 15.0 15.0 +2.0 20.0 2.7 40.0 +4.0 +4.0 +4.0 -0.3 80 100 Max. 18.0 20.0 4.0 +4.5 +4.5 +0.1 120 150 (1) Measured using constant current. (2) Measured using LO Input drive level of +2.0 dBm. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 6 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 10.0-18.0 GHz GaAs Receiver QFN, 7x7 mm R1007-QD August 2007 - Rev 12-Aug-07 Receiver Measurements XR1007-QD, Image Rejection (dBc) XR1007-QD, Conversion Gain (dB) 20 0 18 USB LSB -5 14 12 10 8 6 USB LSB 4 2 Image Rejection (dBc) Conversion Gain (dB) 16 -10 -15 -20 -25 -30 -35 -40 0 10 11 12 13 14 15 RF (GHz) [IF=2GHz] 16 17 10 18 11 XR1007-QD, Input P1dB (dBm) 13 14 15 RF (GHz) [IF=2GHz] 16 17 18 XR1007-QD, Noise Figure (dB) 5.0 0 4.5 USB LSB -1 -2 4.0 -3 3.5 -4 3.0 NF (dB) Input P1dB (dBm) 12 -5 -6 2.5 2.0 -7 1.5 -8 1.0 -9 0.5 USB LSB 0.0 -10 10 11 12 13 14 15 RF (GHz) [IF=2GHz] 16 17 18 10 11 12 13 14 15 16 17 18 RF (GHz) [IF=2GHz] Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 2 of 6 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 10.0-18.0 GHz GaAs Receiver QFN, 7x7 mm R1007-QD August 2007 - Rev 12-Aug-07 Physical Dimensions Recommended Layout (Note: Engineering designator is 14REC0742) LO IN IF1 Out IF2 Out VG4 VD1 44 43 42 41 40 39 VG1&2 IF2_OUT VG3 10 nF VG4 VD3 VG3 Functional Diagram 38 37 36 35 34 1 33 2 32 3 31 4 30 10 nF VG1&2 RF IN Ground LO input Ground LO Buffer Drain Bias IF1 Output LNA Drain Bias Ground RF input Ground LNA Gate Bias IF2 output Mixer Gate Bias LO Buffer Gate Bias Nominal Value Unit GND 5 Image Reject Mixer LO Buffer 29 GND 28 RF IN GND LNA +2.0 dBm LO IN 6 4.0 V GND 7 27 4.0 V 8 26 9 25 10 24 -0.3 V -0.5 -0.1 V V LNA XR1007-QD 11 12 13 14 15 16 17 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com 18 19 20 21 23 22 VD1 Pin Function IF1_OUT Pin Pin Name Number 5 GND 6 LO in 7 GND 15 VD3 17 IF1 19 VD1 27 GND 28 RF In 29 GND 36 VG1, 2 39 IF2 41 VG4 43 VG3 All other pins N/C VD3 Pin Designations Page 3 of 6 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 10.0-18.0 GHz GaAs Receiver QFN, 7x7 mm R1007-QD August 2007 - Rev 12-Aug-07 App Note [1] Biasing - The device is operated by separately biasing Vd1 and Vd2 with Vd1=4.0V, Id1=80mA and Vd2=4.0V, Id2=100mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.3V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. MTTF XR1007-QD, MTTF (yrs) vs. Backplate Temperature (°C) 1.0E+06 MTTF (years) 1.0E+05 1.0E+04 1.0E+03 1.0E+02 1.0E+01 1.0E+00 55 65 75 85 95 Temperature (°C) MTTF is calculated from accelerated life-time data of single devices and assumes an isothermal back-plate. Typical Application XR1007-QD BPF RF IN 10.0-18.0 GHz LNA IR Mixer IF Out 2 GHz Coupler AGC Control LO(+2.0dBm) 8.0-16.0 GHz (USB Operation) 12.0-20.0 GHz (LSB Operation) Mimix Broadband MMIC-based 10.0-18.0 GHz Receiver Block Diagram Mimix Broadband's 10.0-18.0 GHz XR1007-QD GaAs Receiver can be used in saturated radio applications and linear modulation schemes up to 256 QAM. The receiver can be used in upper and lower sideband applications from 10.0-18.0 GHz. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 4 of 6 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 10.0-18.0 GHz GaAs Receiver QFN, 7x7 mm R1007-QD August 2007 - Rev 12-Aug-07 App Note [3] USB/LSB Selection - LSB USB IF2 For Upper Side Band operation (USB): With IF1 and IF2 connected to the direct port (0º) and coupled port (90º) respectively as shown in the diagram, the USB signal will reside on the isolated port. The input port must be loaded with 50 ohms. For Lower Side Band operation (LSB): With IF1 and IF2 connected to the direct port (0º) and coupled port (90º) respectively as shown in the diagram, the LSB signal will reside on the input port. The isolated port must be loaded with 50 ohms. IF1 An alternate method of Selection of USB or LSB: -90 USB LSB In Phase Combiner In Phase Combiner -90o o IF2 IF1 IF2 IF1 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 5 of 6 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 10.0-18.0 GHz GaAs Receiver QFN, 7x7 mm R1007-QD August 2007 - Rev 12-Aug-07 CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not ingest. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Package Attachment - This packaged product from Mimix Broadband is provided as a rugged surface mount package compatible with high volume solder installation. The package is a low-cost plastic package. Vacuum tools or other suitable pick and place equipment may be used to pick and place this part. Care should be taken to ensure that there are no voids or gaps in the solder connection so that good RF, DC and ground connections are maintained. Voids or gaps can eventually lead not only to RF performance degradation, but reduced reliability and life of the product due to thermal stress. Reflow Profile Ramp Up Rate Activation Time and Temperature Time Above Melting Point Max Peak Temperature Time Within 5 ºC of Peak Ramp Down Rate SnPb 3-4 ºC/sec 60-120 sec @ 140-160 ºC 60-150 sec 240 ºC 10-20 sec 4-6 ºC/sec Pb Free 3-4 ºC/sec 60-180 sec @ 170-200 ºC 60-150 sec 265 ºC 10-20 sec 4-6 ºC/sec Mimix Lead-Free RoHS Compliant Program - Mimix has an active program in place to meet customer and governmental requirements for eliminating lead (Pb) and other environmentally hazardous materials from our products. All Mimix RoHS compliant components are form, fit and functional replacements for their non-RoHS equivalents. Lead plating of our RoHS compliant parts is 100% matte tin (Sn) over copper alloy and is backwards compatible with current standard SnPb low-temperature reflow processes as well as higher temperature (260°C reflow) “Pb Free” processes. Part Number for Ordering XR1007-QD-0N00 XR1007-QD-0N0T XR1007-QD-EV1 Description Ni/Au plated RoHS compliant QFN 7x7 44L surface mount package in bulk quantity Ni/Au plated RoHS compliant QFN 7x7 44L surface mount package in tape and reel XR1007-QD Evaluation Module We also offer this part with alternative plating options. Please contact your regional sales manager for more information regarding different plating types. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 6 of 6 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.