DIODES ZDT6702TA

SM-8 COMPLEMENTARY MEDIUM POWER
DARLINGTON TRANSISTORS
ZDT6702
ISSUE 2 – February 1997
C1
B1
C1
E1
C2
B2
C2
E2
NPN
PNP
SM-8
(8 LEAD SOT223)
PARTMARKING DETAIL – T6702
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
NPN
PNP
UNIT
Collector-Base Voltage
VCBO
80
-80
V
Collector-Emitter Voltage
VCEO
60
-60
V
Emitter-Base Voltage
VEBO
10
-10
V
Peak Pulse Current
ICM
4
-4
A
1.75
-1.75
Continuous Collector Current
IC
Operating and Storage Temperature
Range
Tj:Tstg
-55 to +150
A
°C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Total Power Dissipation at Tamb = 25°C*
Any single die “on”
Both die “on” equally
Ptot
Derate above 25°C*
Any single die “on”
Both die “on” equally
Thermal Resistance - Junction to Ambient*
Any single die “on”
Both die “on” equally
VALUE
UNIT
2.25
2.75
W
W
18
22
mW/ °C
mW/ °C
55.6
45.5
°C/ W
°C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
ZDT6702
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
80
200
V
IC=100µ A
Collector-Emitter
Breakdown Voltage
V(BR)CEO
60
100
V
IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
10
15
V
IE=100µ A
Collector Cutoff
Current
ICBO
0.5
10
10
µA
nA
VCB=60V
VCB=60V,T amb =100°C
Emitter Cutoff Current IEBO
0.1
10
nA
VEB=8V
Colllector-Emitter
Cutoff Current
ICES
50
500
nA
VCE =60V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.83
1.0
0.95
1.28
V
V
IC=0.5A, I B=0.5mA*
IC=1.75A, IB=2mA*
Base-Emitter
Saturation Voltage
VBE(sat)
1.68
1.85
V
IC=1.75A, IB=2mA*
Base-Emitter
Turn-On Voltage
VBE(on)
1.55
1.75
V
IC=1.75A, VCE=5V*
Static Forward
hFE
Current Transfer Ratio
5K
5K
3.5K
0.5K
MAX.
IC=10mA, VCE=5V
IC=500mA, VCE=5V
IC=2A, VCE=5V
IC=4A, VCE=5V*
13K
13K
9K
2K
Transition Frequency
fT
140
MHz
IC=100mA, VCE=10V
f=100MHz
Input Capacitance
Cibo
70
pF
VEB=500mV, f=1MHz
Output Capacitance
Cobo
15
pF
VCB=10V, f=1MHz
Switching Times
ton
0.5
µs
toff
2.1
µs
IC=500mA, VCE=10V
IB1=IB2=0.5mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ZDT6702
PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
-80
-120
V
IC=-100µ A
Collector-Emitter
Breakdown Voltage
VCEO(SUS)
-60
-90
V
IC=-10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
-10
-15
V
IE=-100µ A
Collector Cutoff
Current
ICBO
-0.5
-10
-10
µA
nA
VCB=-60V
VCB=-60V, Tamb=100°C
Emitter Cutoff Current IEBO
-0.1
-10
nA
VEB=-8V
Collector-Emitter
Cutoff Current
ICES
-50
-500
nA
VCE =-60V
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.86
-1.05
-1.0
-1.28
V
V
IC=-0.5A, IB=-0.5mA*
IC=-1.75A, IB=-2mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-1.7
-1.9
V
IC=-1.75A, IB=-2mA*
Base-Emitter Turn-On
Voltage
VBE(on)
-1.55
-1.85
V
IC=-1.75A, VCE=-5V*
Static Forward
hFE
Current Transfer Ratio
2K
2K
1.5K
1K
MAX.
