DIODES ZHB6790

SM-8 BIPOLAR TRANSISTOR H-BRIDGE
ZHB6790
PRELIMINARY DATA SHEET ISSUE B JULY 1997
FEATURES
* Compact package
* Low on state losses
* Low drive requirements
* Operates up to 40V supply
* 2 Amp continuous rating
SM-8
(8 LEAD SOT223)
PARTMARKING DETAIL – ZHB6790
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
NPNs
PNPs
UNIT
Collector-Base Voltage
VCBO
50
-50
V
Collector-Emitter Voltage
VCEO
40
-40
V
Emitter-Base Voltage
VEBO
5
-5
V
Peak Pulse Current
ICM
6
-6
A
Continuous Collector Current
IC
2
-2
Operating and Storage Temperature Range Tj:Tstg
SCHEMATIC DIAGRAM
A
-55 to +150
°C
CONNECTION DIAGRAM
C3, C4
B2
Q2
Q3
E2, E3
B3
B4
4
C3,C4
C1, C2
B1
3
E1,E4
B2
2
B4
E2,E3
1
Q4
6
Q1
7
B1
8
C1,C2
5
E1, E4
B3
ZHB6790
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
Total Power Dissipation at Tamb = 25°C*
Any single transistor “on”
Q1 and Q3 “on” or Q2 and Q4 “on” equally
Ptot
1.25
2
W
W
Derate above 25°C*
Any single transistor “on”
Q1 and Q3 “on” or Q2 and Q4 “on” equally
10
16
mW/ °C
mW/ °C
Thermal Resistance - Junction to Ambient*
Any single transistor “on”
Q1 and Q3 “on” or Q2 and Q4 “on” equally
100
62.5
°C/ W
°C/ W
100
60
D=t1
t1
80
tP
tP
tP
40
60
D=0.5
D=1
D=0.2
20
D=0.1
20
tP
30
D=1
40
D=t1
t1
50
D=0.5
D=0.2
D=0.05
Single Pulse
0
100us
1ms
10ms 100ms
1s
10s
Pulse Width
100s
D=0.1
10
D=0.05
0
100us
Single Pulse
1ms
10ms 100ms
1s
Pulse Width
10s
100s
Transient Thermal Resistance
Q1 and Q3 or Q2 and Q4 "On"
Transient Thermal Resistance
Single Transistor "On"
10
2.0
1.5
Dual Transistors †
Single Transistor
1
1.0
Full Copper
Dual Transistors †
Minimum
Single Transistor
Copper
0.5
0
0.1
0
20
40
60
80
100
120
T - Temperature (°C)
Derating curve
140 160
0.1
1
Pcb Area (inches squared)
10
Pd v Pcb Area Comparison
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB
with copper equal to 2 inches square.
†"Two devices on" is the standard operating condition for the bridge. Eg. opposing NPN/PNP pairs
rurned on.
ZHB6790
PNP TRANSISTORS
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL
MIN.
TYP.
Collector-Base Breakdown
Voltage
V(BR)CBO
-50
V
IC=-100µ A
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-40
V
IC=-10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
-5
V
IE=-100µ A
Collector Cutoff Current
ICBO
-0.1
µA
VCB=-30V
Emitter Cutoff Current
IEBO
-0.1
µA
VEB=-4V
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.14
-0.25
-0.45
-0.75
V
V
V
V
IC=-100mA, IB=-0.5mA*
IC=-500mA, IB=-5mA*
IC=-1A, IB=-10mA*
IC=-2A, IB=-50mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-1.0
V
IC=-1A, IB=-10mA*
Base-Emitter
Turn-On Voltage
VBE(on)
V
IC=-1A, VCE=-2V*
Static Forward Current
Transfer Ratio
hFE
300
200
150
Transition Frequency
fT
100
Input Capacitance
Cibo
Output Capacitance
Switching Times
-0.75
MAX. UNIT
CONDITIONS.
IC=-100mA, VCE=-2V
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
MHz
IC=-50mA, VCE=-5V
f=50MHz
225
pF
VEB=-0.5V, f=1MHz
Cobo
24
pF
VCB=-10V, f=1MHz
ton
toff
35
600
ns
IC=-500mA,
IB1= -50mA
IB2=-50mA, VCC=-10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%.
