ETC ZMC10D

Current Sensor
ZMC10D
FEATURES
• Package : mod. DIL-14 (12 pin)
• Double magnetic sensor chip (employing
the magnetoresistive effect of thin film permalloy) measures the magnetic field generated by an internal current-carrying
conductor
• measurable direct or alternating current IM
up to 10A
• supply voltage 12 V
• no auxiliary field HX required
• it’s possible to overload the conductor (between pin’s 8,9,10 and 11,12,13) with
300A for 10 ms at Tamb = 25 °C
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ZMC 10D
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Unit
Supply voltage
Vbr
12
V
Supply current
Ibr
20
mA
Measurable current
at DC: absolut value
at AC: peak value
Im
10
A
Operating temperature range
Tamb
-25 to +100
°C
Storage temperature range
Tstg
-25 to +125
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25 °C unless otherwise stated)
Parameter
Symbol Min. Typ. Max.
Ii-o
Input-Output-Insulation
(pin 7, 8, 9, 10, 11, 12
shorted together and pin 1,
2, 3, 4, 5, 6 shorted together)
-
-
5
Unit
nA
Test conditions
test voltage: 2000V DC
test time: 1s
Ω
Bridge resistance
Rbr
600
Temperature coefficient of
bridge resistance
Tcrbr
-
+0.3
-
%/K
Tamb = -25...+100°C
Bridge supply current (constant current source)
Ibr
-
13
-
mA
Tamb = -25...+100°C
Offset coefficient of
Voutoff1 (current supply rejection ratio)
CSRR
-
±1.5 ±2.5
Offset voltage (static, constant)
Voutoff1
-
±19
æ32
mV
Ibr =13mA and
Rbr = 0.8kΩ
Offset voltage (dynamic,
nonlinear)
Voutoff2
-
-
±2
mV
in dependence on Im and
Tamb
Temperature coefficient of
Voutoff1
Tcvoff1
-35
-
+35
µV/K
Ibr =13mA and
Rbr = 0.8kΩ
Open circuit sensitivity
(absolute Vout/Im, with offset compensation, no disturbing field allowed)
Sa
2.7
3.9
5.1
mV/A
Ibr =13mA and
Rbr = 0.8kΩ
Resistance of the conductor
R
-
0.7
-
mΩ
Operating frequency
fmax
0
-
100
kHz
800 1300
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mV/mA
Im ≤ 10A
ZMC 10D
ELECTRICAL CHARACTERISTICS (at Tamb = 25 °C unless otherwise stated)
Parameter
Symbol Min. Typ. Max.
Unit
Test conditions
Temparature coefficient
of Sa
Tcsi
-
-
-0.12
%/K
Ibr =13mA and
Rbr = 0.8kΩ
Output voltage range
Vout
-
−
<æ10
0
mV
Ibr =13mA and
Rbr = 0.8kΩ
Nonlinearity error of Sa
NLE
-
|6|
−
%
Disturbance signal
influence on disturbing
field Hd (Vout =Im*Sa +
Vouthd)
Vouthd
-
±0.5
-
mV
Im1 = 1A; Im2 = 2A
Ibr =13m; Rbr = 0.8kΩ
and Hd = 10A/m in
50mm distance to sensor
Equations of condition:
Voutoff1 [mV] = CSRR [mV/mA] * Ibr [mA]
CSRR [mV/mA] = (R34 + R12 - R24 - R13) [Ω] * 0.5 (at Im = 0)
pinning of magnetoresistive resistors:
R34 : between pin 3 and pin 4
R12 : between pin 1 and pin 2
R24 : between pin 2 and pin 4
R13 : between pin 1 and pin 3
external connections:
pin 2 shorted to pin 5
pin 1 shorted to pin 6
Circuit connections:
condition: pin4: +Ibr and pin 1,6: -Ibr
pin 7, 8, 9
pin 10, 11, 12
: +Im
: -Im
pin 2, 5: -Vout and pin 3: +Vout
pin 7, 8, 9
pin 10, 11, 12
: -Im
: + Im
pin 2, 5: +Vout and pin 3: -Vout
Devices are identified by type on the body of the device:
ZMC10D ..... ZMC10D
Ordering information:
ZMC10D.......... in boxes
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