IC=-10mA, VCE=-5V*
IC=-500mA, VCE=-5V*
IC=-2A, VCE=-5V*
IC=-4A, VCE=-5V*
8K
8K
7K
4K
Transition Frequency
fT
140
MHz
IC=-100mA, VCE=-10V
f=100MHz
Input Capacitance
Cibo
90
pF
VEB=-0.5V, f=1MHz
Output Capacitance
Cobo
25
pF
VCE=-10V, f=1MHz
Switching Times
ton
0.75
µs
toff
1.2
µs
IC=-0.5A, VCE=-10V
IB1=IB2=-0.5mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ZDT6702
TYPICAL CHARACTERISTICS (NPN TRANSISTOR)
1.2
+25°C
1.0
0.8
0.8
IC/IB=1000
IC/IB=500
0.6
0.6
0.4
0.4
0.2
0.2
0
1m
10m
100m
1
10
1m
IC - Collector Current (A)
VCE(sat) v IC
20K
+85°C
+25°C
-55°C
1.2
8K
0.8
4K
0.4
10m
100m
1
IC - Collector Current (A)
10
0
1m
hFE v IC
2.0
10m
100m
1
10
IC/IB=1000
1.6
12K
1m
-55°C
+25°C
+85°C
+150°C
IC - Collector Current (A)
VCE(sat) v IC
2.0
VCE=5V
16K
0
IC/IB=1000
1.0
-55°C
+25°C
+85°C
+150°C
10m
100m
1
IC - Collector Current (A)
VBE(sat) v IC
10
10
VCE=5V
1.6
1
1.2
0.8
-55°C
+25°C
+85°C
+150°C
0.4
0
1m
10m
100m
1
IC - Collector Current (A)
VBE(on) v IC
100m
10
10m
100m
DC
1s
100ms
10ms
1ms
100us
1
10
VCE - Collector Emitter Voltage (V)
Safe Operating Area
100
ZDT6702
TYPICAL CHARACTERISTICS (PNP TRANSISTOR)
1.2
+25°C
1.0
0.8
0.8
IC/IB=1000
IC/IB=500
0.6
0.6
0.4
0.4
0.2
0.2
0
IC/IB=1000
1.0
1m
20k
10m
100m
1
IC - Collector Current (A)
VCE(sat) v IC
10
0
1m
2.0
VCE=5V
+85°C
+25°C
-55°C
15k
-55°C
+25°C
+85° C
+150° C
10m
100m
1
IC - Collector Current (A)
VCE(sat) v IC
IC/IB=1000
1.6
1.2
10k
0.8
5k
0
10
-55° C
+25°C
+85°C
+150°C
0.4
1m
10m
100m
1
IC - Collector Current (A)
10
0
1m
hFE v IC
2.0
10m
100m
1
IC - Collector Current (A)
VBE(sat) v IC
10
10
VCE=5V
1.6
1
1.2
-55° C
+25° C
+85° C
+150° C
0.8
100m
0.4
0
1m
10m
100m
1
IC - Collector Current (A)
VBE(on) v IC
10
10m
100m
DC
1s
100ms
10ms
1ms
100us
1
10
VCE - Collector Emitter Voltage (V)
Safe Operating Area
100
ZDT6702
OTHER CHARACTERISTICS
4
D= 1
50
D= t1
tP
t1
40
3
tP
30
2
20
D= 0.5
D= 0.2
D= 0.1
D= 0.05
Single Pulse
10
0
100us 1ms
10ms 100ms
1s
Pulse Width
10s
1
100s
0
0
20
40
2.00
2.00
1.50
1.50
1.00
Rs = 1Mohm
Rs = o/c
0.50
0
10
80
100 120 140 160
Derating curve
(single device)
Transient Thermal Resistance
(single device)
1.00
60
T - Ambient Temperature (° C)
Rs = o/c
0.50
VCE - Collector Emitter Voltage (V)
Voltage Derating
100
0
10
VCE - Collector Emitter Voltage (V)
Voltage Derating
100
ZDT6702
He
A
E
8
e1
1
2
7
D
e2
3
b
6
4
5
A1
o
45°
c
Dim
3
Millimetres
Inches
Min
Typ
Max
Min
Typ
Max
A
–
–
1.7
–
–
0.067
A1
0.02
–
0.1
0.0008
–
0.004
b
–
0.7
–
–
0.028
–
Lp
c
0.24
–
0.32
0.009
–
0.013
D
6.3
–
6.7
0.248
–
0.264
E
3.3
–
3.7
0.130
–
0.145
e1
–
4.59
–
–
0.180
–
e2
–
1.53
–
–
0.060
–
0.287
He
6.7
–
7.3
0.264
–
Lp
0.9
–
–
0.035
–
–
α
–
–
15°
–
–
15°
β
–
10°
–
–
10°
–
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Zetex Inc.
47 Mall Drive, Unit 4
Commack NY 11725
USA
Telephone: (516) 543-7100
Fax: (516) 864-7630
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Hing Fong Road,
Kwai Fong, Hong Kong
Telephone:(852) 26100 611
Fax: (852) 24250 494
These are supported by
agents and distributors in
major countries world-wide
Zetex plc 1997
Internet:
http://www.zetex.com
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