ZHB6790
NPN TRANSISTORS
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL
MIN.
TYP.
Collector-Base Breakdown
Voltage
V(BR)CBO
50
V
IC=100µ A
Collector-Emitter
Breakdown Voltage
V(BR)CEO
40
V
IC=10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
5
V
IE=100µ A
Collector Cutoff Current
ICBO
0.1
µA
VCB=35V
Emitter Cutoff Current
IEBO
0.1
µA
VEB=4V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.1
0.16
0.5
0.35
V
V
V
V
IC=100mA, IB=0.5mA*
IC=500mA, IB=2.5mA*
IC=1A, IB=5mA*
IC=2A, IB=30mA*
Base-Emitter
Saturation Voltage
VBE(sat)
0.9
V
IC=1A, IB=10mA*
Base-Emitter
Turn-On Voltage
VBE(on)
V
IC=1A, VCE=2V*
Static Forward Current
Transfer Ratio
hFE
500
400
150
Transition Frequency
fT
150
Input Capacitance
Cibo
Output Capacitance
Switching Times
0.73
MAX. UNIT
CONDITIONS.
IC=100mA, VCE=2V*
IC=1A, VCE=2V*
IC=2A, VCE=2V*
MHz
IC=50mA, VCE=5V
f=50MHz
200
pF
VEB=0.5V, f=1MHz
Cobo
16
pF
VCB=10V, f=1MHz
ton
toff
33
1300
ns
IC=500mA, IB!=50mA
IB2=50mA, VCC=10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%.
PNP TRANSISTOR
TYPICAL CHARACTERISTICS
1.8
1.6
IC/IB =100
1.8
Tamb=25°C
IC/IB =40
1.6
IC/IB =10
1.2
IC/IB =100
1.2
1.0
0.8
0.8
0.6
0.6
V
V
1.0
0.4
0.2
0.4
0.2
0
0
0.01
0.1
1
0.1
1
10
IC - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
VCE=2V
1.6
750
1.2
1.0
500
0.8
0.6
1.2
1.0
0.6
V
h
0.2
IC/IB =100
0.8
250
0.4
-55°C
+25°C
+100°C
1.4
- (Volts)
- Typical Gain
1.4
0.01
10
IC - Collector Current (Amps)
+100°C
+25°C
-55°C
1.6
0.4
0.2
h
- Normalised Gain
-55°C
+25°C
+100°C
1.4
- (Volts)
- (Volts)
1.4
ZHB6790
0
0.01
1.6
0.1
10
1
0
- (Volts)
V
0.6
IC - Collector Current (Amps)
VBE(sat) v IC
-55°C
+25°C
+100°C
VCE =2V
0.8
0.4
0.2
0
1
hFE v IC
1.0
0
0.1
IC - Collector Current (Amps)
1.4
1.2
0.01
0.01
0.1
1
IC - Collector Current (Amps)
VBE(on) v IC
10
10
ZHB6790
NPN TRANSISTOR
TYPICAL CHARACTERISTICS
Tamb=25°C
IC/IB =200
IC/IB =100
0.8
0.8
- (Volts)
- (Volts)
IC/IB =10
0.6
0.4
V
V
0
0.01
0.1
1
0.01
0.1
1
10
IC - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
VCE =2V
1.6
1.2
1.0
1K
0.8
0.6
- (Volts)
1.5K
- Typical Gain
1.4
10
IC - Collector Current (Amps)
+100°C
+25°C
-55°C
1.6
IC/IB =100
1.4
1.2
1.0
0.6
V
0.4
-55°C
+25°C
+100°C
0.8
500
h
- Normalised Gain
0.6
0.2
0
h
0.2
0.4
0.2
0
0
0.01
0.1
10
1
0
1.6
1
hFE v IC
VBE(sat) v IC
-55°C
+25°C
+100°C
VCE=2V
1.0
0.8
0.6
0.4
0.2
0
0.1
IC - Collector Current (Amps)
1.2
0
0.01
IC - Collector Current (Amps)
1.4
- (Volts)
IC/IB =100
0.4
0.2
V
-55°C
+25°C
+100°C
0.01
0.1
1
IC - Collector Current (Amps)
VBE(on) v IC
10
10
ZHB6790
SAFE OPERATING AREA
10
10
1
1
100m
10m
100m
DC
1s
100ms
10ms
1ms
100µs
DC
1s
100ms
10ms
1ms
100µs
100m
1
10
VCE - Collector Emitter Voltage (V)
Safe Operating Area (Full Copper)
see note below
100
10m
100m
1
10
100
VCE - Collector Emitter Voltage (V)
Safe Operating Area (Minimum Copper)
see note below
Note: The Safe Operating Area (SOA) charts shown are a combination of the worst case secondary
breakdown characteristics for the NPN/PNP pair, and the thermal curves demonstrating the
power dissipation capability of the energised ZHB part (opposing NPN-PNP switched on) when
mounted on a 50mm x 50mm FR4 PCB. The two cases show:
i) full copper present and
ii) with minimal copper present - this being defined as an SM-8 footprint with 1.5mm tracks to
the edge of the PCB.
