ETC ZC821B

SILICON ION-IMPLANTED
HYPERABRUPT TUNER DIODES
ZC820
SERIES
ZC820
SERIES
ISSUE 2 – MARCH 94
DIODE PIN CONNECTION
1
200
1
CATHODE
2
2
ANODE
E-Line
TO92 Compatible
Diode Capacitance (pF)
100
ABSOLUTE MAXIMUM RATINGS.
826
825
10
824
823
822
821
820
10
Reverse Voltage (Volts)
Diode Capacitance
SYMBOL
MAX
UNIT
Reverse Voltage
VR
25
V
Forward Current
IF
200
mA
Power Dissipation at Tamb=25°C
Ptot
300
mW
Junction Temperature
Tj
125
°C
Storage Temperature Range
Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb =25°C)
1
1
PARAMETER
100
PARAMETER
SYMBOL MIN
Reverse Voltage Leakage
IR
Temperature Coefficient
of Capacitance
η
TYP
0.03
MAX
UNIT CONDITIONS
0.02
µA
0.04
%/°C
VR=3V
TUNING CHARACTERISTICS (at Tamb =25°C)
PART
NO
Nominal Capacitance
in pF
@ VR=2V, f=1MHz
Minimum
Q
@ VR=3V
f=50MHz
MIN
NOM
MAX
8
10
12
ZC821
12
15
18
300
5
6.5
ZC822
17.6
22
26.4
200
5
6.5
ZC823
26.4
33
39.6
200
5
6.5
ZC824
37.6
47
56.4
200
5
6.5
ZC825
54.4
68
81.6
100
5
6.5
ZC826
80
100
120
100
5
6.5
ZC820
300
*Available with 2V nominal capacitance ±10 suffix A, ± 5% suffix B
3-108
Capacitance Ratio
C2 /C20,
at f=1MHz
3-107
MIN
MAX
5
6.5
SILICON ION-IMPLANTED
HYPERABRUPT TUNER DIODES
ZC820
SERIES
ZC820
SERIES
ISSUE 2 – MARCH 94
DIODE PIN CONNECTION
1
200
1
CATHODE
2
2
ANODE
E-Line
TO92 Compatible
Diode Capacitance (pF)
100
ABSOLUTE MAXIMUM RATINGS.
826
825
10
824
823
822
821
820
10
Reverse Voltage (Volts)
Diode Capacitance
SYMBOL
MAX
UNIT
Reverse Voltage
VR
25
V
Forward Current
IF
200
mA
Power Dissipation at Tamb=25°C
Ptot
300
mW
Junction Temperature
Tj
125
°C
Storage Temperature Range
Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb =25°C)
1
1
PARAMETER
100
PARAMETER
SYMBOL MIN
Reverse Voltage Leakage
IR
Temperature Coefficient
of Capacitance
η
TYP
0.03
MAX
UNIT CONDITIONS
0.02
µA
0.04
%/°C
VR=3V
TUNING CHARACTERISTICS (at Tamb =25°C)
PART
NO
Nominal Capacitance
in pF
@ VR=2V, f=1MHz
Minimum
Q
@ VR=3V
f=50MHz
MIN
NOM
MAX
8
10
12
ZC821
12
15
18
300
5
6.5
ZC822
17.6
22
26.4
200
5
6.5
ZC823
26.4
33
39.6
200
5
6.5
ZC824
37.6
47
56.4
200
5
6.5
ZC825
54.4
68
81.6
100
5
6.5
ZC826
80
100
120
100
5
6.5
ZC820
300
*Available with 2V nominal capacitance ±10 suffix A, ± 5% suffix B
3-108
Capacitance Ratio
C2 /C20,
at f=1MHz
3-107
MIN
MAX
5
6.5