For example, on a 50mm x 50mm full copper PCB, the ZHB6790 will safely dissipate 2W under
DC conditions, taking note of continuous current ratings and voltage limits. Higher powers can
be tolerated for pulsed operation, while the shorter pulse widths (100µs and 1ms) being relevant
for assessment of switching conditions.
The ZHB6790 ’H’-Bridge can be modelled within SPICE using the following transistor models
configured in the standard ’H’-Bridge topology, as shown in the schematic diagram of this datasheet.
ZETEX H Bridge NPN transistors Spice model Last revision 4/7/97
.MODEL H6790N NPN IS =2.505E-12 NF =1.0058 BF =1360 IKF=1.3 VAF=35
+ISE=.24E-12 NE =1.38 NR =1.001 BR =125 IKR=1 VAR=8 ISC=.435E-12
+NC =1.213 RB =.2 RE =.043 RC =.04 CJC=54.3E-12 MJC=.475 VJC=.765
+CJE=247E-12 TF =.851E-9 TR =15.7E-9
*
*
*ZETEX H Bridge PNP transistors Spice model Last revision 4/7/97
.MODEL H6790P PNP IS=1.09684E-12 NF=1.0102 BF=650 IKF=1.7 VAF=23.5
+ISE=9.88593E-14 NE=1.47256 NR=1.00391 BR=270 IKR=0.2 VAR=30
+ISC=5.4933E-14 NC=1.07427 RB=0.055 RE=0.049 RC=0.078 CJC=96E-12
+MJC=0.495 VJC=0.67 CJE=275E-12 TF=0.75E-9 TR=10.8E-9
*
(C) 1997 ZETEX PLC
The copyright in these models and the design embodied belong to Zetex PLC (“Zetex”). They are supplied
free of charge by Zetex for the purpose of research and design and may be used or copied intact (including
this notice) for that purpose only. All other rights are reserved. The models are believed accurate but no
condition or warranty as to their merchantability or fitness for purpose is given and no liability in respect of
any use is accepted by Zetex PLC, its distributors or agents. Zetex PLC, Fields New Road, Chadderton,
ZHB6790
He
A
E
8
e1
1
2
7
D
e2
3
b
6
4
5
A1
o
45°
c
Lp
Dim
3
Millimetres
Inches
Min
Typ
Max
Min
Typ
Max
A
–
–
1.7
–
–
0.067
A1
0.02
–
0.1
0.0008
–
0.004
b
–
0.7
–
–
0.028
–
0.013
c
0.24
–
0.32
0.009
–
D
6.3
–
6.7
0.248
–
0.264
E
3.3
–
3.7
0.130
–
0.145
e1
–
4.59
–
–
0.180
–
e2
–
1.53
–
–
0.060
–
He
6.7
–
7.3
0.264
–
0.287
Lp
0.9
–
–
0.035
–
–
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Zetex Inc.
47 Mall Drive, Unit 4
Commack NY 11725
USA
Telephone: (516) 543-7100
Fax: (516) 864-7630
Zetex (Asia) Ltd.
3510 Metroplaza, Tower 2
Hing Fong Road,
Kwai Fong, Hong Kong
Telephone:(852) 26100 611
Fax: (852) 24250 494
These are supported by
agents and distributors in
major countries world-wide
Zetex plc 1997
Internet:
http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any
product or service.